Graphene for Electronics
Published: | Basel : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
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Persons: | |
Format: | Book / E-Book |
Language: | English |
Keywords: | quantum hall effect GB distribution low-dimensional semimetals more... |
Physical description: | 1 electronic resource (180 p.) |
Item Description: |
Creative Commons (cc), https://creativecommons.org/licenses/by/4.0/ |
ISBN: | 9783036561684 9783036561677 |
LEADER | 03358nma a2200889 u 4500 | ||
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008 | 230202 ||| eng | ||
020 | |a 9783036561684 | ||
020 | |a books978-3-0365-6167-7 | ||
020 | |a 9783036561677 | ||
100 | 1 | |a Kogan, Eugene | |
245 | 0 | 0 | |a Graphene for Electronics |h Elektronische Ressource |
260 | |a Basel |b MDPI - Multidisciplinary Digital Publishing Institute |c 2022 | ||
300 | |a 1 electronic resource (180 p.) | ||
653 | |a quantum hall effect | ||
653 | |a GB distribution | ||
653 | |a low-dimensional semimetals | ||
653 | |a inkjet printing | ||
653 | |a ion-selective field-effect transistor | ||
653 | |a tight-binding model | ||
653 | |a image-plane position | ||
653 | |a transmission-line model measurement | ||
653 | |a liquid conductor | ||
653 | |a conductive ink | ||
653 | |a Bose-Einstein condensation | ||
653 | |a first-principle | ||
653 | |a augmented plane waves | ||
653 | |a polycrystalline | ||
653 | |a electric field | ||
653 | |a n/a | ||
653 | |a printed electronics | ||
653 | |a relaxation time | ||
653 | |a angle-resolved photoemission | ||
653 | |a mechanochemistry | ||
653 | |a scattering | ||
653 | |a real-time monitoring | ||
653 | |a image-potential states | ||
653 | |a dipolar exitons | ||
653 | |a graphene solution | ||
653 | |a Klein tunneling | ||
653 | |a graphene | ||
653 | |a dephasing | ||
653 | |a Dirac fermions | ||
653 | |a borophene | ||
653 | |a nanoscroll | ||
653 | |a microfluidic channel | ||
653 | |a single-crystalline grain | ||
653 | |a band structure | ||
653 | |a superfluidity | ||
653 | |a grain boundary (GB) | ||
653 | |a Physics / bicssc | ||
653 | |a sodium ions | ||
653 | |a image potential | ||
653 | |a temperature | ||
653 | |a grain size | ||
653 | |a sheet resistance | ||
653 | |a electronic transport in graphene | ||
653 | |a valence charge density | ||
653 | |a graphene nanosheets | ||
653 | |a electron scattering | ||
653 | |a optical power | ||
653 | |a CVD graphene | ||
653 | |a circulating system | ||
700 | 1 | |a Kogan, Eugene | |
041 | 0 | 7 | |a eng |2 ISO 639-2 |
989 | |b DOAB |a Directory of Open Access Books | ||
500 | |a Creative Commons (cc), https://creativecommons.org/licenses/by/4.0/ | ||
024 | 8 | |a 10.3390/books978-3-0365-6167-7 | |
856 | 4 | 0 | |u https://www.mdpi.com/books/pdfview/book/6549 |7 0 |x Verlag |3 Volltext |
856 | 4 | 2 | |u https://directory.doabooks.org/handle/20.500.12854/95892 |z DOAB: description of the publication |
082 | 0 | |a 540 | |
082 | 0 | |a 530 | |
082 | 0 | |a 380 | |
520 | |a Graphene is an allotrope of carbon consisting of a single layer of atoms arranged in a two-dimensional (2D) honeycomb lattice. Graphene's unique properties of thinness and conductivity have led to global research into its applications as a semiconductor. With the ability to well conduct electricity at room temperature, graphene semiconductors could easily be implemented into the existing semiconductor technologies and, in some cases, successfully compete with the traditional ones, such as silicon. This reprint presents very recent results in the physics of graphene, which can be important for applying the material in electronics. |