Authors: Bergmann, Lukas, Bakran, Mark‐M.

Superior Title: IET Power Electronics (Wiley-Blackwell); 5/20/2024, Vol. 17 Issue 7, p789-801, 13p

Subject Terms: WIDE gap semiconductors, SEMICONDUCTORS, SEMICONDUCTOR design, BRIDGE design & construction, METAL oxide semiconductor field-effect transistors

Authors: Wei, Chao, Tang, Jian, Huang, Wenbin

Superior Title: Acta Mechanica; Feb2024, Vol. 235 Issue 2, p925-939, 15p

Subject Terms: SEMICONDUCTOR devices, COMPOSITE structures, PIEZOELECTRICITY, SEMICONDUCTOR design, STRUCTURAL design, PIEZOELECTRIC composites, COMPOSITE construction

Authors: Jie Li¹, Hasan, S. M. Rezaul¹ hasanmic@massey.ac.nz

Superior Title: Active & Passive Electronic Components. 2010, Special section p1-5. 5p. 4 Color Photographs, 1 Diagram, 1 Chart, 4 Graphs.

Subject Terms: COMPLEMENTARY metal oxide semiconductor design & construction, LOW noise amplifiers, RADIO frequency identification systems, ELECTRIC impedance, NANOELECTROMECHANICAL systems, ELECTRIC potential

Authors: Xuehao Mou¹, Register, Leonard F.¹, Macdonald, Allan H.², Banerjee, Sanjay K.¹

Superior Title: IEEE Transactions on Electron Devices. Nov2017, Vol. 64 Issue 11, p4759-4762. 4p.

Subject Terms: JUNCTION transistors, COMPLEMENTARY metal oxide semiconductor design & construction, EXCITON theory, CONDENSATION, COULOMB'S law

Authors: J. W. Liu, M. Y. Liao, Imura, M., Banal, R. G., Koide, Y.

Superior Title: Journal of Applied Physics; 2017, Vol. 121 Issue 22, p1-10, 10p, 1 Black and White Photograph, 1 Chart, 7 Graphs

Subject Terms: DIAMOND thin films, SPUTTER deposition, METAL oxide semiconductor design & construction, METAL oxide semiconductor field-effect transistors -- Design & construction, ATOMIC layer deposition

Authors: Gorbunov, Maxim S.¹, Dolotov, Pavel S.¹, Antonov, Andrey A.¹, Zebrev, Gennady I.², Emeliyanov, Vladimir V.³, Boruzdina, Anna B.⁴, Petrov, Andrey G.⁴, Ulanova, Anastasia V.⁴

Superior Title: IEEE Transactions on Nuclear Science. Aug2014 Part 1, Vol. 61 Issue 4, p1575-1582. 8p.

Subject Terms: COMPLEMENTARY metal oxide semiconductor design & construction, STATIC random access memory chips, HEAVY ions, RADIATION hardening (Electronics), SINGLE event effects

Authors: Nikoubin, Tooraj¹, Grailoo, Mahdieh², Li, Changzhi¹

Superior Title: International Journal of Electronics. Oct2014, Vol. 101 Issue 10, p1357-1374. 18p.

Subject Terms: *ENERGY consumption, ELECTRIC circuits, COMPLEMENTARY metal oxide semiconductor design & construction, TRANSISTORS, COMPUTER simulation, INVERSE functions

Authors: Sherizadeh, Robab¹, Navimipour, Nima Jafari¹ jafari@iaut.ac.ir

Superior Title: Optik - International Journal for Light & Electron Optics. Apr2018, Vol. 158, p477-489. 13p.

Subject Terms: *COMPLEMENTARY metal oxide semiconductor design & construction, *QUANTUM dots, *CELLULAR automata, *RANDOM access memory, *ENERGY dissipation, *FIELD programmable gate arrays

Authors: Prache, Pierre^1,2 pierre.prache@centralesupelec.fr, Juillard, Jérôme¹ jerome.juillard@centralesupelec.fr, Ferreira, Pietro Maris¹, Barniol, Núria² nuria.barniol@uab.cat, Riverola, Marti²

Superior Title: Sensors & Actuators A: Physical. Jan2018, Vol. 269, p160-170. 11p.

Subject Terms: *COMPLEMENTARY metal oxide semiconductor design & construction, *INJECTION locked oscillators, *SYSTEMS on a chip, *OPTIMAL designs (Statistics), *MICROELECTROMECHANICAL systems

Authors: Kenta Watanabe¹, Mikito Nozaki¹, Takahiro Yamada¹, Satoshi Nakazawa², Yoshiharu Anda², Masahiro Ishida², Tetsuzo Ueda², Akitaka Yoshigoe³, Takuji Hosoi¹ hosoi@mls.eng.osaka-u.ac.jp, Takayoshi Shimura¹, Heiji Watanabe¹ watanabe@mls.eng.osaka-u.ac.jp

Superior Title: Applied Physics Letters. 7/24/2017, Vol. 111 Issue 4, p042102-1-042102-5. 5p. 5 Graphs.

Subject Terms: *METAL oxide semiconductor design & construction, *ALUMINUM gallium nitride, *GALLIUM nitride, *DIELECTRIC materials, *INTERFACES (Physical sciences), *THERMAL stability

Authors: Li, Yun‐Chong¹ (AUTHOR), Jiao, Bo¹ (AUTHOR) bojiao@mail.xjtu.edu.cn, Zhang, Yi‐Jun² (AUTHOR), Wang, Jian³ (AUTHOR) jian.wang@xjtu.edu.cn, Ren, Wei² (AUTHOR), Zhang, De‐Wen³ (AUTHOR), Hou, Xun¹ (AUTHOR), Wu, Zhao‐Xin¹ (AUTHOR) zhaoxinwu@mail.xjtu.edu.cn

Superior Title: Advanced Materials Technologies. Aug2021, Vol. 6 Issue 8, p1-8. 8p.

Subject Terms: *SEMICONDUCTOR materials, *CONSTRUCTION materials, *SEMICONDUCTOR design, *FULLERENES, *ENVIRONMENTAL monitoring, *ORGANIC semiconductors

Authors: Sharma, Vijay Kumar¹, Pattanaik, Manisha²

Superior Title: Journal of Circuits, Systems & Computers. Nov2016, Vol. 25 Issue 11, p-1. 16p.

Subject Terms: *STANDARD cells, *COMPLEMENTARY metal oxide semiconductor design & construction, *POWER supply circuits, *TRANSISTOR amplifiers, *ELECTRIC circuit design & construction

Authors: Souliotis, G.¹, Plessas, F.¹ fotis.plessas@analogies.eu, Liakou, F.¹, Birbas, M.¹

Superior Title: International Journal of Electronics. Nov2013, Vol. 100 Issue 11, p1529-1545. 17p.

Subject Terms: *ENERGY consumption, *BANDWIDTHS, SECOND harmonic generation, COMPLEMENTARY metal oxide semiconductor design & construction, MULTIPHASE flow, ELECTRIC potential, ELECTRIC currents

Authors: Gupta, Suyog¹, Moroz, Victor², Smith, Lee², Lu, Qiang², Saraswat, Krishna C.¹

Superior Title: IEEE Transactions on Electron Devices. May2014, Vol. 61 Issue 5, p1222-1230. 9p.

Subject Terms: COMPLEMENTARY metal oxide semiconductor design & construction, METAL oxide semiconductor field-effect transistors, STRAINS & stresses (Mechanics), SILICON alloys, COMPUTER simulation, PERFORMANCE of field-effect transistors

Authors: Kong, Moufu¹, Du, Wenfang¹, Chen, Xingbi¹

Superior Title: IEEE Transactions on Electron Devices. Oct2013, Vol. 60 Issue 10, p3508-3514. 7p.

Subject Terms: METAL oxide semiconductor design & construction, ELECTRIC displacement, HOLE density, COMPUTER simulation, ELECTRODES, ELECTRIC resistors

Superior Title: MarketWatch: Global Round-up. Oct2009, Vol. 8 Issue 10, p217-225. 9p. 1 Chart.

Subject Terms: *TELECOMMUNICATION equipment, *MARKET positioning, SEMICONDUCTOR design, LIQUID crystal displays -- Design & construction, INFORMATION technology equipment

Geographic Terms: SOUTH Korea

Company/Entity: SAMSUNG Electronics Co. Ltd. 620489856

Authors: Gruner, Daniel¹, Sorge, Roland², Bengtsson, Olof³, Tanany, Ahmed Al¹, Boeck, Georg¹

Superior Title: IEEE Transactions on Microwave Theory & Techniques. 12/15/2010, Vol. 58 Issue 12, p4022-4030. 9p.

Subject Terms: *LOCAL area networks, FIELD-effect transistors -- Design & construction, METAL oxide semiconductor design & construction, ELECTRIC potential, RADIO frequency, ELECTRONIC amplifiers, ELECTRIC oscillators

Authors: Wu, Hao¹, Wang, Hua^1,2, Li, Guanghai^1,2

Superior Title: Analyst. 1/21/2017, Vol. 142 Issue 2, p326-335. 10p.

Subject Terms: *METAL oxide semiconductor design & construction, *SERS spectroscopy

Authors: Rastegar Pashaki, Elahe¹, Shalchian, M.¹ shalchian@aut.ac.ir

Superior Title: Integration: The VLSI Journal. Sep2016, Vol. 55, p194-201. 8p.

Subject Terms: *COMPLEMENTARY metal oxide semiconductor design & construction, *SIMULATION methods & models, *DIFFUSION, *ROBUST control, *ENERGY consumption

Authors: Nguyen, The Van¹, Crebier, Jean-Christophe¹, Jeannin, Pierre-Olivier¹

Superior Title: IEEE Transactions on Industry Applications. Jan2013, Vol. 49 Issue 1, p189-197. 9p.

Subject Terms: *INTEGRATED circuits, COMPLEMENTARY metal oxide semiconductor design & construction, LOGIC circuits, PULSE transformers, INSULATED gate bipolar transistors, DC-to-DC converters, ELECTRIC inverters, ZENER diodes