Authors: Junaid, Muhammad, Hsiao, Ching-Lien, Chen, Yen-Ting, Lu, Jun, Palisaitis, Justinas, Persson, Per O A, Hultman, Lars, Birch, Jens
Subject Terms: GaN, nanorods, X-ray diffraction, TEM, photoluminescence, magnetron sputter epitaxy, sputtering, Condensed Matter Physics, Den kondenserade materiens fysik, Nano Technology, Nanoteknik
File Description: application/pdf
Relation: Nanomaterials, 2018, 8:4; orcid:0000-0001-7192-0670; orcid:0000-0001-6451-6733; orcid:0000-0003-3203-7935; orcid:0000-0001-9140-6724; orcid:0000-0002-2837-3656; orcid:0000-0002-8469-5983; http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-84654; ISI:000434889100044
Authors: Li, Xun, Janzén, Erik, Henry, Anne
Subject Terms: epitaxy, CVD, low-off axis, morphology, AFM, Ceramics, Keramteknik
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Relation: Materials Science Forum, 1662-9752; 778-780; SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, p. 131-134; http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-108190; ISI:000336634100030
Authors: Lundskog, Anders, Hsu, Chih-Wei, Nilsson, Daniel, Karlsson, K Fredrik, Forsberg, Urban, Holtz, Per-Olof, Janzén, Erik
Subject Terms: A3. Hot wall epitaxy A3. Metalorganic vapor phase epitaxy A3. Selective epitaxy B1. Nitrides, Natural Sciences, Naturvetenskap
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Relation: Journal of Crystal Growth, 0022-0248, 2013, 363, s. 287-293; http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-79317; ISI:000313205400047
Authors: Jokubavicius, Valdas, Palisaitis, Justinas, Vasiliauskas, Remigijus, Yakimova, Rositsa, Syväjärvi, Mikael
Subject Terms: 3C-SiC crystals, sublimation epitaxy, voids, Engineering and Technology, Teknik och teknologier
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Relation: Materials Science Forum, Vols. 645-648, p. 375-378; http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-58211; ISI:000279657600089
Authors: Chubarov, M., Pedersen, Henrik, Högberg, Hans, Filippov, Stanislav, Engelbrecht, J.A. A., O'Connel, J., Henry, Anne
Subject Terms: Boron nitride, Epitaxy, XRD, TEM, FTIR, Cathodoluminescence, Engineering and Technology, Teknik och teknologier
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Relation: Physica. B, Condensed matter, 0921-4526, 2014, 439, s. 29-34; http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-105563; ISI:000331620700007
Authors: Hemmingsson, Carl, Pozina, Galia
Subject Terms: Crystal morphology, Interfaces, Roughening, Growth from vapor, Hydride vapor phase epitaxy, Nitrides, Natural Sciences, Naturvetenskap
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Relation: Journal of Crystal Growth, 0022-0248, 2013, 366, s. 61-66; http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-90144; ISI:000314824800013
Authors: Henry, Anne, Leone, Stefano, Beyer, Franziska, Pedersen, Henrik, Kordina, Olle, Andersson, Sven, Janzén, Erik
Subject Terms: Silicon carbide, Chloride, Epitaxy, Doping, PL, DLTS, Engineering and Technology, Teknik och teknologier
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Relation: Physica. B, Condensed matter, 0921-4526, 2012, 407:10, s. 1467-1471; http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-77522; ISI:000303149600004
Subject Terms: A1. Nucleation, A1. Characterization, A1. Polar surfaces A3. Vapor phase epitaxy, B1. Cubic Silicon Carbide, Natural Sciences, Naturvetenskap
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Relation: Journal of Crystal Growth, 0022-0248, 2012, 348:1, s. 91-96; http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-76363; ISI:000303937900017
Authors: Jokubavicius, Valdas, Liljedahl, Richard, Ou, Yiyu, Ou, Haiyan, Kamiyama, Satoshi, Yakimova, Rositza, Syväjärvi, Mikael
Subject Terms: 3C-SiC, 6H-SiC, Geometrical Control, Sublimation Epitaxy, Natural Sciences, Naturvetenskap
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Relation: Materials Science Forum, 0255-5476, 2011, 679-680, s. 103-106; http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-73704
Authors: Vasiliauskas, Remigijus, Marinova, M., Syväjärvi, Mikael, Liljedahl, Rickard, Zoulis, G., Lorenzzi, J., Ferro, G., Juillaguet, S., Camassel, J., K. Polychroniadis, E., Yakimova, Rositsa
Subject Terms: Nucleation, Characterization, Substrates, Vapor phase epitaxy, Cubic silicon carbide, Engineering and Technology, Teknik och teknologier
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Relation: Journal of Crystal Growth, 0022-0248, 2011, 324:1, s. 7-14; http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-69870; ISI:000292362600002
Authors: Luo, Jun, Gao, Xindong, Qiu, Zhi-Jun, Lu, Jun, Wu, Dongping, Zhao, Chao, Li, Junfeng, Chen, Dapeng, Hultman, Lars, Zhang, Shi-Li
Subject Terms: Dopant segregation (DS), epitaxy, morphological stability, NiSi(2), Schottky barrier height (SBH), ultrathin, Engineering and Technology, Teknik och teknologier
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Relation: IEEE Electron Device Letters, 0741-3106, 2011, 32:8, s. 1029-1031; http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-70223; ISI:000293710400012
Authors: Cubarovs, Mihails, Pedersen, Henrik, Högberg, Hans, Darakchieva, Vanya, Jens, Jensen, Persson, Per, Henry, Anne
Subject Terms: chemical vapor deposition, BN, epitaxy, X-ray diffraction, Condensed Matter Physics, Den kondenserade materiens fysik
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Relation: Physica Status Solidi. Rapid Research Letters, 1862-6254, 2011, 5:10-11, s. 397-399; orcid:0000-0002-7171-5383; orcid:0000-0002-8112-7411; orcid:0000-0001-9140-6724; orcid:0000-0001-5768-0244; http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-73160; ISI:000297747600014
Authors: Paskova, Tanya, Hanser, Drew A., Evans, Keith R.
Subject Terms: Ammonothermal growth, doping, gallium nitride (GaN), heterostructure field-effect transistor (HFET), hydride vapor phase epitaxy, laser diode (LD), light-emitting diode (LED), native substrates, point defects, Schottky diodes, solution growth, structural defects, surface orientation, thermal conductivity, Social Sciences, Samhällsvetenskap
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Relation: Proceedings of the IEEE, 0018-9219, 2010, 98:7, s. 1324-1338; http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-58340; ISI:000278811800021
Authors: ul-Hassan, Jawad, Bergman, J. Peder, Henry, Anne, Janzén, Erik
Subject Terms: Atomic force microscopy, Etching, Hot wall epitaxy, Semiconducting materials, Bipolar transistors, Natural Sciences, Naturvetenskap
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Relation: Journal of Crystal Growth, 0022-0248, 2008, 310:20, s. 4424-4429; http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-15197
Authors: Höglund, Linda, Petrini, E., Asplund, C., Malm, H., Andersson, J. Y., Holtz, Per-Olof
Subject Terms: Quantum dot, Epitaxy, MOVPE, InAs/GaAs, TBA, Growth, Other Engineering and Technologies not elsewhere specified, Övrig annan teknik
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Relation: Applied Surface Science, 0169-4332, 2006, 252:15, s. 5525-5529; http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-15764
Authors: Lundqvist, Björn
Subject Terms: Sublimation, epitaxy, SiC, polytype
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Availability: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-74414
Authors: Zhao, Ming
Subject Terms: Si/SiGe, Strain engineering, Molecular beam epitaxy, THz, Quantum cascade, Strain relaxation, Materials Engineering, Materialteknik
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Relation: Linköping Studies in Science and Technology. Dissertations, 0345-7524; 1176; http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-11746; urn:isbn:978-91-7393-911-9
Availability: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-11746
Authors: Elfving, Anders
Subject Terms: SiGe, Ge dots, nanostructures, molecular beam epitaxy, photodetector, Condensed Matter Physics, Den kondenserade materiens fysik
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Relation: Linköping Studies in Science and Technology. Dissertations, 0345-7524; 1003; http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-5909; urn:isbn:91-85497-24-X
Availability: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-5909
Index Terms: A3. Hot wall epitaxy A3. Metalorganic vapor phase epitaxy A3. Selective epitaxy B1. Nitrides, Natural Sciences, Naturvetenskap, Article in journal, info:eu-repo/semantics/article, text
URL:
Journal of Crystal Growth, 0022-0248, 2013, 363, s. 287-293
Index Terms: A3. Hot wall epitaxy A3. Metalorganic vapor phase epitaxy A3. Selective epitaxy B1. Nitrides, Natural Sciences, Naturvetenskap, Article in journal, info:eu-repo/semantics/article, text
URL:
Journal of Crystal Growth, 0022-0248, 2013, 363, s. 287-293