Bibliographic Details
| Title: |
Ohmic metal/Hg1-xCdxTe (x ≈ 0.3) contacts. |
| Authors: |
Sizov, F, Tsybrii, Z, Apats'ka, M, Dmytruk, N, Slipokurov, V, Bunchuk, S, Bezsmolnyy, Yu, Popovych, V, Wiertel, M, Mikhailov, N |
| Superior Title: |
Semiconductor Science & Technology; Dec2020, Vol. 35 Issue 12, p1-12, 12p |
| Subject Terms: |
LIQUID phase epitaxy, OHMIC contacts, PHOTODETECTORS, CURRENT-voltage characteristics, MERCURY, HEAVY metals |
| Abstract: |
Some technological features of p-type Hg1-xCdxTe (x ≈ 0.3) liquid phase epitaxy layers grown on Cd1-yZnyTe (y ≈ 0.04) substrates are briefly discussed. Energy dispersive analysis of mercury-cadmium-telluride (MCT) layers and metal contacts (Au(In)/Cr(Mo,Ti)) to MCT layers together with their current-voltage characteristics at T ≈ 80 and 300 K are considered. It is shown that Cr(Mo,Ti)/MCT contacts have ohmic characteristics or close to them at T ≈ 80 and 300 K for both n- and p-type MCT layers. This gives the opportunity to form ohmic contacts to n- and p-type pads in one technological cycle. The contact resistance Rc is much smaller as compared to the HgCdTe p-n junction resistance R0[ RcA (< 10–2 Ω cm2) ≪ R0A (> 103 Ω cm2), where R0 is the zero bias diode resistance at T = 80 K, and A is the MCT (x ≈ 0.3) junction area]. So, such contacts are appropriate for the fabrication of photovoltaic HgCdTe detectors. [ABSTRACT FROM AUTHOR] |
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| Database: |
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