Academic Journal

Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular beam epitaxy

Bibliographic Details
Title: Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular beam epitaxy
Authors: Yue, Fang-Yu, Chen, Lu, Li, Ya-Wei, Hu, Zhi-Gao, Sun, Lin, Yang, Ping-Xiong, Chu, Jun-Hao
Superior Title: Chinese Physics B ; volume 19, issue 11, page 117106 ; ISSN 1674-1056
Publisher Information: IOP Publishing
Publication Year: 2010
Document Type: article in journal/newspaper
Language: unknown
DOI: 10.1088/1674-1056/19/11/117106
Availability: https://doi.org/10.1088/1674-1056/19/11/117106
Accession Number: edsbas.4D56A689
Database: BASE
Description
Description not available.