Bibliographic Details
| Title: |
Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion. |
| Authors: |
Pérez-Martín, E.1,2 (AUTHOR) elsapm@usal.es, González, T.1 (AUTHOR), Iñiguez-de-la-Torre, I.1 (AUTHOR), Mateos, J.1 (AUTHOR) |
| Superior Title: |
Journal of Applied Physics. 1/28/2024, Vol. 135 Issue 4, p1-7. 7p. |
| Subject Terms: |
*LOW temperatures, *SURFACE states, *DISPERSION (Chemistry), *DIODES |
| Abstract: |
The small-signal equivalent circuit of GaN-based self-switching diodes has been obtained, which apart from the intrinsic R ‖ C branch, generally used to describe the diode performance, needs new elements to describe the low-frequency dispersion of the impedance originated by the presence of surface and bulk traps. The proposed model allows us to reproduce not only the high-frequency results (extracted from S-parameter measurements in the 40 MHz–43.5 GHz range) at room temperature, but also the low-frequency impedance measurements (75 kHz–30 MHz) at cryogenic temperatures down to 70 K. These new elements are a self-inductance associated to the effect of surface states (typical of a device with a high surface-to-volume ratio) and an extra series R – C branch modeling the influence of the bulk traps. [ABSTRACT FROM AUTHOR] |
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| Database: |
Academic Search Premier |
