Authors: Thoutam, Laxman Raju^Aff4, Tangi, Malleswararao^Aff5, Shivaprasad, S. M.^Aff5

Contributors: Thoutam, Laxman Raju, editor^Aff1, Tayal, Shubham, editor^Aff2, Ajayan, J., editor^Aff3

Superior Title: Emerging Materials : Design, Characterization and Applications. :3-36

Authors: Rahman, Altaf Ur^{Aff1, IDs11664022095859_cor1}, Jamil, Asif, Khan, Sajid, Ibrar, Muhammad, Ullah, Imran, Ahmad, Rashid, Dahshan, Alaa^{Aff5, Aff6}

Superior Title: Journal of Electronic Materials. 51(6):3317-3328

Authors: Kaur, Jaspinder^{Aff1, IDs10946022100603_cor1}, Basu, Rikmantra, Sharma, Ajay Kumar

Superior Title: Journal of Russian Laser Research. 43(3):361-369

Authors: Katharina Lorenz

Superior Title: Physics, Vol 4, Iss 2, Pp 548-564 (2022)

Subject Terms: group III nitrides, non-polar GaN, nanowires, ion implantation, doping, Physics, QC1-999

File Description: electronic resource

Relation: https://www.mdpi.com/2624-8174/4/2/36; https://doaj.org/toc/2624-8174

Access URL: https://doaj.org/article/4c17f7b278d24391a1266f289b825c88

Authors: Valentin Jmerik, Vladimir Kozlovsky, Xinqiang Wang

Superior Title: Nanomaterials; Volume 13; Issue 14; Pages: 2080

Subject Terms: ultraviolet C emission, electron-beam-pumped ultraviolet (UV)C emitters, AlGaN group III-nitrides, low dimensional structures, 2D quantum wells

File Description: application/pdf

Relation: Nanoelectronics, Nanosensors and Devices; https://dx.doi.org/10.3390/nano13142080

Availability: https://doi.org/10.3390/nano13142080

Authors: Sławomir P. Łepkowski

Superior Title: Nanomaterials; Volume 13; Issue 15; Pages: 2212

Subject Terms: quantum spin Hall effect, topological insulators, group-III nitrides, coupled quantum wells

File Description: application/pdf

Relation: Nanoelectronics, Nanosensors and Devices; https://dx.doi.org/10.3390/nano13152212

Availability: https://doi.org/10.3390/nano13152212

Authors: Das, Aparna^{Aff1, IDS0030400X2203002X_cor1}

Superior Title: Optics and Spectroscopy. 130(3):137-149

Authors: Ngo, Thi Huong, Comyn, Rémi, Chenot, Sébastien, Brault, Julien, Nemoz, Maud, Vennéguès, Philippe, Damilano, Benjamin, Vézian, S., Frayssinet, Eric, Cozette, Flavien, Defrance, N., Lecourt, François, Labat, Nathalie, Maher, Hassan, Cordier, Yvon

Contributors: Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Université Côte d'Azur (UCA), Institut Interdisciplinaire d'Innovation Technologique Sherbrooke (3IT), Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies et Nanosystèmes Sherbrooke (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Puissance - IEMN (PUISSANCE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), OMMIC, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), This work was supported by French technology facility network RENATECH and the French National Research Agency (ANR) through the projects ED-GaN (ANR-16-CE24-0026) and the “Investissements d’Avenir” program GaNeX (ANR-11-LABX-0014)., Renatech Network, CMNF, ANR-16-CE24-0026,ED-GaN,Co-intégration des transistors GaN à enrichissement et à déplétion pour les circuits de communication RF de la prochaine génération(2016), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011)

Superior Title: ISSN: 0022-0248 ; Journal of Crystal Growth ; https://hal.science/hal-03741626 ; Journal of Crystal Growth, 2022, 593, pp.126779. ⟨10.1016/j.jcrysgro.2022.126779⟩.

Subject Terms: Selective sublimation, Local area epitaxy, Group III-nitrides, High electron mobility transistors, [SPI]Engineering Sciences [physics]

Relation: hal-03741626; https://hal.science/hal-03741626; https://hal.science/hal-03741626/document; https://hal.science/hal-03741626/file/ThiHuongNgo_JCrystalGrowth_AAM_2022.pdf

Availability: https://doi.org/10.1016/j.jcrysgro.2022.126779
https://hal.science/hal-03741626
https://hal.science/hal-03741626/document
https://hal.science/hal-03741626/file/ThiHuongNgo_JCrystalGrowth_AAM_2022.pdf

Authors: Sławomir P. Łepkowski, Abdur Rehman Anwar

Superior Title: Nanomaterials; Volume 12; Issue 14; Pages: 2418

Subject Terms: topological phase transition, topological insulators, group-III nitrides, double quantum wells

File Description: application/pdf

Relation: Nanoelectronics, Nanosensors and Devices; https://dx.doi.org/10.3390/nano12142418

Availability: https://doi.org/10.3390/nano12142418

Authors: Sakharov, A. V.^Aff1, Lundin, W. V., Zavarin, E. E., Usov, S. O., Brunkov, P. N., Tsatsulnikov, A. F.

Superior Title: Technical Physics Letters. 46(12):1211-1214

Authors: Bondarenko, V. B., Filimonov, A. V.^{Aff1, Aff2}, Kumar, Ravi

Superior Title: Technical Physics Letters. 47(1):8-10

Authors: Wooje Cho (4413013), Zirui Zhou (8903816), Ruiming Lin (8049983), Justin C. Ondry (5503673), Dmitri V. Talapin (1235877)

Subject Terms: Biophysics, Biochemistry, Medicine, Microbiology, Molecular Biology, Biotechnology, Ecology, Chemical Sciences not elsewhere classified, physical vapor transport, great technological importance, enable cost reductions, based device integration, 300 ° c, organic surface ligands, group iii nitrides, organic solvent mixtures, molten salt phase, producing crystalline iii, gan nanocrystals produced, biphasic molten salt, biphasic molten, molten salt, crystalline gan, solvent mixture, nitride nanocrystals, colloidal gan, aln nanocrystals, work demonstrates, widely manufactured, viable option

Relation: https://figshare.com/articles/journal_contribution/Synthesis_of_Colloidal_GaN_and_AlN_Nanocrystals_in_Biphasic_Molten_Salt_Organic_Solvent_Mixtures_under_High-Pressure_Ammonia/21841362

Availability: https://doi.org/10.1021/acsnano.2c09552.s001

Authors: Cimalla, Volker^Aff4

Contributors: Urban, Gerald, Series Editor^Aff1, Schöning, Michael J., editor^Aff2, Poghossian, Arshak, editor^Aff3

Superior Title: Label-Free Biosensing : Advanced Materials, Devices and Applications. 16:59-102

Authors: Mulcue, L. F.^{Aff1, Aff2}, de la Cruz, W., Saldarriaga, W.^Aff4

Superior Title: Applied Physics A: Materials Science & Processing. 127(6)

Authors: Alexander Ho (9361769), Rajib Mandal (3096411), Richard R. Lunt (1788397), Rebecca J. Anthony (1475485)

Subject Terms: Biophysics, Medicine, Microbiology, Pharmacology, Biotechnology, Chemical Sciences not elsewhere classified, battery materials, nanocrystal form, power electronics, GaN nanocrystals, group III nitride nanoparticle synt., results point, method, Gallium Nitride Nanoparticles, surface composition, Electronic Applications Group III n., electroluminescent devices, gallium nitride, Nonthermal Plasma Synthesis, radio-frequency nonthermal plasma

Relation: https://figshare.com/articles/journal_contribution/Nonthermal_Plasma_Synthesis_of_Gallium_Nitride_Nanoparticles_Implications_for_Optical_and_Electronic_Applications/14642417

Availability: https://doi.org/10.1021/acsanm.1c00544.s001

Authors: Yanqing Jia (8715225), Jing Ning (1481449), Jincheng Zhang (1925317), Boyu Wang (383447), Chaochao Yan (4276006), Yu Zeng (67023), Haidi Wu (11037174), Yachao Zhang (840874), Xue Shen (2803513), Chi Zhang (9857), Haibin Guo (9427485), Dong Wang (73290), Yue Hao (1261215)

Subject Terms: Ecology, Developmental Biology, Infectious Diseases, Mathematical Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Information Systems not elsewhere classified, graphene, LOP, as-fabricated violet GaN-based ligh., High-Quality Transferred GaN-Based ., Oxygen-Assisted Plasma Patterning, nitride films, group III nitride semiconductors, LED, O 2 plasma changes, light output power

Relation: https://figshare.com/articles/journal_contribution/High-Quality_Transferred_GaN-Based_Light-Emitting_Diodes_through_Oxygen-Assisted_Plasma_Patterning_of_Graphene/14867217

Availability: https://doi.org/10.1021/acsami.1c04659.s001

Authors: Andrew C. Lang (10263190), D. Scott Katzer (5408165), Neeraj Nepal (6812060), David J. Meyer (4767768), Rhonda M. Stroud (1276299)

Subject Terms: Medicine, Evolutionary Biology, Cancer, Infectious Diseases, Space Science, Biological Sciences not elsewhere classified, Physical Sciences not elsewhere classified, growth parameters, beam epitaxy-grown γ- Ta 2 N films, Epitaxial Metallic Ta 2 N, phase identification, superconducting device structures, bulk characterization, Ta vacancy, Ta vacancy concentration, X-ray diffraction, γ phase, group III-nitride semiconductors, film metals, Films Epitaxial transition metal ni., epitaxial TMN material, aberration-corrected scanning trans., Ta manifests, Vacancy Imaging, Ta vacancies, crystal structures, SiC substrates, tantalum nitrides, TMN compounds

Relation: https://figshare.com/articles/journal_contribution/Phase_Identification_and_Ordered_Vacancy_Imaging_in_Epitaxial_Metallic_Ta_sub_2_sub_N_Thin_Films/14173201

Availability: https://doi.org/10.1021/acsami.0c22244.s001

Authors: Knauer, Arne, Mogilatenko, Anna, Weinrich, Jonas, Hagedorn, Sylvia, Walde, Sebastian, Kolbe, Tim, Cancellara, Leonardo, Weyers, Markus

Superior Title: Crystal research and technology : journal of experimental and industrial crystallography 55 (2020), Nr. 9

Subject Terms: dislocations, group-III nitrides, substrate curvature, UV LED, ddc:540, ddc:660

File Description: application/pdf

Relation: ESSN:1521-4079; https://oa.tib.eu/renate/handle/123456789/6492; https://doi.org/10.34657/5539

Availability: https://doi.org/10.34657/5539
https://doi.org/10.1002/crat.201900215
https://oa.tib.eu/renate/handle/123456789/6492

Authors: Kirste, Ronny, Mohn, Stefan, Wagner, Markus R., Reparaz, Juan S., Hoffmann, Axel

Subject Terms: 530 Physik, phonon-plasmon-coupling, ternary group-III-nitrides, Raman spectroscopy

File Description: application/pdf

Relation: https://depositonce.tu-berlin.de/handle/11303/10854; http://dx.doi.org/10.14279/depositonce-9749

Availability: https://doi.org/10.14279/depositonce-9749
https://depositonce.tu-berlin.de/handle/11303/10854

Authors: Papadimitriou, Dimitra N.

Subject Terms: 530 Physik, group-III nitrides, polarization fields, PIN-Diodes, electroreflectance, electroluminescence

File Description: application/pdf

Relation: https://depositonce.tu-berlin.de/handle/11303/10806; http://dx.doi.org/10.14279/depositonce-9699

Availability: https://doi.org/10.14279/depositonce-9699
https://depositonce.tu-berlin.de/handle/11303/10806