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Pulsed laser deposition of BiCuOSe thin films.

Bibliographic Details
Title: Pulsed laser deposition of BiCuOSe thin films.
Authors: Zakutayev, A.1, Newhouse, P.1, Kykyneshi, R.1, Hersh, P.2, Keszler, D.2, Tate, J.1 tate@physics.oregonstate.edu
Superior Title: Applied Physics A: Materials Science & Processing. Feb2011, Vol. 102 Issue 2, p485-492. 8p.
Subject Terms: *PULSED laser deposition, *BISMUTH compounds, *THIN films, *DOPED semiconductors, *MOLECULAR structure, *SILICA, *SUBSTRATES (Materials science)
Abstract: Undoped and 10% Ca-doped BiCuOSe thin films are prepared by pulsed laser deposition without ex-situ processing. The influence of the preparation conditions on structure and properties of BiCaCuOSe thin films on amorphous silica substrates is studied. The highest achieved concentration and mobility of free holes (3.9×10 cm and 3.5 cm/Vs) was close to that measured in strongly c-axis oriented samples on SrTiO substrates (4.0×10 cm and 7.5 cm/Vs). The BiCaCuOSe films on SrTiO show almost temperature-independent Seebeck coefficient and their resistivity increases with increasing temperature. The Seebeck coefficient of undoped BiCuOSe films on SrTiO increases below 150°K, and the resistivity shows a flat plateau centered at this temperature. Optical measurements suggest that BiCuOSe has an indirect bandgap of 0.8 eV and a strong absorption edge at 1.45 eV. Ab-initio calculations of the electronic band structure, effective masses and optical properties of BiCuOSe are also presented. [ABSTRACT FROM AUTHOR]
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