Bibliographic Details
| Title: |
Growth modes and chemical-phase separation in GaP1−xNx layers grown by chemical beam epitaxy on GaP/Si(001). |
| Authors: |
Ben Saddik, K.1 (AUTHOR), Fernández-Garrido, S.1,2 (AUTHOR), Volkov, R.3 (AUTHOR), Grandal, J.4 (AUTHOR), Borgardt, N.3 (AUTHOR), García, B. J.1,2 (AUTHOR) basilio.javier.garcia@uam.es |
| Superior Title: |
Journal of Applied Physics. 11/7/2023, Vol. 134 Issue 17, p1-15. 15p. |
| Subject Terms: |
*EPITAXY, *OPTOELECTRONIC devices, *MOLE fraction, *SURFACE morphology, *PHASE separation |
| Abstract: |
We investigated the chemical beam epitaxy of GaP 1 − x N x grown on nominally (001) -oriented Si substrates, as desired for the lattice-matched integration of optoelectronic devices with the standard Si technology. The growth mode and the chemical, morphological, and structural properties of samples prepared using different growth temperatures and N precursor fluxes were analyzed by several techniques. Our results show that, up to x ≈ 0.04 , it is possible to synthesize smooth and chemically homogeneous GaP 1 − x N x layers with a high structural quality. As the flux of the N precursor is increased at a given temperature to enhance N incorporation, the quality of the layers degrades upon exceeding a temperature-dependent threshold; above this threshold, the growing layer experiences a growth mode transition from 2D to 3D after reaching a critical thickness of a few nm. Following that transition, the morphology and the chemical composition become modulated along the [ 110 ] direction with a period of several tens of nm. The surface morphology is then characterized by the formation of { 113 } -faceted wires, while the N concentration is enhanced at the troughs formed in between adjacent (113) and (1 ¯ 1 ¯ 3). On the basis of this study, we conclude on the feasibility of fabricating homogeneous thick GaP 1 − x N x layers lattice matched to Si (x = 0.021) or even with N content up to x = 0.04. The possibility of exceeding a N mole fraction of 0.04 without inducing coupled morphological–compositional modulations has also been demonstrated when the layer thickness is kept below the critical value for the 2D–3D growth mode transition. [ABSTRACT FROM AUTHOR] |
|
Copyright of Journal of Applied Physics is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| Database: |
Academic Search Premier |
