Academic Journal
Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy
| Title: | Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy |
|---|---|
| Authors: | Hodgson, P D, Bentley, M, Delli, E, Beanland, R, Wagener, M C, Botha, J R, Carrington, P J |
| Contributors: | Joy Welch Educational Trust, Lancaster University Research Comittee, Engineering and Physical Sciences Research Council, Royal Academy of Engineering |
| Superior Title: | Semiconductor Science and Technology ; volume 33, issue 12, page 125021 ; ISSN 0268-1242 1361-6641 |
| Publisher Information: | IOP Publishing |
| Publication Year: | 2018 |
| Document Type: | article in journal/newspaper |
| Language: | unknown |
| DOI: | 10.1088/1361-6641/aae627 |
| DOI: | 10.1088/1361-6641/aae627/pdf |
| Availability: | https://doi.org/10.1088/1361-6641/aae627 http://stacks.iop.org/0268-1242/33/i=12/a=125021?key=crossref.41372e61cfa9cca01eec9b8afd22e63c http://stacks.iop.org/0268-1242/33/i=12/a=125021/pdf |
| Rights: | http://iopscience.iop.org/info/page/text-and-data-mining ; http://creativecommons.org/licenses/by/3.0/ |
| Accession Number: | edsbas.C1E3218F |
| Database: | BASE |
| Description not available. |