Authors: Mtunzi, Makhayeni¹ (AUTHOR) makhayeni.mtunzi.20@ucl.ac.uk, Jia, Hui¹ (AUTHOR) hui.jia@ucl.ac.uk, Hou, Yaonan^2,3 (AUTHOR), Yu, Xueying¹ (AUTHOR), Zeng, Haotian¹ (AUTHOR), Yang, Junjie¹ (AUTHOR), Yan, Xingzhao² (AUTHOR), Skandalos, Ilias² (AUTHOR), Deng, Huiwen¹ (AUTHOR), Park, Jae-Seong¹ (AUTHOR), Li, Wei⁴ (AUTHOR) liwei88@bjut.edu.cn, Li, Ang⁴ (AUTHOR), El Hajraoui, Khalil^5,6 (AUTHOR), Ramasse, Quentin^5,7 (AUTHOR), Gardes, Frederic² (AUTHOR), Tang, Mingchu¹ (AUTHOR) mingchu.tang@ucl.ac.uk, Chen, Siming¹ (AUTHOR), Seeds, Alwyn¹ (AUTHOR), Liu, Huiyun¹ (AUTHOR)

Superior Title: Journal of Physics D: Applied Physics. 6/28/2024, Vol. 57 Issue 25, p1-8. 8p.

Subject Terms: *MOLECULAR beam epitaxy, *GERMANIUM, *EPITAXY, *BUFFER layers, *SILICON

Authors: Ferro, Gabriel¹ (AUTHOR)

Superior Title: Critical Reviews in Solid State & Materials Science. 2022, Vol. 47 Issue 4, p520-537. 18p.

Subject Terms: SILICON carbide, MOLECULAR beam epitaxy, GERMANIUM, CHEMICAL vapor deposition, EPITAXY

Authors: Choudhary, Sumit¹, Schwarz, Daniel², Funk, Hannes S.², Weishaupt, D.², Khosla, Robin², Sharma, Satinder K.¹ satinder@iitmandi.ac.in, Schulze, Jorg² joerg.schulze@fau.de

Superior Title: IEEE Transactions on Electron Devices. May2022, Vol. 69 Issue 5, p2725-2731. 7p.

Subject Terms: MOLECULAR beam epitaxy, ZIRCONIUM oxide, THRESHOLD voltage, VOLTAGE, HAFNIUM oxide

Authors: Wang, Yu-Sheng¹ (AUTHOR), Liu, Zheng-Chang² (AUTHOR), Ye, Jia-Jia¹ (AUTHOR), Zhang, Wang-Wei¹ (AUTHOR), Gu, Yu¹ (AUTHOR), Yan, Xue-Jun¹ (AUTHOR), Lu, Ming-Hui^1,3 (AUTHOR), Li, Deyu⁴ (AUTHOR), Lu, Hong^1,3 (AUTHOR) hlu@nju.edu.cn, Chen, Yan-Feng¹ (AUTHOR)

Superior Title: Journal of Applied Physics. 6/7/2019, Vol. 125 Issue 21, pN.PAG-N.PAG. 7p. 1 Chart, 5 Graphs.

Subject Terms: *MOLECULAR beam epitaxy, *THERMOELECTRIC materials, *ENERGY dissipation, *THIN films, *GERMANIUM, *SILICON, THERMAL properties of alloys

Authors: Deppe, M.¹ michael.deppe@uni-paderborn.de, Gerlach, J. W.², Shvarkov, S.¹, Rogalla, D.³, Becker, H.-W.³, Reuter, D.¹, As, D. J.¹

Superior Title: Journal of Applied Physics. 2019, Vol. 125 Issue 9, pN.PAG-N.PAG. 9p. 2 Charts, 11 Graphs.

Subject Terms: *GALLIUM nitride, *MOLECULAR beam epitaxy, *GERMANIUM, *DISLOCATION density, *ATOMIC force microscopy, *PHOTOLUMINESCENCE

Authors: Aberl, Johannes¹ (AUTHOR), Vukušić, Lada¹ (AUTHOR) lada.vukusic@jku.at, Fournel, Frank² (AUTHOR), Hartmann, Jean-Michel² (AUTHOR), Brehm, Moritz¹ (AUTHOR)

Superior Title: Physica Status Solidi. A: Applications & Materials Science. Sep2022, Vol. 219 Issue 17, p1-7. 7p.

Subject Terms: *EPITAXY, *MOLECULAR beam epitaxy, *ATOMIC force microscopy, *SPIN-spin coupling constants, *STRAY currents

Authors: Zheng, Beining¹ (AUTHOR), Wu, Zehan^1,2 (AUTHOR), Guo, Feng¹ (AUTHOR), Ding, Ran¹ (AUTHOR), Mao, Jianfeng¹ (AUTHOR), Xie, Maohai³ (AUTHOR), Lau, Shu Ping^1,2 (AUTHOR) daniel.lau@polyu.edu.hk, Hao, Jianhua^1,2 (AUTHOR) jh.hao@polyu.edu.hk

Superior Title: Advanced Optical Materials. 10/18/2021, Vol. 9 Issue 20, p1-9. 9p.

Subject Terms: *MOLECULAR beam epitaxy, *TELLURIUM, *GERMANIUM, *HETEROJUNCTIONS, *PHOTOELECTRIC devices, *SEMICONDUCTOR materials

Authors: Timofeev, V. A.^{Aff1, IDS8756699022060127_cor1}, Mashanov, V. I., Nikiforov, A. I., Skvortsov, I. V., Loshkarev, I. D., Kolyada, D. V., Firsov, D. D., Komkov, O. S.^{Aff2, IDS8756699022060127_cor8}

Superior Title: Optoelectronics, Instrumentation and Data Processing. 58(6):571-578

Authors: Yurasov, D. V.^1,2 Inquisitor@ipm.sci-nnov.ru, Antonov, A. V.^1,2, Drozdov, M. N.^1,2, Schmagin, V. B.^1,2, Spirin, K. E.¹, Novikov, A. V.^1,2

Superior Title: Journal of Applied Physics. 2015, Vol. 118 Issue 14, p145701-1-145701-6. 6p. 4 Graphs.

Subject Terms: *GERMANIUM, *MOLECULAR beam epitaxy, *CHEMICAL vapor deposition, *CAPACITANCE-voltage characteristics, *SECONDARY ion mass spectrometry, *ANTIMONY compounds

Authors: Dirko, Vladimir V., Lozovoy, Kirill A., Kokhanenko, Andrey P., Kukenov, Olzhas I., Korotaev, Alexander G., Voitsekhovskii, Alexander V.

Superior Title: Nanomaterials (2079-4991); Jan2023, Vol. 13 Issue 2, p231, 12p

Subject Terms: EPITAXY, GERMANIUM, MOLECULAR beam epitaxy, ELECTRON diffraction, SILICON

Authors: Vladimir V. Dirko, Kirill A. Lozovoy, Andrey P. Kokhanenko, Olzhas I. Kukenov, Alexander G. Korotaev, Alexander V. Voitsekhovskii

Superior Title: Nanomaterials, Vol 13, Iss 231, p 231 (2023)

Subject Terms: 2D materials, two-dimensional structures, molecular beam epitaxy, silicon, germanium, superstructure, Chemistry, QD1-999

Relation: https://www.mdpi.com/2079-4991/13/2/231; https://doaj.org/toc/2079-4991; https://doaj.org/article/1939b59bf47647b096da258831bbb52a

Availability: https://doi.org/10.3390/nano13020231
https://doaj.org/article/1939b59bf47647b096da258831bbb52a

Authors: Smets, Quentin¹, Verhulst, Anne S.¹, Simoen, Eddy¹, Collaert, Nadine¹, Heyns, Marc M.¹, Gundlach, David², Richter, Curt²

Superior Title: IEEE Transactions on Electron Devices. Sep2017, Vol. 64 Issue 9, p3622-3626. 5p.

Subject Terms: TUNNEL field-effect transistors, MOLECULAR beam epitaxy, SEMICONDUCTOR defects, TUNNEL diodes, GERMANIUM

Authors: Izhnin, Ihor I.^{Aff1, IDs13204021016670_cor1}, Lozovoy, Kirill A., Kokhanenko, Andrey P., Khomyakova, Kristina I., Douhan, Rahaf M. H., Dirko, Vladimir V., Voitsekhovskii, Alexander V., Fitsych, Olena I., Akimenko, Nataliya Yu.

Superior Title: Applied Nanoscience. 12(3):253-263

Authors: Lozovoy, K. A.^{Aff1, IDs11182022024957_cor1}, Dirko, V. V., Vinarskiy, V. P., Kokhanenko, A. P., Voitsekhovskii, A. V., Akimenko, N. Yu.

Superior Title: Russian Physics Journal. 64(9):1583-1591

Authors: Deppe, Michael¹ (AUTHOR) michael.deppe@uni-paderborn.de, Henksmeier, Tobias¹ (AUTHOR), Gerlach, Jürgen W.² (AUTHOR), Reuter, Dirk¹ (AUTHOR), As, Donat J.¹ (AUTHOR)

Superior Title: Physica Status Solidi (B). Apr2020, Vol. 257 Issue 4, p1-10. 10p.

Subject Terms: *MOLECULAR beam epitaxy, *SECONDARY ion mass spectrometry, *TERNARY alloys, *DISLOCATION density

Authors: Andersson, C.¹, Süess, M. J.², Webb, D. J.¹, Marchiori, C.¹, Sousa, M.¹, Caimi, D.¹, Siegwart, H.¹, Fompeyrine, J.¹

Superior Title: Journal of Applied Physics. Dec2011, Vol. 110 Issue 11, p114504. 7p. 3 Black and White Photographs, 11 Graphs.

Subject Terms: *METAL oxide semiconductor field-effect transistors, *MOLECULAR beam epitaxy, *LANTHANUM compounds, *CAPACITANCE-voltage characteristics, *ELECTRON mobility, *ELECTRON distribution, *GERMANIUM

Authors: Bratland, K. A.¹, Spila, T.¹, Cahill, D. G.¹, Greene, J. E.¹, Desjardins, P.² patrick.desjardins@polymtl.ca

Superior Title: Journal of Applied Physics. Mar2011, Vol. 109 Issue 6, p063513. 5p. 1 Diagram, 4 Graphs.

Subject Terms: *GERMANIUM, *MOLECULAR beam epitaxy, *SURFACE roughness, *LOW temperatures, *SEMIMETALS

Authors: Singha, R. K.¹, Das, S.¹, Majumdar, S.¹, Das, K.¹, Dhar, A.¹, Ray, S. K.¹

Superior Title: Journal of Applied Physics. Jun2008, Vol. 103 Issue 11, p114301. 8p. 12 Graphs.

Subject Terms: *GERMANIUM, *MOLECULAR beam epitaxy, *CRYSTAL growth, *EPITAXY, *SPECTRUM analysis

Authors: Bolkhovityanov, Yu. B.¹ bolkhov@isp.nsc.ru, Deryabin, A. S.¹, Gutakovskii, A. K.¹, Revenko, M. A.¹, Sokolov, L. V.^1,2

Superior Title: Journal of Applied Physics. 12/15/2004, Vol. 96 Issue 12, p7665-7674. 10p. 4 Black and White Photographs, 1 Diagram, 3 Charts, 4 Graphs.

Subject Terms: *HETEROSTRUCTURES, *MOLECULAR beam epitaxy, *CRYSTALS, *SUPERLATTICES, *GERMANIUM, *PARTICLES (Nuclear physics), *CRYSTAL growth

Authors: Goldfarb, I., Azar, J. L., Grisaru, A., Grunbaum, E., Nathan, M.

Superior Title: Journal of Applied Physics. 3/1/2003, Vol. 93 Issue 5, p3057. 6p. 6 Black and White Photographs.

Subject Terms: *MOLECULAR beam epitaxy, *GERMANIUM, *ELECTRON diffraction, *SCANNING probe microscopy