Authors: Benson, J.D., Bubulac, L.O., Smith, P.J., Jacobs, R.N., Markunas, J.K., Jaime-Vasquez, M., Almeida, L.A., Stoltz, A., Arias, J.M., Brill, G., Chen, Y., Wijewarnasuriya, P.S., Farrell, S., Lee, U.

Superior Title: Journal of Electronic Materials. October 2012 41(10):2971-2974

Authors: D’Souza, A.I., Robinson, E., Ionescu, A.C., Okerlund, D., de Lyon, T.J., Sharifi, H., Roebuck, M., Yap, D., Rajavel, R.D., Dhar, N., Wijewarnasuriya, P.S., Grein, C.

Superior Title: Journal of Electronic Materials. October 2012 41(10):2671-2678

Authors: Bubulac, L. O., Benson, J.D., Jacobs, R.N., Stoltz, A.J., Jaime-Vasquez, M., Almeida, L. A., Wang, A., Wang, L., Hellmer, R., Golding, T., Dinan, J.H., Carmody, M., Wijewarnasuriya, P.S., Lee, M.F., Vilela, M.F., Peterson, J., Johnson, S.M., Lofgreen, D.F., Rhiger, D.

Superior Title: Journal of Electronic Materials. March 2011 40(3):280-288

Authors: Emelie, P.Y., Velicu, S., Grein, C.H., Phillips, J.D., Wijewarnasuriya, P.S., Dhar, N.K.

Superior Title: Journal of Electronic Materials. September 2008 37(9):1362-1368

Authors: Chang, Yong, Becker, C.R., Grein, C.H., Zhao, J., Fulk, C., Casselman, T., Kiran, R., Wang, X.J., Robinson, E., An, S.Y., Mallick, S., Sivananthan, S., Aoki, T., Wang, C.Z., Smith, D.J., Velicu, S., Zhao, J., Crocco, J., Chen, Y., Brill, G., Wijewarnasuriya, P.S., Dhar, N., Sporken, R., Nathan, V.

Superior Title: Journal of Electronic Materials. September 2008 37(9):1171-1183

Authors: D'Souza, Arvind I., Wijewarnasuriya, P.S., Poksheva, John G.

Superior Title: In Thin Films 2001 28:193-226

Authors: Akturk, A., Goldsman, N., Dhar, N., Wijewarnasuriya, P.S.

Superior Title: 2005 International Semiconductor Device Research Symposium

Availability: https://doi.org/10.1109/isdrs.2005.1595982
http://xplorestaging.ieee.org/ielx5/10640/33577/01595982.pdf?arnumber=1595982

Authors: Boukerche, M., Sivananthan, S., Wijewarnasuriya, P.S., Yoo, S.S., DeSouza, M., Sou, I.K., Lange, M., Faurie, J.P.

Relation: http://repository.ust.hk/ir/Record/1783.1-50664; Proceedings of the 4th international conference on shallow impurities in semiconductors, London, July 31 - August 2, 1990

Availability: http://repository.ust.hk/ir/Record/1783.1-50664

Authors: Wijewarnasuriya, P.S., Aqariden, F., Grein, C.H., Faurie, J.P., Sivananthan, S.

Superior Title: Journal of Crystal Growth ; volume 175-176, page 647-652 ; ISSN 0022-0248

Subject Terms: Materials Chemistry, Inorganic Chemistry, Condensed Matter Physics

Availability: https://doi.org/10.1016/s0022-0248(96)01230-4
https://api.elsevier.com/content/article/PII:S0022024896012304?httpAccept=text/xml
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Authors: Wijewarnasuriya, P.S., Faurie, J.P., Sivananthan, S.

Superior Title: Journal of Crystal Growth ; volume 159, issue 1-4, page 1136-1140 ; ISSN 0022-0248

Subject Terms: Materials Chemistry, Inorganic Chemistry, Condensed Matter Physics

Availability: https://doi.org/10.1016/0022-0248(95)00877-2
https://api.elsevier.com/content/article/PII:0022024895008772?httpAccept=text/xml
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Authors: D'Souza, A.I., Robinson, E., Ionescu, A.C., Okerlund, D., Lyon, T.J., Sharifi, H., Roebuck, M., Yap, D., Rajavel, R.D., Dhar, N., Wijewarnasuriya, P.S., Grein, C.

Superior Title: Journal of Electronic Materials; Oct2012, Vol. 41 Issue 10, p2671-2678, 8p, 2 Diagrams, 1 Chart, 12 Graphs

Subject Terms: ALLOYS, INDIUM arsenide, INDIUM arsenide epitaxy, WAVELENGTHS, ABSORPTION

Authors: D'Souza, Arvind I., Wijewarnasuriya, P.S., G. Poksheva, John

Superior Title: In Handbook of Thin Film Devices, Five-Volume Set 2000:1-25

Authors: Boukerche, M., Sivananthan, S., Wijewarnasuriya, P.S., Yoo, S.S., DeSouza, M., Sou, I.K., Lange, Matthias, Faurie, J.P.

Superior Title: Materials Science Forum; January 1991, Vol. 65 Issue: 1 p389-396, 8p

Authors: Sou, I.K., Wijewarnasuriya, P.S., Boukerche, M., Faurie, J.P.

Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-50837; Applied Physics Letters, v. 55, (10), September 1989, p. 954-956; https://doi.org/10.1063/1.101734; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0003-6951&rft.volume=55&rft.issue=10&rft.date=1989&rft.spage=954&rft.aulast=Sou&rft.aufirst=I.K.&rft.atitle=Role+of+the+crystallographic+orientation+on+the+incorporation+of+indium+in+HgCdTe+epilayers+grown+by+molecular+beam+epitaxy&rft.title=Applied+physics+letters; http://www.scopus.com/record/display.url?eid=2-s2.0-0345028139&origin=inward; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=A1989AN59300010

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Authors: Wijewarnasuriya, P.S., Sou, I.K., Kim, Y.J., Mahavadi, K.K., Sivananthan, S., Boukerche, M., Faurie, J.P.

Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-50844; Applied Physics Letters, v. 51, (24), December 1987, p. 2025-2027; https://doi.org/10.1063/1.98281; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0003-6951&rft.volume=51&rft.issue=24&rft.date=1987&rft.spage=2025&rft.aulast=Wijewarnasuriya&rft.aufirst=P.S.&rft.atitle=Electrical+properties+of+Li-doped+Hg1-xCdxTe%28100%29+by+molecular+beam+epitaxy&rft.title=Applied+physics+letters; http://www.scopus.com/record/display.url?eid=2-s2.0-21544435127&origin=inward; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=A1987L171900019

Availability: https://doi.org/10.1063/1.98281
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Authors: Reno, J., Sou, I.K., Wijewarnasuriya, P.S., Faurie, J.P.

Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-50842; Applied Physics Letters, v. 48, (16), April 1986, p. 1069-1071; https://doi.org/10.1063/1.96599; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0003-6951&rft.volume=48&rft.issue=16&rft.date=1986&rft.spage=1069&rft.aulast=Reno&rft.aufirst=J.&rft.atitle=Molecular+beam+epitaxial+growth+and+characterization+of+a+novel+superlattice+system%3A+Hg1-xCdxTe-CdTe&rft.title=Applied+physics+letters; http://www.scopus.com/record/display.url?eid=2-s2.0-36549098326&origin=inward; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=A1986A922100015

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Authors: Reno, J., Sou, I.K., Wijewarnasuriya, P.S., Faurie, J.P.

Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-50849; Applied physics letters, v. 47, (11), December 1985, p. 1168-1169; https://doi.org/10.1063/1.96314; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0003-6951&rft.volume=47&rft.issue=11&rft.date=1985&rft.spage=1168&rft.aulast=Reno&rft.aufirst=J.&rft.atitle=Growth+and+characterization+of+Hg1-xMnxTe+grown+by+molecular+beam+epitaxy&rft.title=Applied+physics+letters; http://www.scopus.com/record/display.url?eid=2-s2.0-3943085868&origin=inward; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=A1985AUS2200017

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Authors: Garland, J.W., Grein, C.H., Yang, B., Wijewarnasuriya, P.S., Aqariden, F.

Superior Title: Applied Physics Letters; 4/5/1999, Vol. 74 Issue 14, p1975, 3p, 2 Graphs

Subject Terms: ARSENIC, MOLECULAR beam epitaxy, SEMICONDUCTOR doping, SECONDARY ion mass spectrometry