Authors: Gao, Ziyao, Hamdaoui, Youssef, Abid, Idriss, Medjdoub, F, Meissner, Elke, Besendörfer, Sven, Heuken, Michael
Contributors: AIXTRON AG, WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Fraunhofer Institute for Integrated Systems and Device Technology (Fraunhofer IISB), Fraunhofer (Fraunhofer-Gesellschaft), PCMP CHOP, Renatech Network, CMNF, European Project: 101007229,H2020,H2020-ECSEL-2020-2-RIA-two-stage,YESvGaN(2021)
Superior Title:
14th International Conference on Nitride Semiconductors (ICNS-14)
https://hal.science/hal-04436407
14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Nagoya, Japan
Subject Terms: [SPI]Engineering Sciences [physics]
Relation: info:eu-repo/grantAgreement//101007229/EU/Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost/YESvGaN; hal-04436407; https://hal.science/hal-04436407; https://hal.science/hal-04436407/document; https://hal.science/hal-04436407/file/ICNS14_Aixtron.pdf
Availability:
https://hal.science/hal-04436407
https://hal.science/hal-04436407/document
https://hal.science/hal-04436407/file/ICNS14_Aixtron.pdf
Contributors: WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), SILTRONIC AG, This project has received funding from the ECSEL Joint Undertaking (JU) under grant agreement No 101007229., Renatech Network, CMNF, European Project: 101007229,H2020,H2020-ECSEL-2020-2-RIA-two-stage,YESvGaN(2021)
Superior Title: Proceeding of CSW2023 ; Compound semiconductor week 2023 ; https://hal.science/hal-04436387 ; Compound semiconductor week 2023, May 2023, Jeju, South Korea
Subject Terms: Wide band gap semiconductor GaN-on-Si Vertical power devices, Wide band gap semiconductor, GaN-on-Si, Vertical power devices, [SPI]Engineering Sciences [physics]
Subject Geographic: Jeju, South Korea
Relation: info:eu-repo/grantAgreement//101007229/EU/Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost/YESvGaN; hal-04436387; https://hal.science/hal-04436387; https://hal.science/hal-04436387/document; https://hal.science/hal-04436387/file/CSW-2023_Abstract_IEMN-Siltronic.pdf
Availability:
https://hal.science/hal-04436387
https://hal.science/hal-04436387/document
https://hal.science/hal-04436387/file/CSW-2023_Abstract_IEMN-Siltronic.pdf
Contributors: WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), SILTRONIC AG, This project has received funding from the ECSEL Joint Undertaking (JU) under grant agreement No 101007229. The JU receives support from the European Union’s Horizon 2020 research & innovation programme and Germany, France, Belgium, Austria, Sweden, Spain, Italy. This work was also supported by the French RENATECH Network, Renatech Network, CMNF, European Project: 101007229,H2020,H2020-ECSEL-2020-2-RIA-two-stage,YESvGaN(2021)
Superior Title: ISSN: 1882-0786 ; Applied Physics Express ; https://hal.science/hal-04313786 ; Applied Physics Express, In press, ⟨10.35848/1882-0786/ad106c⟩.
Subject Terms: [SPI]Engineering Sciences [physics]
Relation: info:eu-repo/grantAgreement//101007229/EU/Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost/YESvGaN; hal-04313786; https://hal.science/hal-04313786; https://hal.science/hal-04313786/document; https://hal.science/hal-04313786/file/Hamdaoui%2Bet%2Bal_2023_Appl._Phys._Express_10.35848_1882-0786_ad106c.pdf
Authors: Mehta, Jash, Abid, Idriss, Bassaler, Julien, Pernot, Julien, Ferrandis, Philippe, Nemoz, M, Cordier, Yvon, Rennesson, S, Tamariz, S, Semond, F, Medjdoub, F
Contributors: WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Semi-conducteurs à large bande interdite (NEEL - SC2G), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Université de Toulon (UTLN), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), EasyGaN, partially supported by the French RENATECH network, Renatech Network, CMNF, ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), ANR-22-CE05-0028,ACTION,Nouveau transistors à canaux AlGaN pour les applications à haute tension(2022)
Superior Title: ISSN: 2772-6711 ; e-Prime – Advances in Electrical Engineering, Electronics and Energy ; https://hal.science/hal-03952273 ; e-Prime – Advances in Electrical Engineering, Electronics and Energy, 2023, 3, pp.100114. ⟨10.1016/j.prime.2023.100114⟩.
Relation: hal-03952273; https://hal.science/hal-03952273; https://hal.science/hal-03952273/document; https://hal.science/hal-03952273/file/1-s2.0-S2772671123000098-main.pdf
Authors: Mehta, J., Abid, Idriss, Elwaradi, Reda, Cordier, Yvon, Medjdoub, F
Contributors: WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Université Côte d'Azur (UCA), Author would like to thank T.H. Ngo for the AFM measurements and M. Nemoz for XRD scans. This work was supported by the French RENATECH Network, the “Investissements d'Avenir” Program GaNeX (ANR-11-LABX-0014) as well as part of project ACTION (ANR-22-CE05-0028)., Renatech Network, CMNF, ANR-22-CE05-0028,ACTION,Nouveau transistors à canaux AlGaN pour les applications à haute tension(2022), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011)
Superior Title: ISSN: 2772-6711 ; e-Prime – Advances in Electrical Engineering, Electronics and Energy ; https://hal.science/hal-04194891 ; e-Prime – Advances in Electrical Engineering, Electronics and Energy, 2023, 5, pp.100263. ⟨10.1016/j.prime.2023.100263⟩.
Subject Terms: HFET, AlGaN, UWBG, High Voltage Power Electronics, AlN, HEMT, [SPI.TRON]Engineering Sciences [physics]/Electronics
Relation: hal-04194891; https://hal.science/hal-04194891; https://hal.science/hal-04194891/document; https://hal.science/hal-04194891/file/Mehta_2023_e-Prime_1-s2.0-S2772671123001584-main.pdf
Authors: Mehta, Jash, Abid, Idriss, Bassaler, Julien, Pernot, Julien, Ferrandis, Philippe, Rennesson, Stephanie, Ngo, T.H., Nemoz, Maud, Tamariz, Sébastian, Cordier, Yvon, Semond, Fabrice, Medjdoub, F
Contributors: WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Semi-conducteurs à large bande interdite (NEEL - SC2G), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Université de Toulon (UTLN), EasyGaN, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), This work was supported by the French RENATECH network, the French National grant ANR-11-LABX-0014 called GaNeX, Renatech Network, ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011)
Superior Title: Towards high buffer breakdown field and high temperature stabilityAlGaN channel HEMTs on silicon substrate 2022 ; Compound Semiconductor Week, CSW 2022 ; https://hal.science/hal-03828829 ; Compound Semiconductor Week, CSW 2022, Jun 2022, Ann Arbor, MI, United States. 2 p
Subject Terms: [SPI]Engineering Sciences [physics]
Subject Geographic: Ann Arbor, MI, United States
Relation: hal-03828829; https://hal.science/hal-03828829; https://hal.science/hal-03828829/document; https://hal.science/hal-03828829/file/CSW-22_abstract__final.pdf
Availability:
https://hal.science/hal-03828829
https://hal.science/hal-03828829/document
https://hal.science/hal-03828829/file/CSW-22_abstract__final.pdf
Authors: Mehta, Jash, Abid, Idriss, Elwaradi, Reda, Cordier, Yvon, Medjdoub, F
Contributors: WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Renatech Network, CMNF, ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011)
Superior Title: Proceeding of IWN2022 ; International Workshop on Nitride Semiconductors, IWN 2022 ; https://hal.science/hal-03829060 ; International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany
Subject Terms: [SPI]Engineering Sciences [physics]
Relation: hal-03829060; https://hal.science/hal-03829060; https://hal.science/hal-03829060/document; https://hal.science/hal-03829060/file/abstract_IWN_vfinal.pdf
Availability:
https://hal.science/hal-03829060
https://hal.science/hal-03829060/document
https://hal.science/hal-03829060/file/abstract_IWN_vfinal.pdf
Authors: Hamdaoui, Youssef, Abid, Idriss, Ziouche, Katir, Medjdoub, F
Contributors: WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), This project has received funding from the ECSEL Joint Undertaking (JU) under grant agreement No 101007229. The JU receives support from the European Union’s Horizon 2020 research and innovation programme and Germany, France, Belgium, Austria, Sweden, Spain, Italy., Renatech Network, CMNF, European Project: 101007229,H2020,H2020-ECSEL-2020-2-RIA-two-stage,YESvGaN(2021)
Superior Title: Proceeding of TWHM2022 ; 14th Topical Workshop on Heterostructure Microelectronics (TWHM) 2022 ; https://hal.science/hal-03828927 ; 14th Topical Workshop on Heterostructure Microelectronics (TWHM) 2022, Aug 2022, Hiroshima, Japan ; https://www.rciqe.hokudai.ac.jp/twhm2022/
Subject Terms: [SPI]Engineering Sciences [physics]
Relation: info:eu-repo/grantAgreement//101007229/EU/Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost/YESvGaN; hal-03828927; https://hal.science/hal-03828927; https://hal.science/hal-03828927/document; https://hal.science/hal-03828927/file/Abstract_TWHM_Medjdoub.pdf
Availability:
https://hal.science/hal-03828927
https://hal.science/hal-03828927/document
https://hal.science/hal-03828927/file/Abstract_TWHM_Medjdoub.pdf
Authors: Hamdaoui, Youssef, Abid, Idriss, Ziouche, Katir, Medjdoub, F
Contributors: WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), This project has received funding from the ECSEL Joint Undertaking (JU) under grant agreement No 101007229. The JU receives support from the European Union’s Horizon 2020 research and innovation programme and Germany, France, Belgium, Austria, Sweden, Spain, Italy., Renatech Network, CMNF, European Project: 101007229,H2020,H2020-ECSEL-2020-2-RIA-two-stage,YESvGaN(2021)
Superior Title: Proceeding of TWHM2022 ; 14th Topical Workshop on Heterostructure Microelectronics (TWHM) 2022 ; https://hal.science/hal-03828927 ; 14th Topical Workshop on Heterostructure Microelectronics (TWHM) 2022, Aug 2022, Hiroshima, Japan ; https://www.rciqe.hokudai.ac.jp/twhm2022/
Subject Terms: [SPI]Engineering Sciences [physics]
Relation: info:eu-repo/grantAgreement//101007229/EU/Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost/YESvGaN; hal-03828927; https://hal.science/hal-03828927; https://hal.science/hal-03828927/document; https://hal.science/hal-03828927/file/Abstract_TWHM_Medjdoub.pdf
Availability:
https://hal.science/hal-03828927
https://hal.science/hal-03828927/document
https://hal.science/hal-03828927/file/Abstract_TWHM_Medjdoub.pdf
Authors: Abid, Idriss, Hamdaoui, Youssef, Mehta, Jash, Derluyn, Joff, Medjdoub, Farid
Contributors: WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), This research was funded by the European Union’s Horizon 2020 research and innovation program (grant agreement no. 720527), Innovative Reliable Nitride-Based Power Devices (Inrel-NPower), and the ANR-11-LABX-0014 within the national network GaNeX. This work was supported by the French RENATECH national network., Renatech Network, CMNF, ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), European Project: 720527,H2020,H2020-NMBP-2016-two-stage,InRel-NPower(2017)
Superior Title: ISSN: 2072-666X ; Micromachines ; https://hal.science/hal-03777891 ; Micromachines, 2022, III–V Compound Semiconductors and Devices, 13 (9), pp.1519. ⟨10.3390/mi13091519⟩.
Subject Terms: high-electron-mobility transistor (HEMT), GaN, normally off, [SPI.TRON]Engineering Sciences [physics]/Electronics
Relation: info:eu-repo/grantAgreement//720527/EU/Innovative Reliable Nitride-based Power Devices/InRel-NPower; hal-03777891; https://hal.science/hal-03777891; https://hal.science/hal-03777891/document; https://hal.science/hal-03777891/file/Abid2022_micromachines-13-01519-1.pdf
Authors: Mehta, Jash, Abid, Idriss, Ngo, Thi Huong, Cordier, Yvon, Medjdoub, F
Contributors: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), This work was supported by the French RENATECH network, the French National grant ANR-17-CE05-00131 project called BREAKUP and the ANR-11-LABX-0014 within the national network GaNeX., Renatech Network, ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), ANR-17-CE05-0013,BREAkuP,Matériaux à ultra large bande interdite pour les futurs applications d'électronique de puissance(2017)
Superior Title:
44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE2021
https://hal.science/hal-03279160
44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE2021, Jun 2021, Bristol (virtual), United Kingdom
Subject Terms: [SPI]Engineering Sciences [physics]
Subject Geographic: Bristol (virtual), United Kingdom
Time: Bristol (virtual), United Kingdom
Relation: hal-03279160; https://hal.science/hal-03279160; https://hal.science/hal-03279160/document; https://hal.science/hal-03279160/file/Mehta_VF_template_WOCSDICE2021.pdf
Availability:
https://hal.science/hal-03279160
https://hal.science/hal-03279160/document
https://hal.science/hal-03279160/file/Mehta_VF_template_WOCSDICE2021.pdf
Authors: Abid, Idriss, Kabouche, Riad, Medjdoub, F, Besendörfer, Sven, Meissner, Elke, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Miyake, Hideto
Contributors: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Fraunhofer Institute for Integrated Systems and Device Technology (Fraunhofer IISB), Fraunhofer (Fraunhofer-Gesellschaft), Mie University, PCMP CHOP, ANR-17-CE05-0013,BREAkuP,Matériaux à ultra large bande interdite pour les futurs applications d'électronique de puissance(2017)
Superior Title:
32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD 2020)
https://hal.science/hal-03044195
32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD 2020), Sep 2020, Vienne, Austria. pp.310-312, ⟨10.1109/ISPSD46842.2020.9170170⟩
Subject Terms: AlGaN channel, High-Electron-Mobility Transistor (HEMT), Ultra-Wide Band Gap, AlN, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Relation: hal-03044195; https://hal.science/hal-03044195; https://hal.science/hal-03044195/document; https://hal.science/hal-03044195/file/ispsd-2020-paper%202115.pdf
Authors: Meneghini, Matteo, de Santi, Carlo, Abid, Idriss, Buffolo, Matteo, Cioni, Marcello, Khadar, Riyaz, Abdul, Nela, Luca, Zagni, Nicolò, Chini, Alessandro, Medjdoub, F, Meneghesso, Gaudenzio, Verzellesi, Giovanni, Zanoni, Enrico, Matioli, Elison
Contributors: Università degli Studi di Padova = University of Padua (Unipd), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Università degli Studi di Modena e Reggio Emilia = University of Modena and Reggio Emilia (UNIMORE), Ecole Polytechnique Fédérale de Lausanne (EPFL), This activity received funding partially from the ECSEL Joint Undertaking (JU) under Grant Agreement No 826392, UltimateGaN. The JU receives support from the European Union's Horizon 2020 Research and Innovation Programme and Austria, Belgium, Germany, Italy, Slovakia, Spain, Sweden, Norway, and Switzerland. This project was co-funded by the Ministry of Education, Universities and Research, in Italy. This activity also received funding partially from the ECSEL Joint Undertaking (JU) through the iRel40 Project. iRel40 is a European co-funded innovation project that has been granted by the ECSEL Joint Undertaking (JU) under Grant Agreement No. 876659. The funding of the project comes from the Horizon 2020 Research Programme and participating countries. National funding was provided by Germany, including the Free States of Saxony and Thuringia, Austria, Belgium, Finland, France, Italy, the Netherlands, Slovakia, Spain, Sweden, and Turkey. This project was co-funded by the Ministry of Economic Development in Italy. This work has received funding partially from the ECSEL Joint Undertaking (JU) within the YESvGaN Project under Grant Agreement No. 101007229. The JU receives support from the European Union's Horizon 2020 Research and Innovation Programme and Germany, France, Belgium, Austria, Sweden, Spain, and Italy. This project is co-funded by the Ministry of Education, Universities and Research in Italy., PCMP CHOP, Renatech Network, European Project: 101007229,H2020,H2020-ECSEL-2020-2-RIA-two-stage,YESvGaN(2021)
Superior Title: ISSN: 0021-8979.
Subject Terms: [SPI.TRON]Engineering Sciences [physics]/Electronics
Relation: info:eu-repo/grantAgreement//101007229/EU/Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost/YESvGaN; hal-03421528; https://hal.science/hal-03421528; https://hal.science/hal-03421528/document; https://hal.science/hal-03421528/file/JAP%20Tutorial%20HEMT%20FINAL.pdf; WOS: 000762647900003
Authors: Abid, Idriss, Mehta, Jash, Cordier, Yvon, Derluyn, Joff, Degroote, Stefan, Miyake, Hideto, Medjdoub, F
Contributors: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), SOITEC, WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), H.M. is partially supported by JSPS KAKENHI Grants (JP16H06415) and JST SICORP-EU (JPMJSC1608)., Renatech Network, PCMP CHOP, ANR-17-CE05-0013,BREAkuP,Matériaux à ultra large bande interdite pour les futurs applications d'électronique de puissance(2017), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), European Project: 720527,H2020,H2020-NMBP-2016-two-stage,InRel-NPower(2017)
Superior Title: ISSN: 2079-9292 ; Electronics ; https://hal.science/hal-03164517 ; Electronics, 2021, 10 (6), pp.635. ⟨10.3390/electronics10060635⟩.
Subject Terms: Ultra-wide BandGap, HEMTs transistors, [SPI]Engineering Sciences [physics]
Relation: info:eu-repo/grantAgreement//720527/EU/Innovative Reliable Nitride-based Power Devices/InRel-NPower; hal-03164517; https://hal.science/hal-03164517; https://hal.science/hal-03164517/document; https://hal.science/hal-03164517/file/electronics-10-00635.pdf
Authors: Abid, Idriss, Canato, Eleonora, Meneghini, Matteo, Meneghesso, Gaudenzio, Cheng, Kai, Medjdoub, F
Contributors: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Università degli Studi di Padova = University of Padua (Unipd), WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), InRel-NPower, BREAkuP, Renatech Network, PCMP CHOP, ANR-17-CE05-0013,BREAkuP,Matériaux à ultra large bande interdite pour les futurs applications d'électronique de puissance(2017), European Project: 720527,H2020,H2020-NMBP-2016-two-stage,InRel-NPower(2017)
Superior Title: ISSN: 1882-0786 ; Applied Physics Express ; https://hal.science/hal-03113165 ; Applied Physics Express, 2021, 14 (3), pp.036501. ⟨10.35848/1882-0786/abdca0⟩.
Subject Terms: [SPI]Engineering Sciences [physics]
Relation: info:eu-repo/grantAgreement//720527/EU/Innovative Reliable Nitride-based Power Devices/InRel-NPower; hal-03113165; https://hal.science/hal-03113165; https://hal.science/hal-03113165/document; https://hal.science/hal-03113165/file/Abid_2021_Appl._Phys._Express_14_036501.pdf
Contributors: WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), SILTRONIC AG, PCMP CHOP, RENATECH network, European Project: 101007229,H2020,H2020-ECSEL-2020-2-RIA-two-stage,YESvGaN(2021)
Superior Title:
14th International Conference on Nitride Semiconductors (ICNS-14)
https://hal.science/hal-04436413
14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Nagoya, Japan
Subject Terms: [SPI]Engineering Sciences [physics]
Relation: info:eu-repo/grantAgreement//101007229/EU/Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost/YESvGaN; hal-04436413; https://hal.science/hal-04436413
Availability: https://hal.science/hal-04436413
Authors: Borga, Matteo, Meneghini, Matteo, Benazzi, Davide, Canato, Eleonora, Püsche, Roland, Derluyn, Joff, Abid, Idriss, Medjdoub, F, Meneghesso, Gaudenzio, Zanoni, Enrico
Contributors: Department of Information Engineering Padova (DEI), Università degli Studi di Padova = University of Padua (Unipd), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)
Superior Title:
2019 ESREF proceeding
30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
https://hal.science/hal-03048194
30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2019, Toulouse, France
Subject Terms: [SPI]Engineering Sciences [physics]
Relation: hal-03048194; https://hal.science/hal-03048194; https://hal.science/hal-03048194/document; https://hal.science/hal-03048194/file/ESREF_2019_Borga_rev3.pdf
Availability:
https://hal.science/hal-03048194
https://hal.science/hal-03048194/document
https://hal.science/hal-03048194/file/ESREF_2019_Borga_rev3.pdf
Authors: Kabouche, Riad, Abid, Idriss, Zegaoui, Malek, Cheng, Kai, Medjdoub, F
Contributors: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)
Superior Title:
2019 CS MANTECH proceeding
International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019
https://hal.science/hal-02356891
International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Apr 2019, Minneapolis, United States
Subject Terms: GaN power devices, trapping, high voltage, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Subject Geographic: Minneapolis, United States
Relation: hal-02356891; https://hal.science/hal-02356891; https://hal.science/hal-02356891/document; https://hal.science/hal-02356891/file/2019_CS_MANTECH_Medjdoub_final.pdf
Availability:
https://hal.science/hal-02356891
https://hal.science/hal-02356891/document
https://hal.science/hal-02356891/file/2019_CS_MANTECH_Medjdoub_final.pdf
Authors: Abid, Idriss, Kabouche, Riad, Zegaoui, Malek, Bougerol, C., Comyn, Rémi, Cordier, Yvon, Medjdoub, F
Contributors: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 )-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 ), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UniCA), WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)
Superior Title:
2019 WOCSDICE proceeding
43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019
https://hal.science/hal-02356886
43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France
Relation: hal-02356886; https://hal.science/hal-02356886; https://hal.science/hal-02356886/document; https://hal.science/hal-02356886/file/wocsdice_final.pdf
Availability:
https://hal.science/hal-02356886
https://hal.science/hal-02356886/document
https://hal.science/hal-02356886/file/wocsdice_final.pdf
Authors: Borga, Matteo, Meneghini, Matteo, Benazzi, Davide, Püsche, Roland, Derluyn, Joff, Abid, Idriss, Medjdoub, F, Meneghesso, Gaudenzio, Zanoni, Enrico
Contributors: Università degli Studi di Padova = University of Padua (Unipd), Dipartimento di Ingegneria de l'Informazione Padova (DEI), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)
Superior Title:
2019 WOCSDICE proceeding
43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019
https://hal.science/hal-02356883
43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, cabourg, France
Relation: hal-02356883; https://hal.science/hal-02356883; https://hal.science/hal-02356883/document; https://hal.science/hal-02356883/file/WOCSDICE2019_Borga.pdf
Availability:
https://hal.science/hal-02356883
https://hal.science/hal-02356883/document
https://hal.science/hal-02356883/file/WOCSDICE2019_Borga.pdf