Authors: Myers, David R., Lott, J. A., Klem, J. F., Tigges, C. P., Lowney, J. R.

Contributors: United States. Department of Energy. Office of the Assistant Secretary for Defense Programs.

Superior Title: 1990 international electron device conference, San Francisco, CA (USA), 10-12 Dec 1990

Subject Terms: Transistors 360603* -- Materials-- Properties, Field Effect Transistors, Semiconductor Materials, Pnictides, Indium Arsenides, Semiconductor Devices, 36 Materials Science, Indium Compounds, Materials, Gallium Compounds, Aluminium Compounds, Arsenides, Aluminium Arsenides, Energy Gap, Band Theory, Arsenic Compounds, Gallium Arsenides

File Description: 5 pages; Text

Relation: other: DE91000401; rep-no: SAND-90-1911C; rep-no: CONF-901244--1; grantno: AC04-76DP00789; osti: 6455495; https://digital.library.unt.edu/ark:/67531/metadc1209684/; ark: ark:/67531/metadc1209684

Availability: https://digital.library.unt.edu/ark:/67531/metadc1209684/