Authors: Sredin, V. G.Aff1, Voitsekhovskii, A. V., Sakharov, M. V., Talipov, N. Kh.
Superior Title: Russian Physics Journal. 62(6):1062-1065
Authors: Talipov, N. Kh.Aff1, Voitsekhovskii, A. V.Aff2
Superior Title: Russian Physics Journal. 61(6):1005-1023
Authors: Ismailov, N. D.Aff1, Talipov, N. Kh.Aff2, Voitsekhovskii, A. V.Aff3
Superior Title: Russian Physics Journal. 60(12):2186-2192
Authors: Zyablyuk K. N., Mityagin A. Yu., Talipov N. H., Chucheva G. V., Duhnovskii M. P., Khmel’nitskii R. A.
Superior Title: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5, Pp 39-43 (2012)
Subject Terms: diamond, boron doping, ion implantation, microwave transistor, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
File Description: electronic resource
Authors: Talipov, N. Kh., Voitsekhovskii, А. V., Grigor’ev, D. V.
Superior Title: Russian Physics Journal. July 2014 57(3):345-358
Superior Title: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 6, Pp 13-19 (2011)
Subject Terms: field-effect diamond RF-transistor, fluent shutter model, volt-ampere characteristic, maximum power of transistor, gain of the transistor, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
File Description: electronic resource
Authors: Talipov, N. Kh.1 niyazt@yandex.ru, Voitsekhovskii, A. V.2 vav43@mail.tsu.ru
Superior Title: Russian Physics Journal. Oct2018, Vol. 61 Issue 6, p1005-1023. 19p.
Subject Terms: *IONS, *SEMICONDUCTORS, *CRYSTAL structure, *X-ray diffraction, *HETEROSTRUCTURES
Authors: Garber, G. Z., Dorofeev, A. A., Zubkov, A. M., Kolkovskii, Yu. V., Kontsevoi, Yu. A., Zyablyuk, K. N., Mityagin, A. Yu., Talipov, N. Kh., Chucheva, G. V.
Superior Title: Journal of Communications Technology and Electronics. April 2014 59(4):379-383
Authors: Gulyaev, Yu. V., Mityagin, A. Yu., Chucheva, G. V., Afanas’ev, M. S., Zyablyuk, K. N., Talipov, N. Kh., Nedosekin, P. G., Nabiev, A. E.
Superior Title: Journal of Communications Technology and Electronics. March 2014 59(3):282-287
Authors: Boltar’, K. O., Burlakov, I. D., Voitsekhovskii, А. V., Sizov, А. L., Sredin, V. G., Talipov, N. Kh., Shul’ga, S. А.
Superior Title: Russian Physics Journal. December 2013 56(8):882-889
Authors: Voitsekhovskii, A. V., Talipov, N. Kh.
Superior Title: Russian Physics Journal. December 2013 56(7):763-777
Authors: Voitsekhovskii, A. V., Nikitin, M. S., Talipov, N. Kh.
Superior Title: Russian Physics Journal. October 2013 56(5):599-605
Authors: Altukhov A. A., Afanas’ev M. S., Zyabliuk K. N., Mityagin A. Yu., Talipov N. H., Chucheva G. V.
Superior Title: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5, Pp 14-16 (2011)
Subject Terms: diamond, hydrogenation, microwave transistors, Schottky barriers, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
File Description: electronic resource
Authors: Ismailov, N. D.1 ismailovnamik@yahoo.com, Talipov, N. Kh.2 niyazt@yandex.ru, Voitsekhovskii, A. V.3 vav43@mail.tsu.ru
Superior Title: Russian Physics Journal. Apr2018, Vol. 60 Issue 12, p2186-2192. 7p.
Subject Terms: *PHOTOELECTRIC effect, *PHOTORESISTORS, *POTENTIAL barrier, *ELECTRON relaxation time, *PHOTOSENSITIVITY
Authors: Talipov, N. Kh.
Superior Title: Russian Physics Journal. May 2013 55(12):1373-1385
Authors: Khairetdinova, A. F., Saitov, R. I., Abdeev, R. G., Talipov, N. S.
Superior Title: Measurement Techniques. April 2012 55(1):104-107
Superior Title: Journal of Communications Technology and Electronics. June 2010 55(6):716-719
Authors: Voitsekhovskii, A. V., Grigor’ev, D. V., Talipov, N. Kh.
Superior Title: Russian Physics Journal. October 2008 51(10):1001-1015
Authors: Voitsekhovskii, A. V., Volkov, V. S., Grigor’ev, D. V., Izhnin, I. I., Korotaev, A. G., Kokhanenko, A. P., Posyatsk, M., Sredin, V. G., Talipov, N. Kh.
Superior Title: Russian Physics Journal. September 2008 51(9):936-942