Conference
InGaBiAs/InP semiconductors for mid-infrared applications: Dependence of bandgap and spin-orbit splitting on temperature and bismuth content
| Title: | InGaBiAs/InP semiconductors for mid-infrared applications: Dependence of bandgap and spin-orbit splitting on temperature and bismuth content |
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| Authors: | Hosea, T. J. C., Marko, I. P., Batool, Z., Hild, K., Jin, S. R., Hossain, N., Chai, G. M. T., Sweeney, S. J., Petropoulos, J. P., Zhong, Y., Dongmo, P. B., Zide, J. M. O. |
| Superior Title: | 2012 IEEE 3rd International Conference on Photonics |
| Publisher Information: | IEEE |
| Publication Year: | 2012 |
| Document Type: | conference object |
| Language: | unknown |
| DOI: | 10.1109/icp.2012.6379872 |
| Availability: | https://doi.org/10.1109/icp.2012.6379872 http://xplorestaging.ieee.org/ielx5/6362335/6379517/06379872.pdf?arnumber=6379872 |
| Accession Number: | edsbas.B21BA45A |
| Database: | BASE |
| Description not available. |