Showing 1 - 20 results of 423 for search 'O'Reilly, Eoin P.' Narrow Search
1
Academic Journal

Authors: Broderick, Christopher A.1,2 (AUTHOR) c.broderick@umail.ucc.ie, O'Reilly, Eoin P.1,2 (AUTHOR) eoin.oreilly@tyndall.ie, Schulz, Stefan1,2 (AUTHOR)

Superior Title: Journal of Applied Physics. 3/14/2024, Vol. 135 Issue 10, p1-24. 24p.

4
Academic Journal

Authors: O'Reilly, Eoin

Superior Title: Accountancy Ireland. Vol. 43 Núm. 2, Abril 2011.

5
Academic Journal

Authors: Murphy, Cónal1,2 (AUTHOR) conalmurphy@umail.ucc.ie, O'Reilly, Eoin P1,2 (AUTHOR), Broderick, Christopher A1,2 (AUTHOR) c.broderick@umail.ucc.ie

Superior Title: Journal of Physics D: Applied Physics. 1/19/2024, Vol. 57 Issue 3, p1-15. 15p.

9
Conference
10
Conference

Contributors: Osiński, Marek, Arakawa, Yasuhiko, Witzigmann, Bernd

Superior Title: Physics and Simulation of Optoelectronic Devices XXXI

14
Academic Journal

Contributors: Vitiello, E, Rossi, S, Broderick, C, Gravina, G, Balocchi, A, Marie, X, O’Reilly, E, Myronov, M, Pezzoli, F

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000601401100004; volume:14; issue:6; numberofpages:9; journal:PHYSICAL REVIEW APPLIED; http://hdl.handle.net/10281/299143; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85099144857

18
Academic Journal

File Description: application/pdf

Relation: info:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/13/SIRG/2210/IE/Shaping the electronic and optical properties of non- and semi-polar nitride-based semiconductor nanostructures/; info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2513/IE/Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices/; info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3082/IE/Multiscale Simulation and Analysis of emerging Group IV and III-V Semiconductor Materials and Devices/; info:eu-repo/grantAgreement/NSF/Directorate for Mathematical & Physical Sciences::Division of Materials Research/1149605/US/CAREER: High Performance III-V-Bismide Mid-Infrared Semiconductor Lasers/; https://www.nature.com/articles/s41598-019-50349-z; 14077; Eales, T. D., Marko, I. P., Schulz, S., O’Halloran, E., Ghetmiri, S., Du, W., Zhou, Y., Yu, S.-Q., Margetis, J., Tolle, J., O’Reilly, E. P. and Sweeney, S. J. (2019) 'Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration', Scientific Reports, 9(1), 14077. (10pp.) DOI:10.1038/s41598-019-50349-z; 10; Scientific reports; http://hdl.handle.net/10468/8842

19
Academic Journal

File Description: application/pdf

Relation: info:eu-repo/grantAgreement/EC/H2020::MSCA-ITN-ETN/641899/EU/Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics/PROMIS; info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3082/IE/Multiscale Simulation and Analysis of emerging Group IV and III-V Semiconductor Materials and Devices/; info:eu-repo/grantAgreement/RCUK/EPSRC/EP/N018605/1/GB/Novel InSb quantum dots monolithically grown on silicon for low cost mid-infrared light emitting diodes/; 465102; Repiso, E., Broderick, C. A., de la Mata, M., Arkani, R., Lu, Q., Marshall, A. R. J., Molina, S. I., O’Reilly, E. P., Carrington, P. J. and Krier, A. (2019) 'Optical properties of metamorphic type-I InAs1−x Sb x /Al y In1−y As quantum wells grown on GaAs for the mid-infrared spectral range', Journal of Physics D: Applied Physics, 52(46), 465102. (11pp.) doi:10.1088/1361-6463/ab37cf; 11; 46; Journal of Physics D: Applied Physics; http://hdl.handle.net/10468/9291; 52

20
Academic Journal

File Description: text

Relation: https://eprints.gla.ac.uk/298870/1/298870.pdf; Eales, T. D. et al. (2019) Ge1-xSnx alloys: consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration. Scientific Reports , 9, 14077. (doi:10.1038/s41598-019-50349-z ) (PMID:31575881) (PMCID:PMC6773784)