Bibliographic Details
| Title: |
Characterization of ferromagnetic Ga[sub 1-x]Mn[sub x]N layers grown on sapphire (0001) substrates. |
| Authors: |
Yoon, I. T.1, Park, C. S.1, Kim, H. J.1, Kim, Y. G.1, Kang, T. W.1, Jeong, M. C.2, Ham, M. H.2, Myoung, J. M.2 |
| Superior Title: |
Journal of Applied Physics. 1/15/2004, Vol. 95 Issue 2, p591-596. 6p. 1 Black and White Photograph, 6 Graphs. |
| Subject Terms: |
*FERROMAGNETIC materials, *NITRIDES, *EPITAXY, *PHOTOLUMINESCENCE, *TRANSMISSION electron microscopy, *X-ray diffraction |
| Abstract: |
Ga[sub 1-x]Mn[sub x]N epilayers with a well-ordered ferromagnetic structure were grown on sapphire (0001) substrates, using the plasma enhanced molecular-beam epitaxy technique. Ga[sub 1-x]Mn[sub x]N films were found to be homogeneous, and to exhibit n-type conductivity and ferromagnetic ordering with a Curie temperature (T[sub C]) above room temperature. This was confirmed by transmission electron microscopy, x-ray diffraction, and by magnetometry using a superconducting quantum interference device. The high-temperature (T=300 K) photoluminescence (PL) spectra exhibited Mn-related free-to-acceptor pair transitions for Ga[sub 1-x]Mn[sub x]N layers with x≈0.2% and x≈0.6%. A Mn acceptor level of a Ga[sub 1-x]Mn[sub x]N layer with low Mn content was found to be located around 330 meV above the top of the valence band, suggesting that Mn-bound holes in group-III nitrides exhibit effective-masslike behavior. The excitation and temperature-dependent PL provided convincing evidence of a band-edge exciton to acceptor transition. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
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| Database: |
Academic Search Premier |
