Authors: Yoon, I. T., Lee, S. W., Kang, T. W., Dongwan Koh, Fu, D. J.

Superior Title: Journal of The Electrochemical Society; Jan2008, Vol. 155 Issue 1, pK1-K4, 4p, 7 Graphs

Subject Terms: FERROMAGNETISM, QUANTUM dots, QUANTUM electronics, SEMICONDUCTORS, ELECTRIC resistance, ION implantation, ANNEALING of metals, X-ray diffraction, MANGANESE, GERMANIUM, SILICON

Authors: Park, Y. S., Park, C. J., Park, C. M., Na, J. H., Oh, J. S., Yoon, I. T., Cho, H. Y., Kang, T. W., Oh, Jae-Eung

Superior Title: Applied Physics Letters; 4/11/2005, Vol. 86 Issue 15, p152109, 3p, 4 Graphs

Subject Terms: MOLECULAR beam epitaxy, DEEP level transient spectroscopy, SILICON, CRYSTAL defects, DISLOCATIONS in crystals

Authors: Buh, G. H., Chung, H. J., Kim, C. K., Yi, J. H., Yoon, I. T., Kuk, Y.

Superior Title: Applied Physics Letters; 7/3/2000, Vol. 77 Issue 1, 2 Diagrams, 4 Graphs

Subject Terms: SILICON, MICROSCOPY