Authors: Gorshkov, D. V.¹ (AUTHOR) GorshkovDV@isp.nsc.ru, Sidorov, G. Yu.¹ (AUTHOR), Sabinina, I. V.¹ (AUTHOR), Sidorov, Yu. G.¹ (AUTHOR), Marin, D. V.¹ (AUTHOR), Yakushev, M. V.¹ (AUTHOR)

Superior Title: Technical Physics Letters. Aug2020, Vol. 46 Issue 8, p741-744. 4p.

Subject Terms: *ATOMIC layer deposition, *MOLECULAR beam epitaxy, *TEMPERATURE effect, *METALLIC thin films

Authors: Sobolev, M. M., Soldatenkov, F. Y., Danil'chenko, V. G.

Superior Title: Journal of Applied Physics; 9/7/2020, Vol. 128 Issue 9, p1-6, 6p

Subject Terms: PIN diodes, DEEP level transient spectroscopy, TEMPERATURE effect, EPITAXIAL layers, GALLIUM alloys, MOLECULAR beam epitaxy, ELECTRON capture

Authors: Mizerov, A.¹ mizerov@beam.ioffe.ru, Kladko, P.¹, Nikitina, E.¹, Egorov, A.¹

Superior Title: Semiconductors. Feb2015, Vol. 49 Issue 2, p274-277. 4p.

Subject Terms: *ALUMINUM nitride, *MOLECULAR beam epitaxy, *PLASMA gases, *SUBSTRATES (Materials science), *SILICON compounds, *TEMPERATURE effect, *NITROGEN compounds

Authors: Bouravleuv, A. Bour@mail.ioffe.ru, Cirlin, G., Romanov, V.¹, Bagraev, N., Brilinskaya, E.¹, Lebedeva, N.², Novikov, S.², Lipsanen, H.², Dubrovskii, V.

Superior Title: Semiconductors. Feb2012, Vol. 46 Issue 2, p179-183. 5p.

Subject Terms: *NANOWIRES, *MOLECULAR beam epitaxy, *MAGNETIC properties, *PHASE transitions, *TEMPERATURE effect, *CRYSTAL growth, *PARAMAGNETISM

Authors: Galiana, N.¹, Martin, P.¹, Garzón, L.², Rodríguez-Cañas, E.¹, Munuera, C., Esteban-Betegón, F.¹, Varela, M.³, Ocal, C.², Alonso, M.¹, Ruiz, A.¹ anaruiz@icmm.csic.es

Superior Title: Applied Physics A: Materials Science & Processing. Mar2011, Vol. 102 Issue 3, p731-738. 8p.

Subject Terms: *NANOSTRUCTURES, *MOLECULAR beam epitaxy, *SILICON oxide films, *HOMOEPITAXY, *SEMICONDUCTORS, *THICKNESS measurement, *TEMPERATURE effect

Authors: Loke, Wan Khai¹ (AUTHOR) elelwk@nus.edu.sg, Tan, Kian Hua¹ (AUTHOR), Wicaksono, Satrio¹ (AUTHOR), Yoon, Soon Fatt¹ (AUTHOR)

Superior Title: Materials Science & Engineering: B. Aug2023, Vol. 294, pN.PAG-N.PAG. 1p.

Subject Terms: *MOLECULAR beam epitaxy, *SURFACE morphology, *TEMPERATURE effect, *LOW temperatures

Authors: Tyagi, Prashant^1,2, Ramesh, Ch.^1,2, Kushvaha, S.S.^1,2, Senthil Kumar, M.^1,2 senthilmk@nplindia.org

Superior Title: Materials Science in Semiconductor Processing. Jan2019, Vol. 89, p143-148. 6p.

Subject Terms: *ALUMINUM gallium nitride, *MOLECULAR beam epitaxy, *MOLECULAR self-assembly, *TEMPERATURE effect, *ELECTRON diffraction

Authors: Zhu, J.¹ jz33@hw.ac.uk, Eldose, N.M.¹, Mavridi, N.¹, Prior, K.A.¹, Moug, R.T.¹

Superior Title: Journal of Crystal Growth. Mar2018, Vol. 485, p86-89. 4p.

Subject Terms: *MOLECULAR beam epitaxy, *GALLIUM arsenide, *SPHALERITE, *TEMPERATURE effect, *X-ray spectra, *PHOTOLUMINESCENCE

Authors: Papadomanolaki, E.¹ elpapad@physics.uoc.gr, Bazioti, C.², Kazazis, S.A.¹, Androulidaki, M.³, Dimitrakopulos, G.P.², Iliopoulos, E.^1,3

Superior Title: Journal of Crystal Growth. Mar2016, Vol. 437, p20-25. 6p.

Subject Terms: *MOLECULAR beam epitaxy, *INDIUM gallium nitride films, *SUBSTRATES (Materials science), *TEMPERATURE effect, *MOLECULAR structure, *ELECTRIC properties of metals

Authors: Golam Sarwar, A.T.M.^1,2, Carnevale, Santino D.¹, Kent, Thomas F.², Laskar, Masihhur R.^1,2, May, Brelon J.², Myers, Roberto C.^1,2 myers.1079@osu.edu

Superior Title: Journal of Crystal Growth. Oct2015, Vol. 428, p59-70. 12p.

Subject Terms: *MOLECULAR beam epitaxy, *INDIUM nitride, *NANOWIRES, *SILICON, *CRYSTAL growth, *DISCONTINUOUS precipitation, *SUBSTRATES (Materials science), *TEMPERATURE effect

Authors: Chang, Menglin^1,2 (AUTHOR), Li, Jiayi¹ (AUTHOR), Yuan, Ziyuan¹ (AUTHOR), Zhang, Kedong^1,2 (AUTHOR), Li, Chen¹ (AUTHOR), Deng, Yu^1,2,3 (AUTHOR) dengyu@nju.edu.cn, Lu, Hong^1,2,3 (AUTHOR) hlu@nju.edu.cn, Chen, Yan-Feng¹ (AUTHOR)

Superior Title: Journal of Crystal Growth. Jun2022, Vol. 588, pN.PAG-N.PAG. 1p.

Subject Terms: *MOLECULAR beam epitaxy, *THICK films, *THIN films, *TRANSMISSION electron microscopy, *OPTICAL losses, *ALUMINUM films, *TEMPERATURE effect

Authors: Cabrera-Montealvo, J.J.¹ (AUTHOR), Espinosa-Vega, L.I.¹ (AUTHOR), Hernández-Gaytán, L.M.¹ (AUTHOR), Mercado-Ornelas, C.A.¹ (AUTHOR), Perea-Parrales, F.E.¹ (AUTHOR), Belio-Manzano, A.¹ (AUTHOR), Yee-Rendón, C.M.² (AUTHOR), Rodríguez, A.G.¹ (AUTHOR), Méndez-García, V.H.¹ (AUTHOR), Cortes-Mestizo, I.E.^1,3 (AUTHOR) irving.cortes@uaslp.mx

Superior Title: Thin Solid Films. Apr2022, Vol. 748, pN.PAG-N.PAG. 1p.

Subject Terms: *MOLECULAR beam epitaxy, *RAPID thermal processing, *TEMPERATURE effect, *OPTICAL properties, *CONDUCTION bands, *RAMAN spectroscopy

Authors: Oussalah, Slimane¹ (AUTHOR) soussalah@cdta.dz, Filali, Walid² (AUTHOR), Garoudja, Elyes² (AUTHOR), Zatout, Boumediene¹ (AUTHOR), Lekoui, Fouaz³ (AUTHOR), Amrani, Rachid^4,5 (AUTHOR), Sengouga, Noureddine⁶ (AUTHOR), Henini, Mohamed⁷ (AUTHOR)

Superior Title: Microelectronics Journal. Apr2022, Vol. 122, pN.PAG-N.PAG. 1p.

Subject Terms: *MOLECULAR beam epitaxy, *SCHOTTKY barrier diodes, *BERYLLIUM, *AUDITING standards, *GALLIUM arsenide, *SCHOTTKY barrier, *GALLIUM antimonide

Authors: Yurasov, D.V.^1,2 Inquisitor@ipm.sci-nnov.ru, Luk׳yanov, A.Yu.¹, Volkov, P.V.¹, Goryunov, A.V.¹, Tertyshnik, A.D.¹, Drozdov, M.N.¹, Novikov, A.V.^1,2

Superior Title: Journal of Crystal Growth. Mar2015, Vol. 413, p42-45. 4p.

Subject Terms: *MOLECULAR beam epitaxy, *TEMPERATURE effect, *INTERFEROMETRY, *SUBSTRATES (Materials science), *SILICON, *ANTIMONY

Authors: Hervieu, Yu.¹ ervye@mail.tsu.ru

Superior Title: Russian Microelectronics. Dec2014, Vol. 43 Issue 8, p519-525. 7p.

Subject Terms: *MOLECULAR beam epitaxy, *SEMICONDUCTOR doping, *SURFACE chemistry, *CRYSTAL growth, *TEMPERATURE effect

Authors: Cornuelle, Evan M., Growden, Tyler A., Storm, David F., Brown, Elliott R., Zhang, Weidong, Downey, Brian P., Gokhale, Vikrant, Ruppalt, Laura B., Champlain, James G., Peri, Prudhvi, McCartney, Martha R., Smith, David J., Meyer, David J., Berger, Paul R.

Superior Title: AIP Advances; May2020, Vol. 10 Issue 5, p1-7, 7p

Subject Terms: RESONANT tunneling, TUNNEL diodes, DENSITY currents, TEMPERATURE effect, MOLECULAR beam epitaxy, TRANSMISSION electron microscopy, TUNNEL design & construction

Authors: Zanouni, Mohamed^1,2, Ben Azzouz, Chiraz³, Derivaz, Mickael² mickael.derivaz@uha.fr, Dentel, Didier², Denys, Emmanuel², Diani, Mustapha¹, Aouni, Abdessamad¹, Morales, Francisco M.⁴, Mánuel, José M.⁴, García, Rafael⁴, Bischoff, Jean-Luc²

Superior Title: Journal of Crystal Growth. Apr2014, Vol. 391, p121-129. 9p.

Subject Terms: *MOLECULAR beam epitaxy, *LANTHANUM compounds, *IRON, *SUBSTRATES (Materials science), *TEMPERATURE effect, *CRYSTAL structure, *REFLECTION high energy electron diffraction

Authors: Richards, Robert D.¹ r.richards@sheffield.ac.uk, Bastiman, Faebian¹ f.bastiman@sheffield.ac.uk, Hunter, Christopher J.¹ dtp09cjh@sheffield.ac.uk, Mendes, Danuta F.¹ dfmendes1@sheffield.ac.uk, Mohmad, Abdul R.^1,2 a.mohmad@sheffield.ac.uk, Roberts, John S.¹ j.s.roberts@sheffield.ac.uk, David, John P.R.¹ j.p.david@sheffield.ac.uk

Superior Title: Journal of Crystal Growth. Mar2014, Vol. 390, p120-124. 5p.

Subject Terms: *MOLECULAR beam epitaxy, *CRYSTAL growth, *ARSENIC analysis, *TEMPERATURE effect, *PHOTOLUMINESCENCE, *BISMUTH

Authors: Wei, Yanping¹, Gao, Cunxu¹ gaocunx@lzu.edu.cn, Dong, Chunhui¹, Ma, Zhikun¹, Li, Jiangong¹, Xue, Desheng¹

Superior Title: Applied Surface Science. Feb2014, Vol. 293, p71-75. 5p.

Subject Terms: *THERMAL stability, *MOLECULAR beam epitaxy, *IRON, *METALLIC films, *SILICON, *TEMPERATURE effect, *ANNEALING of metals, *TRANSMISSION electron microscopy

Authors: Watanabe, Katsuyuki¹ wkatsu@iis.u-tokyo.ac.jp, Akiyama, Tomoyuki², Yokoyama, Yoshitaka², Takemasa, Keizo², Nishi, Kenichi^1,2, Tanaka, Yu^2,3, Sugawara, Mitsuru^1,2, Arakawa, Yasuhiko^1,4

Superior Title: Journal of Crystal Growth. Sep2013, Vol. 378, p627-630. 4p.

Subject Terms: *MOLECULAR beam epitaxy, *GALLIUM arsenide, *QUANTUM dots, *LASER beams, *HOUSEHOLD electronics, *TEMPERATURE effect, *OPTOELECTRONIC devices