Authors: Fukata, Naoki^1,2 (AUTHOR) FUKATA.Naoki@nims.go.jp, Jevasuwan, Wipakorn¹ (AUTHOR)

Superior Title: Nanotechnology. 3/18/2024, Vol. 35 Issue 12, p1-14. 14p.

Subject Terms: *NANOWIRES, *SEMICONDUCTOR nanowires, *GROUP formation, *SEMICONDUCTOR devices, *HETEROJUNCTIONS, *PROBLEM solving, *TRANSISTORS

Authors: Cerdeira, Antonio¹ (AUTHOR), Estrada, Magali¹ (AUTHOR), de Souza, Michelly² (AUTHOR), Pavanello, Marcelo A.² (AUTHOR) pavanello@fei.edu.br

Superior Title: International Journal of Numerical Modelling. Mar2024, Vol. 37 Issue 2, p1-12. 12p.

Subject Terms: *SILICON nanowires, *TRANSISTORS, *CARRIER density, *CHARGE carrier mobility, *PHYSICAL constants, *METAL oxide semiconductor field-effect transistors

Authors: Lee, Dong-Hee¹ (AUTHOR) zpsxlzje@naver.com, Kim, Hwi-Su¹ (AUTHOR) hwisu0811@naver.com, Park, Ki-Woong¹ (AUTHOR) wwoong97@naver.com, Park, Hamin² (AUTHOR) parkhamin@kw.ac.kr, Cho, Won-Ju¹ (AUTHOR) chowj@kw.ac.kr

Superior Title: Biomimetics (2313-7673). Sep2023, Vol. 8 Issue 5, p432. 12p.

Subject Terms: *NANOWIRES, *EXCITATORY postsynaptic potential, *PATTERN recognition systems, *TRANSISTORS, *ARTIFICIAL neural networks, *SEMICONDUCTOR technology, *SILICON nanowires, *CHITOSAN

Authors: Ajitha, D.¹ (AUTHOR) ajithavijay1@gmail.com, Vijaya Lakshmi, K. N. V. S.² (AUTHOR) vijji.chinnu@gmail.com, Bhagya Lakshmi, K.³ (AUTHOR) bhagyaelectronics701@gmail.com

Superior Title: IETE Journal of Research. Aug2023, Vol. 69 Issue 8, p5549-5565. 17p.

Subject Terms: *NANOWIRE devices, *DIGITAL electronics, *COMPLEMENTARY metal oxide semiconductors, *NANOWIRES, *DIGITAL technology, *MOORE'S law, *TRANSISTORS

Authors: Ratschinski, Ingmar¹ (AUTHOR), Nagarajan, Soundarya² (AUTHOR), Trommer, Jens² (AUTHOR), Luferau, Andrei³ (AUTHOR), Khan, Muhammad Bilal³ (AUTHOR), Erbe, Artur³ (AUTHOR), Georgiev, Yordan M.^3,4 (AUTHOR), Mikolajick, Thomas^2,5 (AUTHOR), Smith, Sean C.⁶ (AUTHOR), König, Dirk⁶ (AUTHOR), Hiller, Daniel^1,7 (AUTHOR) daniel.hiller@physik.tu-freiberg.de

Superior Title: Physica Status Solidi. A: Applications & Materials Science. Jul2023, Vol. 220 Issue 13, p1-6. 6p.

Subject Terms: *SILICON nanowires, *DOPING agents (Chemistry), *NANOSTRUCTURED materials, *SEMICONDUCTORS, *TRANSISTORS, *BREAKDOWN voltage

Authors: Bonaldo, Stefano¹ stefano.bonaldo@dei.unipd.it, Gorchichko, Mariia², Zhang, En Xia², Ma, Teng¹, Mattiazzo, Serena¹, Bagatin, Marta¹, Paccagnella, Alessandro¹, Gerardin, Simone¹, Schrimpf, Ronald D.², Reed, Robert A.², Linten, Dimitri³, Mitard, Jerome³, Fleetwood, Daniel M.²

Superior Title: IEEE Transactions on Nuclear Science. Jul2022, Vol. 69 Issue 7, p1444-1452. 9p.

Subject Terms: TRANSISTORS, NANOWIRES, SILICON nanowires, DIELECTRICS, STRAY currents, THRESHOLD voltage, LOGIC circuits

Authors: Huan, Qingchang, Ma, Ruoyan, Zhang, Xingyu, Feng, Zhongpei, Li, Yangmu, Xiong, Jiamin, Huang, Jia, Li, Hao, Peng, Wei, Zhang, Xiaofu, You, Lixing

Superior Title: Applied Physics Letters; 3/25/2024, Vol. 124 Issue 13, p1-5, 5p

Subject Terms: ELECTRIC properties, VOLTAGE, ELECTRIC charge, STRAY currents, ELECTRIC fields, NANOWIRES, SILICON nanowires, TRANSISTORS

Authors: Mallem, Siva Pratap Reddy¹ (AUTHOR) drmspreddy@kumoh.ac.kr, Puneetha, Peddathimula² (AUTHOR) puneethaphd@gmail.com, Choi, Yeojin³ (AUTHOR) dota23@kumoh.ac.kr, Baek, Seung Mun³ (AUTHOR) monndal980@kumoh.ac.kr, An, Sung Jin³ (AUTHOR) sungjinan@kumoh.ac.kr, Im, Ki-Sik⁴ (AUTHOR) sungjinan@kumoh.ac.kr

Superior Title: Nanomaterials (2079-4991). May2023, Vol. 13 Issue 10, p1629. 8p.

Subject Terms: *NANOWIRES, *GALLIUM nitride, *NANOELECTROMECHANICAL systems, *TRANSISTORS, *THRESHOLD voltage, *PHONON scattering

Authors: Gundu, Anil Kumar¹ akgundu@connect.ust.hk, Kursun, Volkan²

Superior Title: IEEE Transactions on Electron Devices. Mar2022, Vol. 69 Issue 3, p922-929. 8p.

Subject Terms: SILICON nanowires, NANOSTRUCTURED materials, STRAY currents, NANOELECTROMECHANICAL systems, TRANSISTORS, NANOWIRES

Authors: Chen, Zhifeng, Zhang, Yuyan, Jiang, Jianhua, Chen, Chengying

Superior Title: Electronics (2079-9292); Feb2024, Vol. 13 Issue 3, p620, 12p

Subject Terms: CARBON nanotube field effect transistors, TRANSISTORS, THRESHOLD voltage, ANALOG integrated circuits, NANOWIRES

Authors: Wong, Hei¹ (AUTHOR) heiwong@ieee.org, Kakushima, Kuniyuki² (AUTHOR)

Superior Title: Nanomaterials (2079-4991). Feb2023, Vol. 13 Issue 3, p411. 11p.

Subject Terms: *SILICON nanowires, *TRANSISTORS, *CURRENT-voltage characteristics, *ELECTRONIC equipment, *HIGH temperatures, *DIELECTRICS

Authors: Noei, Maziar¹ mn@ithe.rwth-aachen.de, Linn, Tobias¹, Luckner, Paul¹, Jungemann, Christoph¹

Superior Title: IEEE Transactions on Electron Devices. Nov2021, Vol. 68 Issue 11, p5407-5413. 7p.

Subject Terms: BOLTZMANN'S equation, NANOWIRES, TRANSISTORS, SILICON nanowires, PHASE space, SCHRODINGER equation, METAL oxide semiconductor field-effect transistors

Authors: Mallem, Siva Pratap Reddy, Puneetha, Peddathimula, Choi, Yeojin, Baek, Seung Mun, Lee, Dong-Yeon, Im, Ki-Sik, An, Sung Jin

Superior Title: Nanomaterials (2079-4991); Dec2023, Vol. 13 Issue 24, p3159, 9p

Subject Terms: GALLIUM nitride, SEMICONDUCTOR junctions, NANOELECTROMECHANICAL systems, NANOWIRES, TRANSISTORS, SEMICONDUCTOR nanowires, GAUSSIAN distribution

Authors: Zhuang, Xinming, Sa, Zixu, Zhang, Jie, Wang, Mingxu, Xu, Mingsheng, Liu, Fengjing, Song, Kepeng, He, Tao, Chen, Feng, Yang, Zai‐xing

Superior Title: Advanced Science; 11/3/2023, Vol. 10 Issue 31, p1-9, 9p

Subject Terms: ARTIFICIAL neural networks, TRANSISTORS, NANOWIRES, METAL oxide semiconductor field-effect transistors, SILICON nanowires, INTEGRATED circuits, OXIDES

Authors: Li, Wenxuan

Superior Title: AIP Conference Proceedings; 2023, Vol. 3017 Issue 1, p1-6, 6p

Subject Terms: METAL oxide semiconductor field-effect transistors, FIELD-effect transistors, NANOWIRES, TRANSISTORS, PROBLEM solving, ELECTRONIC equipment

Authors: Dixit, Ankit¹, Samajdar, Dip Prakash¹ dipprakash010@gmail.com, Bagga, Navjeet¹

Superior Title: IEEE Transactions on Electron Devices. Jan2022, Vol. 69 Issue 1, p388-394. 7p.

Subject Terms: *AUDITING standards, NANOWIRES, PINK noise, TRANSISTORS, THRESHOLD voltage, GALLIUM arsenide

Authors: Sun, Bin¹ (AUTHOR) sun@iht.rwth-aachen.de, Richstein, Benjamin¹ (AUTHOR), Liebisch, Patrick¹ (AUTHOR), Frahm, Thorben¹ (AUTHOR), Scholz, Stefan¹ (AUTHOR), Trommer, Jens² (AUTHOR), Mikolajick, Thomas² (AUTHOR), Knoch, Joachim¹ (AUTHOR) knoch@iht.rwth-aachen.de

Superior Title: IEEE Transactions on Electron Devices. Jul2021, Vol. 68 Issue 7, p3684-3689. 6p.

Subject Terms: SILICON nanowires, METAL oxide semiconductor field-effect transistors, FIELD-effect transistors, TRANSISTORS, NANOWIRES, GREEN'S functions, SCHOTTKY barrier

Authors: Gorchichko, Mariia¹ mariia.gorchichko@vanderbilt.edu, Zhang, En Xia¹ enxia.zhang@vanderbilt.edu, Wang, Pan¹ panwang134@gmail.com, Bonaldo, Stefano² stefano.bonaldo@dei.unipd.it, Schrimpf, Ronald D.¹ ron.schrimpf@vanderbilt.edu, Reed, Robert A.¹ robert.reed@vanderbilt.edu, Linten, Dimitri³ dimitri.linten@imec.be, Mitard, Jerome³ jerome.mitard@imec.be, Fleetwood, Daniel M.¹ dan.fleetwood@vanderbilt.edu

Superior Title: IEEE Transactions on Nuclear Science. May2021, Vol. 68 Issue 5, p687-696. 10p.

Subject Terms: STRAY currents, NANOWIRES, RANDOM noise theory, TRANSISTORS, SILICON nanowires, THRESHOLD voltage

Authors: Lee, Dong-Hee, Park, Hamin, Cho, Won-Ju

Superior Title: Gels (2310-2861); Dec2023, Vol. 9 Issue 12, p931, 12p

Subject Terms: NANOWIRES, TRANSISTORS, ENERGY consumption, ZINC oxide, BIOCOMPATIBILITY, ARTIFICIAL neural networks

Authors: Mallem, Siva Pratap Reddy, Puneetha, Peddathimula, Lee, Dong-Yeon, Kim, Yoonkap, Kim, Han-Jung, Im, Ki-Sik, An, Sung-Jin

Superior Title: Nanomaterials (2079-4991); Jul2023, Vol. 13 Issue 14, p2132, 9p

Subject Terms: GALLIUM nitride, TRANSISTORS, NANOWIRES, NOISE measurement, MODULATION-doped field-effect transistors, SILICON nanowires