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Academic Journal

Contributors: Perustieteiden korkeakoulu, School of Science, Teknillisen fysiikan laitos, Department of Applied Physics, Aalto-yliopisto, Aalto University

Subject Terms: Physics, ZnO, Zn vacancies, MOCVD

File Description: application/pdf

Relation: Applied Physics Letters; Volume 86, Issue 4; Zubiaga, A. & Tuomisto, Filip & Plazaola, F. & Saarinen, K. & Garcia, J. A. & Rommeluere, J. F. & Zuniga-Perez, J. & Munoz-Sanjose, V. 2005. Zinc vacancies in the heteroepitaxy of ZnO on sapphire: Influence of the substrate orientation and layer thickness. Applied Physics Letters. Volume 86, Issue 4. 042103/1-3. ISSN 0003-6951 (printed). DOI:10.1063/1.1855412; 0003-6951 (printed); https://aaltodoc.aalto.fi/handle/123456789/17484; URN:NBN:fi:aalto-201508184102