Bibliographic Details
| Title: |
Effect of a valence-band barrier on the quantum efficiency and background-limited dynamic resistance of compositionally graded HgCdTe P-on-n heterojunction photodiodes. |
| Authors: |
Weiler, M., Reine, M. |
| Superior Title: |
Journal of Electronic Materials; Sep1995, Vol. 24 Issue 9, p1329-1339, 11p |
| Abstract: |
A new analytical model for the bias-dependent quantum efficiency of a HgCdTe P-on-n heterojunction photodiode with a valence band barrier elucidates the important physics of the phenomenon and shows that the background-induced shunt resistance is a result of the same mechanism, that is, a tendency of the light-induced carriers to pile up in the base layer due to the retarding field produced by the barrier. A parameterized version of the model agrees well with experimental current-vs-voltage and noise measurements. [ABSTRACT FROM AUTHOR] |
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| Database: |
Complementary Index |
