Bibliographic Details
| Title: |
InGaBiAs/InP semiconductors for mid-infrared applications: Dependence of bandgap and spin-orbit splitting on temperature and bismuth content. |
| Authors: |
Hosea, T. J. C., Marko, I. P., Batool, Z., Hild, K., Jin, S. R., Hossain, N., Chai, G. M. T., Sweeney, S. J., Petropoulos, J. P., Zhong, Y., Dongmo, P. B., Zide, J. M. O. |
| Superior Title: |
2012 IEEE 3rd International Conference on Photonics; 1/ 1/2012, p154-158, 5p |
| Abstract: |
Replacing small amounts of As with Bi in InGaBiAs/InP induces large decreases and increases in the bandgap, Eg, and spin-orbit splitting, ΔSO, respectively. The possibility of achieving ΔSO>Eg and a reduced temperature (T) dependence for Eg are significant for suppressing recombination losses and improving performance in mid-infrared photonic devices. We measure Eg(x, T) and ΔSO(x, T) in In0.53Ga0.47BixAs1−x/InP samples for 0≤x≤0.032 by optical spectroscopy. While we find no clear evidence of a decreased dEg/dT (≈0.33±0.07meV/K in all samples) we find ΔSO>Eg for x>3.3–4.3%. The predictions of a valence band anti-crossing model agree well with the measurements. [ABSTRACT FROM PUBLISHER] |
|
Copyright of 2012 IEEE 3rd International Conference on Photonics is the property of IEEE and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| Database: |
Complementary Index |
