Bibliographic Details
| Title: |
OMVPE growth of InGaAs on InP using tertiarybutylarsine. |
| Authors: |
Kellert, F., Chan, K. |
| Superior Title: |
Journal of Electronic Materials; Apr1990, Vol. 19 Issue 4, p311-315, 5p |
| Abstract: |
We have successfully grown bulk InGaAs on InP using tertiarybutylarsine (TBA), trimethylindium and trimethylgallium. The growth temperature was 602° and the V/III ratio ranged from 19 to 38. Net carrier concentrations were 2 - 4 × 10 cm, n-type, with a peak 77 K mobility of 68,000 cm/V. sec. Increasing compensation was observed in InGaAs grown at higher V/III ratios. PL spectra taken at 5 K revealed strong near bandgap emission at 0.81 eV-with the best sample having a FWHM of 2.5 meV. At lower energies, donor-acceptor pair transitions were evident. Strong and sharp 5 K PL emission was observed from InP/InGaAs/InP quantum wells grown with TBA. [ABSTRACT FROM AUTHOR] |
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| Database: |
Complementary Index |
