Authors: Mohammadi, Hanif, Roca, Ronel C., Zhang, Yuwei, Lee, Hyunju, Ohshita, Yoshio, Iwata, Naotaka, Kamiya, Itaru

Superior Title: Journal of Applied Physics; May2023, Vol. 133 Issue 18, p1-11, 11p

Subject Terms: QUANTUM dots, GALLIUM arsenide, PASSIVATION, MOLECULAR beam epitaxy, ATOMIC layer deposition, X-ray photoelectron spectroscopy

Authors: Banerjee, Amal^Aff2

Contributors: Banerjee, Amal^Aff1

Superior Title: Semiconductor Devices : Diodes, Transistors, Solar Cells, Charge Coupled Devices and Solid State Lasers. :181-207

Authors: Gorshkov, D. V.¹ (AUTHOR) GorshkovDV@isp.nsc.ru, Sidorov, G. Yu.¹ (AUTHOR), Sabinina, I. V.¹ (AUTHOR), Sidorov, Yu. G.¹ (AUTHOR), Marin, D. V.¹ (AUTHOR), Yakushev, M. V.¹ (AUTHOR)

Superior Title: Technical Physics Letters. Aug2020, Vol. 46 Issue 8, p741-744. 4p.

Subject Terms: *ATOMIC layer deposition, *MOLECULAR beam epitaxy, *TEMPERATURE effect, *METALLIC thin films

Authors: Jia, Fuchun¹, Ma, Xiaohua¹ xhma@xidian.edu.cn, Yang, Ling¹ yangling@xidian.edu.cn, Hou, Bin¹, Zhang, Meng¹ 498078211@qq.com, Zhu, Qing¹, Wu, Mei¹, Mi, Minhan¹, Zhu, Jiejie¹, Liu, Siyu¹, Hao, Yue¹

Superior Title: IEEE Transactions on Electron Devices. Dec2021, Vol. 68 Issue 12, p6069-6075. 7p.

Subject Terms: GALLIUM nitride, MOLECULAR beam epitaxy, MODULATION-doped field-effect transistors, BUFFER layers, CAPACITANCE measurement, RADIO frequency

Authors: Song, Luying, Li, Hui, Zhang, Yanfeng, Shi, Jianping

Superior Title: Journal of Applied Physics; 2/14/2022, Vol. 131 Issue 6, p1-17, 17p

Subject Terms: ATOMIC layer deposition, CHARGE density waves, CHEMICAL vapor deposition, MOLECULAR beam epitaxy, CHEMICAL peel, TRANSITION metals, CUPRATES

Authors: Markov, Vyacheslav F.^Aff2, Korotcenkov, Ghenadii^Aff3, Maskaeva, Larisa N.^Aff2

Contributors: Korotcenkov, Ghenadii, editor^Aff1

Superior Title: Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors : Volume 1, Materials and Technology. :233-275

Authors: Pi, T. W.¹, Lin, H. Y.², Chiang, T. H.³, Liu, Y. T.², Wertheim, G. K.⁴, Kwo, J.², Hong, M.⁵

Superior Title: Journal of Applied Physics. May2013, Vol. 113 Issue 20, p203703. 5p. 1 Diagram, 4 Graphs.

Subject Terms: *ATOMIC layer deposition, *MOLECULAR beam epitaxy, *CHEMICAL bonds, *ORGANOALUMINUM compounds, *ATOMS

Superior Title: CrystEngComm. 7/28/2019, Vol. 21 Issue 28, p4117-4121. 5p.

Subject Terms: *MOLECULAR beam epitaxy, *ATOMIC layer deposition, *INTERNET protocols

Authors: Lin, K.Y.¹, Wan, H.W.¹, Chen, K.H.M.¹, Fanchiang, Y.T.¹, Chen, W.S.¹, Lin, Y.H.¹, Cheng, Y.T.¹, Chen, C.C.¹, Lin, H.Y.¹, Young, L.B.¹, Cheng, C.P.¹ cpcheng@mail.ncyu.edu.tw, Pi, T.W.¹ pi@nsrrc.org.tw, Kwo, J.¹ raynien@phys.nthu.edu.tw, Hong, M.¹ mhong@phys.ntu.edu.tw

Superior Title: Journal of Crystal Growth. Apr2019, Vol. 512, p223-229. 7p.

Subject Terms: *MOLECULAR beam epitaxy, *ATOMIC layer deposition, *SUPERLATTICES, *SEMICONDUCTORS, *GALLIUM arsenide

Authors: Hong Lim, Kee¹, Man, Minh Tan², Lee, Chang-Lyoul³, Yim, Sang-Youp³, Choi, Jin Chul¹, Lee, Hong Seok² hslee1@jbnu.ac.kr

Superior Title: Applied Surface Science. Oct2018, Vol. 456, p797-800. 4p.

Subject Terms: *QUANTUM dots, *MOLECULAR beam epitaxy, *ATOMIC layer deposition, *THERMAL analysis, *OPTOELECTRONIC devices

Authors: Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Dvoretskii, S. A., Mikhailov, N. N., Sidorov, G. Yu., Yakushev, M. V.

Superior Title: Journal of Communications Technology & Electronics; Mar2022, Vol. 67 Issue 3, p308-312, 5p

Subject Terms: ATOMIC layer deposition, MOLECULAR beam epitaxy, SURFACE passivation, BAND gaps, PASSIVATION, ACTIVATION energy

Authors: Prashant Kumar (119326), Aditya Dey (9914750), Jerome Roques (11896458), Loic Assaud (11896461), Sylvain Franger (2487823), Prakash Parida (1664173), Vasudevanpillai Biju (606458)

Subject Terms: Biophysics, Biochemistry, Medicine, Pharmacology, Biotechnology, Computational Biology, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, plane thermal expansion, parent material powders, outsmarted existing nanomaterials, optimum photon fluence, nonscalable costly methods, molecular beam epitaxy, laser processing parameters, laser irradiation duration, laser fluence becomes, generation electronic devices, dft calculations suggest, critical control parameter, chemical vapor deposition, assisted condition reduces, atomic layer deposition, ∼ 400 nm, sheets gradually decrease, report photoexfoliation synthesis, 2 , atomic layers followed, atomic graphene layers

Time: early 21st century

Relation: https://figshare.com/articles/journal_contribution/Photoexfoliation_Synthesis_of_2D_Materials/17761116

Availability: https://doi.org/10.1021/acsmaterialslett.1c00651.s001

Authors: Shen Hu, Lin, Edward L., Hamze, Ali K., Posadas, Agham, HsinWei Wu, Smith, David J., Demkov, Alexander A., Ekerdt, John G.

Superior Title: Journal of Chemical Physics; 2017, Vol. 146 Issue 5, p1-10, 10p, 1 Color Photograph, 2 Diagrams, 2 Charts, 9 Graphs

Subject Terms: ZINTL compounds, PEROVSKITE, ATOMIC layer deposition, MOLECULAR beam epitaxy, X-ray photoelectron spectroscopy, DENSITY functional theory

Authors: Hong, M.¹ mhong@phys.ntu.edu.tw, Wan, H.W.¹, Chang, P.², Lin, T.D.¹, Chang, Y.H.², Lee, W.C.³, Pi, T.W.⁴, Kwo, J.³ raynien@phys.nthu.edu.tw

Superior Title: Journal of Crystal Growth. Nov2017, Vol. 477, p159-163. 5p.

Subject Terms: *SURFACE passivation, *MOLECULAR beam epitaxy, *ATOMIC layer deposition, *HAFNIUM oxide, *DIELECTRICS, *SEMICONDUCTOR manufacturing

Authors: Lin, Y.H.¹, Lin, K.Y.¹, Hsueh, W.J.², Young, L.B.¹, Chang, T.W.¹, Chyi, J.I.², Pi, T.W.³ pi@nsrrc.org.tw, Kwo, J.⁴ raynien@phys.nthu.edu.tw, Hong, M.¹ mhong@phys.ntu.edu.tw

Superior Title: Journal of Crystal Growth. Nov2017, Vol. 477, p164-168. 5p.

Subject Terms: *MOLECULAR beam epitaxy, *ATOMIC layer deposition, *ANTIMONIDES, *X-ray photoelectron spectroscopy, *SEMICONDUCTORS

Authors: Chen, Hugo Juin-Yu¹, Su, Yang-Zhe¹, Yang, Dian-Long¹, Huang, Tseh-Wet¹, Yu, Ing-Song¹

Superior Title: Surface & Coatings Technology. Sep2017, Vol. 324, p491-497. 7p.

Subject Terms: *MOLECULAR beam epitaxy, *METAL organic chemical vapor deposition, *INDIUM nitride, *QUANTUM dots, *ATOMIC layer deposition

Authors: Dorow, Chelsey, O'Brien, Kevin, Naylor, Carl H., Lee, Sudarat, Penumatcha, Ashish, Hsiao, Andy, Tronic, Tristan, Christenson, Michael, Maxey, Kirby, Zhu, Hui, Oni, Adedapo, Alaan, Urusa, Gosavi, Tanay, Gupta, Arnab Sen, Bristol, Robert, Clendenning, Scott, Metz, Matthew, Avci, Uygar

Superior Title: IEEE Transactions on Electron Devices; Dec2021, Vol. 68 Issue 12, p6592-6598, 7p

Subject Terms: METAL oxide semiconductor field-effect transistors, ATOMIC layer deposition, TRANSISTORS, MOLECULAR beam epitaxy, MOORE'S law, MONOMOLECULAR films

Authors: Sidorov, G. Yu.^Aff1, Gorshkov, D. V., Sidorov, Yu. G., Sabinina, I. V., Varavin, V. S.

Superior Title: Optoelectronics, Instrumentation and Data Processing. 56(5):492-497

Authors: Wen, Chao, Lanza, Mario

Superior Title: Applied Physics Reviews; Jun2021, Vol. 8 Issue 2, p1-12, 12p

Subject Terms: CALCIUM fluoride, VAN der Waals forces, ATOMIC layer deposition, MOLECULAR beam epitaxy, CHEMICAL vapor deposition, DIELECTRIC loss, DIELECTRICS

Authors: Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Varavin, V. S., Dvoretsky, S. A., Mikhailov, N. N., Sidorov, G. Y., Yakushev, M. V., Marin, D. V.

Superior Title: Journal of Electronic Materials; Apr2021, Vol. 50 Issue 4, p2323-2330, 8p

Subject Terms: ION implantation, ATOMIC layer deposition, MOLECULAR beam epitaxy, EPITAXY, ION energy, MERCURY, MONOMOLECULAR films, SURFACE states