Authors: Piotrowicz, C.^1,2 (AUTHOR) clementine.piotrowicz@cea.fr, Mohamad, B.¹ (AUTHOR), Malbert, N.² (AUTHOR), Bécu, S.¹ (AUTHOR), Ruel, S.¹ (AUTHOR), Le Royer, C.¹ (AUTHOR)

Superior Title: Journal of Applied Physics. 5/7/2024, Vol. 135 Issue 17, p1-11. 11p.

Subject Terms: *METAL oxide semiconductor capacitors, *MODULATION-doped field-effect transistors, *METAL oxide semiconductor field-effect transistors, *GALLIUM nitride, *ELECTRON mobility, *COMPUTER-aided design, *PLASMA etching, *STRAY currents

Authors: Hoshi, Takuya¹ (AUTHOR) takuya.hoshi@ntt.com, Yoshiya, Yuki¹ (AUTHOR), Sugiyama, Hiroki¹ (AUTHOR), Nakajima, Fumito¹ (AUTHOR)

Superior Title: Journal of Applied Physics. 4/14/2024, Vol. 135 Issue 14, p1-7. 7p.

Subject Terms: *MODULATION-doped field-effect transistors, *METAL semiconductor field-effect transistors, *AUDITING standards, *GALLIUM arsenide, *CARRIER density, *ELECTRON mobility, *OHMIC contacts

Authors: Liu, Kai¹ (AUTHOR), Wang, Chong¹ (AUTHOR) chongw@xidian.edu.cn, Zhang, Kuo¹ (AUTHOR), Ma, Xiaohua¹ (AUTHOR), Bai, Junchun¹ (AUTHOR), Zheng, Xuefeng¹ (AUTHOR), Li, Ang¹ (AUTHOR), Hao, Yue¹ (AUTHOR)

Superior Title: Journal of Applied Physics. 4/14/2024, Vol. 135 Issue 14, p1-10. 10p.

Subject Terms: *THRESHOLD voltage, *MODULATION-doped field-effect transistors, *STRAY currents, *GALLIUM nitride, *METALWORK, *FIELD-effect transistors, *SCHOTTKY barrier

Authors: Dai, Yang¹ (AUTHOR) daiyang@nwu.edu.cn, Li, Yukun¹ (AUTHOR), Gao, Leiyu¹ (AUTHOR), Zuo, Jing¹ (AUTHOR), Zhang, Biying¹ (AUTHOR), Chen, Cheng¹ (AUTHOR) cchen@nwu.edu.cn, Wang, Zhongxu² (AUTHOR), Zhao, Wu¹ (AUTHOR)

Superior Title: Journal of Applied Physics. 4/21/2024, Vol. 135 Issue 15, p1-13. 13p.

Subject Terms: *TWO-dimensional electron gas, *MODULATION-doped field-effect transistors, *GALLIUM nitride, *OHMIC contacts, *ELECTRON gas, *MANUFACTURING processes, *TERAHERTZ spectroscopy

Authors: Wang, Kejia¹ (AUTHOR), Wang, Zujun² (AUTHOR), Cao, Rongxing^3,4 (AUTHOR) rxcao@yzu.edu.cn, Liu, Hanxun³ (AUTHOR), Chang, Wenjing¹ (AUTHOR), Zhao, Lin⁵ (AUTHOR), Mei, Bo⁶ (AUTHOR), Lv, He⁶ (AUTHOR), Zeng, Xianghua^1,3 (AUTHOR), Xue, Yuxiong^3,4 (AUTHOR) yxxue@yzu.edu.cn

Superior Title: Journal of Applied Physics. 4/14/2024, Vol. 135 Issue 14, p1-8. 8p.

Subject Terms: *SINGLE event effects, *METAL oxide semiconductor field-effect transistors, *CARRIER density, *ELECTRON density, *COMPUTER-aided design

Authors: Garg, Ankur¹ (AUTHOR) ankurgarg151@gmail.com, Ehteshamuddin, Mohammad¹ (AUTHOR), Sharma, Somit¹ (AUTHOR), Dasgupta, Avirup¹ (AUTHOR) avirup@ece.iitr.ac.in

Superior Title: Journal of Applied Physics. 2/14/2024, Vol. 135 Issue 6, p1-7. 7p.

Subject Terms: *FIELD-effect transistors, *GREEN'S functions, *DENSITY functional theory, *TRANSITION metals, *ELECTRONIC equipment, *METAL oxide semiconductor field-effect transistors

Authors: Jia, Xiaofei¹ (AUTHOR) jiaxiaofei-ab@163.com, Wei, Qun¹ (AUTHOR), Zhang, Wenpeng¹ (AUTHOR), He, Liang² (AUTHOR), Wu, Zhenhua¹ (AUTHOR)

Superior Title: Journal of Applied Physics. 1/21/2024, Vol. 135 Issue 3, p1-7. 7p.

Subject Terms: *METAL oxide semiconductor field-effect transistors, *FIELD-effect transistors, *METAL oxide semiconductor field

Authors: Minghui, Zhang¹ (AUTHOR), Wei, Wang¹ (AUTHOR) wei_wang2014@mail.xjtu.edu.cn, Genqiang, Chen¹ (AUTHOR), Rui, Xie¹ (AUTHOR), Feng, Wen¹ (AUTHOR), Fang, Lin¹ (AUTHOR), Yanfeng, Wang¹ (AUTHOR), Pengfei, Zhang¹ (AUTHOR), Fei, Wang¹ (AUTHOR), Shi, He¹ (AUTHOR), Yuesong, Liang¹ (AUTHOR), Shuwei, Fan¹ (AUTHOR), Kaiyue, Wang² (AUTHOR), Cui, Yu³ (AUTHOR), Tai, Min⁴ (AUTHOR), Hongxing, Wang¹ (AUTHOR)

Superior Title: Journal of Applied Physics. 3/28/2024, Vol. 135 Issue 12, p1-8. 8p.

Subject Terms: *FIELD-effect transistors, *STRAY currents, *INDIUM gallium zinc oxide, *THRESHOLD voltage, *ELECTRON beams, *DIAMONDS

Authors: Woo, Whang Je¹ (AUTHOR), Seo, Seunggi^1,2 (AUTHOR), Yoon, Hwi¹ (AUTHOR), Lee, Sanghun¹ (AUTHOR), Kim, Donghyun¹ (AUTHOR), Park, Seonyeong¹ (AUTHOR), Kim, Youngjun¹ (AUTHOR), Sohn, Inkyu¹ (AUTHOR), Park, JuSang³ (AUTHOR), Chung, Seung-min¹ (AUTHOR) sm.chung@yonsei.ac.kr, Kim, Hyungjun¹ (AUTHOR) hyungjun@yonsei.ac.kr

Superior Title: Journal of Chemical Physics. 3/14/2024, Vol. 160 Issue 10, p1-9. 9p.

Subject Terms: *FIELD-effect transistors, *ATOMIC layer deposition, *METAL insulator semiconductors, *MOLYBDENUM disulfide, *TRANSITION metals

Authors: Poljak, Mirko¹ (AUTHOR) mirko.poljak@fer.hr, Matić, Mislav¹ (AUTHOR), Prevarić, Ivan¹ (AUTHOR), Japec, Karolina¹ (AUTHOR)

Superior Title: Journal of Applied Physics. 2/21/2024, Vol. 135 Issue 7, p1-8. 8p.

Subject Terms: *FIELD-effect transistors, *GREEN'S functions, *QUANTUM confinement effects, *AB-initio calculations, *NANOSTRUCTURED materials, *NANOSATELLITES

Authors: Ricochet Collaboration (AUTHOR), Augier, C.¹ (AUTHOR), Baulieu, G.¹ (AUTHOR), Belov, V.² (AUTHOR), Bergé, L.³ (AUTHOR), Billard, J.¹ (AUTHOR), Bres, G.⁴ (AUTHOR), Bret, J. -. L.⁴ (AUTHOR), Broniatowski, A.³ (AUTHOR), Calvo, M.⁴ (AUTHOR), Cazes, A.¹ (AUTHOR), Chaize, D.¹ (AUTHOR), Chala, M.⁵ (AUTHOR), Chapellier, M.³ (AUTHOR), Chaplinsky, L.⁶ (AUTHOR), Chemin, G.⁵ (AUTHOR), Chen, R.⁷ (AUTHOR), Colas, J.¹ (AUTHOR), Cudmore, E.⁸ (AUTHOR), De Jesus, M.¹ (AUTHOR)

Superior Title: European Physical Journal C -- Particles & Fields. Feb2024, Vol. 84 Issue 2, p1-10. 10p.

Subject Terms: *GERMANIUM detectors, *MODULATION-doped field-effect transistors, *BOLOMETERS, *NUCLEAR energy, *IONIZATION energy, *GERMANIUM, *ELASTIC scattering

Authors: Afzal, Tahmina¹ (AUTHOR), Iqbal, M. Javaid¹ (AUTHOR) javaid.cssp@pu.edu.pk, Almutairi, Badriah S.² (AUTHOR), Zohaib, Muhammad¹ (AUTHOR), Nadeem, Muhammad¹ (AUTHOR), Raza, Mohsin Ali³ (AUTHOR), Naseem, Shahzad¹ (AUTHOR)

Superior Title: Journal of Chemical Physics. 1/21/2024, Vol. 160 Issue 3, p1-9. 9p.

Subject Terms: *ORGANIC semiconductors, *ORGANIC field-effect transistors, *PHASE separation, *CONDUCTING polymers, *MOLECULAR self-assembly, *CHARGE carrier mobility, *ACTIVE biological transport

Authors: Yuan, Qingyu¹ (AUTHOR), Tang, Jinze¹ (AUTHOR), Luan, Xiaodong¹ (AUTHOR), Lin, Xin¹ (AUTHOR), Chang, Fan¹ (AUTHOR), Cheng, Jiali¹ (AUTHOR)

Superior Title: Active & Passive Electronic Components. 11/21/2023, p1-7. 7p.

Subject Terms: MODULATION-doped field-effect transistors, OPEN-circuit voltage, GALLIUM nitride

Authors: Zhu, Jiyuan¹ (AUTHOR), Hu, Shen¹ (AUTHOR) hushen@fudan.edu.cn, Chen, Bojia¹ (AUTHOR), Zhang, Yu¹ (AUTHOR), Wei, Shice¹ (AUTHOR), Guo, Xiangyu¹ (AUTHOR), Zou, Xingli² (AUTHOR) xlzou@shu.edu.cn, Lu, Xionggang² (AUTHOR), Sun, Qingqing¹ (AUTHOR) qqsun@fudan.edu.cn, Zhang, David W.¹ (AUTHOR), Ji, Li^1,3 (AUTHOR) lji@fudan.edu.cn

Superior Title: Journal of Chemical Physics. 11/7/2023, Vol. 159 Issue 17, p1-10. 10p.

Subject Terms: *FIELD-effect transistors, *METAL oxide semiconductor field-effect transistors, *THIN films, *THIN film transistors, *ATOMIC layer deposition, *TRANSISTORS, *CARRIER density

Authors: Rai, Narendra¹ (AUTHOR) narendra.rai1812@gmail.com, Sarkar, Ritam^1,2 (AUTHOR) ritams321@gmail.com, Mahajan, Ashutosh³ (AUTHOR) ashutoshpm@gmail.com, Laha, Apurba¹ (AUTHOR) apurba.laha@gmail.com, Saha, Dipankar¹ (AUTHOR) dsahaiitb@gmail.com, Ganguly, Swaroop¹ (AUTHOR) swaroop.ganguly@gmail.com

Superior Title: Journal of Applied Physics. 12/28/2023, Vol. 134 Issue 24, p1-12. 12p.

Subject Terms: *STRAY currents, *MODULATION-doped field-effect transistors, *ELECTRON traps, *GALLIUM nitride, *ELECTRON emission, *THERMAL electrons, *ELECTRIC fields

Authors: Al-Mamun, Nahid Sultan¹ (AUTHOR), Bae, Joonyup² (AUTHOR), Kim, Jihyun² (AUTHOR), Haque, Aman¹ (AUTHOR) mah37@psu.edu, Wolfe, Douglas E.³ (AUTHOR), Ren, Fan⁴ (AUTHOR), Pearton, Stephen J.⁵ (AUTHOR)

Superior Title: Journal of Applied Physics. 12/14/2023, Vol. 134 Issue 22, p1-10. 10p.

Subject Terms: *MODULATION-doped field-effect transistors, *IRRADIATION, *ELECTRON traps, *GALLIUM nitride, *PROTONS, *CARRIER density, *RADIATION

Authors: Bhatti, Aqyan A.¹ (AUTHOR), Archer, Branch T.¹ (AUTHOR) btarcher@utexas.edu, Navlakha, Nupur¹ (AUTHOR), Register, Leonard F.¹ (AUTHOR) register@austin.utexas.edu, Banerjee, Sanjay K.¹ (AUTHOR) banerjee@ece.utexas.edu

Superior Title: Journal of Applied Physics. 11/28/2023, Vol. 134 Issue 20, p1-13. 13p.

Subject Terms: *METAL oxide semiconductor field-effect transistors, *ELECTRONIC band structure, *MONTE Carlo method, *SEMICLASSICAL limits, *DENSITY functional theory, *SHEAR strain

Authors: Jin, Decarle S.¹ (AUTHOR), Nnaji, Moses O.¹ (AUTHOR), Gezahagne, Hilena F.¹ (AUTHOR), Young, Katherine T.¹ (AUTHOR), Brightbill, Eleanor L.¹ (AUTHOR), Vogel, Eric M.¹ (AUTHOR) eric.vogel@mse.gatech.edu

Superior Title: Journal of Applied Physics. 11/7/2023, Vol. 134 Issue 17, p1-9. 9p.

Subject Terms: *FIELD-effect transistors, *GRAPHENE, *BIOSENSORS, *HYDROXYL group

Authors: Liu, Yang¹ (AUTHOR), Fu, Chen¹ (AUTHOR) juzihongle2004@163.com, Jiang, Guangyuan¹ (AUTHOR), Zhang, Guangyuan¹ (AUTHOR), Yang, Guang¹ (AUTHOR), Lv, Yuanjie² (AUTHOR), Lin, Zhaojun³ (AUTHOR)

Superior Title: Journal of Applied Physics. 10/28/2023, Vol. 134 Issue 16, p1-8. 8p.

Subject Terms: *FIELD-effect transistors, *GALLIUM nitride, *PHONON scattering, *ELECTRON mobility

Authors: Zoino, S.¹ (AUTHOR), Borowik, Ł.¹ (AUTHOR) lukasz.borowik@cea.fr, Mohamad, B.¹ (AUTHOR), Nowak, E.¹ (AUTHOR), Kempisty, P.² (AUTHOR) pkempisty@unipress.waw.pl

Superior Title: Journal of Applied Physics. 10/21/2023, Vol. 134 Issue 15, p1-7. 7p.

Subject Terms: *METAL oxide semiconductor field-effect transistors, *CARRIER gas, *TWO-dimensional electron gas, *GALLIUM nitride, *HETEROSTRUCTURES, *ALUMINUM oxide