Authors: Dasika, V. D., Semichaevsky, A. V., Petropoulos, J. P., Dibbern, J. C., Dangelewicz, A. M., Holub, M., Bhattacharya, P. K., Zide, J. M. O., Johnson, H. T., Goldman, R. S.
Subject Terms: Electronic Density of States, Gallium Arsenide, III-V Semiconductors, Indium Compounds, Manganese, Scanning Tunnelling Microscopy, Scanning Tunnelling Spectroscopy, Semiconductor Quantum Dots, Tight-binding Calculations, Physics, Science
File Description: application/pdf
Relation: Dasika, V. D.; Semichaevsky, A. V.; Petropoulos, J. P.; Dibbern, J. C.; Dangelewicz, A. M.; Holub, M.; Bhattacharya, P. K.; Zide, J. M. O.; Johnson, H. T.; Goldman, R. S. (2011). "Influence of Mn dopants on InAs/GaAs quantum dot electronic states." Applied Physics Letters, 98(14): 141907.; http://hdl.handle.net/2027.42/98664; Applied Physics Letters
