Bibliographic Details
| Title: |
Growth of Bi2Te3 topological insulator ultra-thin layers via molecular beam epitaxy on GaAs (100). |
| Authors: |
Rodrigues, Leonarde N.1 (AUTHOR) leonarde.rodrigues@ufv.br, de Araujo, C. I. L.1 (AUTHOR), Mello, S. L. A.1 (AUTHOR), Laverock, J.2 (AUTHOR), Fonseca, Jakson M.1 (AUTHOR), Schwarzacher, W.3 (AUTHOR), Inoch, Wesley F.1 (AUTHOR), Ferreira, Sukarno O.1 (AUTHOR) |
| Superior Title: |
Journal of Applied Physics. 8/28/2023, Vol. 134 Issue 8, p1-7. 7p. |
| Subject Terms: |
*MOLECULAR beam epitaxy, *TOPOLOGICAL insulators, *ATOMIC force microscopy, *AUDITING standards, *PHOTOELECTRON spectroscopy |
| Abstract: |
Ultra-thin layers (< 8 nm) of a Bi 2 Te 3 topological insulator have been grown on GaAs (100) substrates using molecular beam epitaxy. The growth was performed from a single Bi 2 Te 3 effusion cell and one source of extra tellurium. Optical and structural characterizations were carried out through Raman spectroscopy, x-ray diffraction, atomic force microscopy, and scanning electron microscopy. The topological insulator properties were also investigated by angle-resolved photoelectron spectroscopy. A layer of 5 nm showed Dirac cone-like linear electronic band dispersion, indicating the signature of a topological insulator with the Dirac point having large binding energy relative to the Fermi level as expected for ultra-thin films. Topological insulator properties were also investigated at the initial growth stage where deposition follows an islandlike growth mode. Our results can contribute to the development of practical chalcogenide-based thin-film spintronics devices. [ABSTRACT FROM AUTHOR] |
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| Database: |
Academic Search Premier |
