Bibliographic Details
| Title: |
Comparison of experimental results with theoretical models for the temperature dependence of the band gap of AlxGa1-xN epilayers. |
| Authors: |
Engelbrecht, J. A. A., Sephton, B., Engelbrecht, H. A., Botha, J. R., Goosen, W. E., Minnaar, E. G., Lee, M. E., Henry, A. |
| Superior Title: |
Journal of Materials Science: Materials in Electronics; Oct2022, Vol. 33 Issue 28, p22492-22498, 7p |
| Subject Terms: |
BAND gaps, ELECTRON spectroscopy, SCANNING electron microscopy, REFLECTANCE spectroscopy, FOURIER transforms |
| Abstract: |
The band gap energies AlxGa1-xN epilayers prepared on two different substrates were assessed using Fourier Transform Infrared (FTIR) reflectance spectroscopy, photoluminescence (PL) and scanning electron microscopy electron dispersive spectroscopy (SEM–EDS). The results were compared to various theoretical formulae to calculate the band gap, and deviations elucidated. [ABSTRACT FROM AUTHOR] |
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| Database: |
Complementary Index |
