Authors: Merckling, C., Chang, Y. C., Lu, C. Y., Penaud, J., El-Kazzi, M., Bellenger, F., BRAMMERTZ, Guy, Hong, M., Kwo, J., MEURIS, Marc, Dekoster, J., Heyns, M. M., Caymax, M.

Contributors: heyns, marc/0000-0002-1199-4341, El Kazzi, Mario/0000-0003-2975-0481, Merckling, Clement/0000-0003-3084-2543, Brammertz, Guy/0000-0003-1404-7339, Hong, Mingwei/0000-0003-4657-0933

Subject Terms: Passivation, H2S, Molecular beam epitaxy, High-mu semiconductors

File Description: application/pdf

Relation: Microelectronic engineering, 88 (4) , p. 399 -402; http://hdl.handle.net/1942/31571; 402; 399; 88; WOS:000288524100019

Availability: https://doi.org/10.1016/j.mee.2010.09.012
http://hdl.handle.net/1942/31571

Authors: Merckling, C., Penaud, J., Kohen, D., Bellenger, F., Alian, A., BRAMMERTZ, Guy, El-Kazzi, M., Houssa, M., Dekoster, J., Caymax, M., MEURIS, Marc, Heyns, M. M.

Contributors: Kohen, David/0000-0002-2593-3355, El Kazzi, Mario/0000-0003-2975-0481, Merckling, Clement/0000-0003-3084-2543, houssa, michel/0000-0003-1844-3515, heyns, marc/0000-0002-1199-4341, Brammertz, Guy/0000-0003-1404-7339

Subject Terms: High mobility semiconductors, Passivation, Molecular beam epitaxy (MBE)

File Description: application/pdf

Relation: Microelectronic engineering, 86 (7-9) , p. 1592 -1595; http://hdl.handle.net/1942/31591; 1595; 7-9; 1592; 86; WOS:000267460100018

Availability: https://doi.org/10.1016/j.mee.2009.03.048
http://hdl.handle.net/1942/31591

Authors: Merckling, C., Chang, Y. C., Lu, C.Y., Penaud, J., BRAMMERTZ, Guy, Scarrozza, M., Pourtois, G., Kwo, J., Hong, M., Dekoster, J., MEURIS, Marc, Heyns, M., Caymax, M.

Contributors: Merckling, Clement/0000-0003-3084-2543, heyns, marc/0000-0002-1199-4341, Brammertz, Guy/0000-0003-1404-7339, Hong, Mingwei/0000-0003-4657-0933

Subject Terms: GaAs, H2S passivation, High-kappa dielectrics, Molecular beam epitaxy, CMOS, GAAS(001) SURFACES, SCHOTTKY-BARRIER, SULFUR, EPITAXY, OXIDE, MODEL, 1ST-PRINCIPLES, DEPOSITION, INSULATOR, GE

File Description: application/pdf

Relation: SURFACE SCIENCE, 605 (19-20) , p. 1778 -1783; http://hdl.handle.net/1942/31569; 1783; 19-20; 1778; 605; WOS:000294237600004

Availability: https://doi.org/10.1016/j.susc.2011.06.008
http://hdl.handle.net/1942/31569

Authors: Gökden, Sibel

Contributors: Fen Edebiyat Fakültesi

Subject Terms: Vapor-Phase Epitaxy, Molecular-Beam Epitaxy, Indium Nitride, Optical-Properties, Electron-Transport, Structural-Properties, Thin-Films, Gan, Mobility, Growth

File Description: application/pdf

Relation: Chinese Journal of Physics; Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı; https://hdl.handle.net/20.500.12462/8437; 46; 145; 152

Availability: https://doi.org/20.500.12462/8437
https://hdl.handle.net/20.500.12462/8437

Authors: Fireman, Micha N., L'Heureux, Guillaume, Wu, Feng, Mates, Tom, Young, Erin C., Speck, James S.

Contributors: UC Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA

Subject Terms: Molecular beam epitaxy, Ammonia molecular beam epitaxy, Germanium doping, Gallium nitride, Tunnel junctions

Relation: https://linkinghub.elsevier.com/retrieve/pii/S0022024818306213; Fireman, M. N., L’Heureux, G., Wu, F., Mates, T., Young, E. C., & Speck, J. S. (2019). High germanium doping of GaN films by ammonia molecular beam epitaxy. Journal of Crystal Growth, 508, 19–23. doi:10.1016/j.jcrysgro.2018.12.009; 2-s2.0-85058782448; JOURNAL OF CRYSTAL GROWTH; 19-23; http://hdl.handle.net/10754/678649; 508; WOS:000456430200003

Availability: https://doi.org/10.1016/j.jcrysgro.2018.12.009
http://hdl.handle.net/10754/678649

Authors: Jerng, Sahng-Kyoon, Jeon, Jae Ho, Kim, Youngwook, Kim, Jun Sung, Chun, Seung-Hyun

Contributors: Kim, Youngwook, Kim, Jun Sung

Subject Terms: SINGLE DIRAC CONE, BI2SE3, GROWTH, TRANSPORT, FIELD, GAP, Atomic layer deposition, Topological insulator, Bismuth selenide, van der Waals epitaxy, Molecular beam epitaxy

Relation: CURRENT APPLIED PHYSICS; Materials Science, Multidisciplinary; Physics, Applied; Materials Science; Physics; https://oasis.postech.ac.kr/handle/2014.oak/95274; 36257; CURRENT APPLIED PHYSICS, v.19, no.3, pp.219 - 223; ART002447723; 000458392100004; 2-s2.0-85050670616

Availability: https://doi.org/10.1016/j.cap.2018.07.020
https://oasis.postech.ac.kr/handle/2014.oak/95274

Authors: BISWAS, M, BALGARKASHI, A, MAKKAR, RL, BHATNAGAR, A, CHAKRABARTI, S

Subject Terms: Dot-in-a well structure, GaAsN, Emission extension, Reduced FWHM, RTA, Defect elimination, MOLECULAR-BEAM EPITAXY, 1.3 MU-M, QUANTUM DOTS, LUMINESCENCE EFFICIENCY, RAMAN-SCATTERING, PHOTOLUMINESCENCE, GAINNAS, GROWTH, LAYERS, MBE

Relation: JOURNAL OF LUMINESCENCE,194()341-345; 0022-2313;1872-7883; http://dx.doi.org/10.1002/2014GL061257; http://dspace.library.iitb.ac.in/xmlui/handle/100/22947

Availability: https://doi.org/10.1002/2014GL061257
http://dspace.library.iitb.ac.in/xmlui/handle/100/22947

Authors: BARICK, BK, SAROJ, RK, PRASAD, N, SUTAR, DS, DHAR, S

Subject Terms: Chemical vapor deposition, Indium nitride, Growth, X-ray diffraction, MOLECULAR-BEAM EPITAXY, ELECTRON ACCUMULATION, PLANE SAPPHIRE, GAN, POLARIZATION, ENERGY

Relation: JOURNAL OF CRYSTAL GROWTH,490()104-109; 0022-0248;1873-5002; http://dx.doi.org/10.1002/2014GL060820; http://dspace.library.iitb.ac.in/xmlui/handle/100/22819

Availability: https://doi.org/10.1002/2014GL060820
http://dspace.library.iitb.ac.in/xmlui/handle/100/22819

Authors: MURKUTE, P, VATSA, S, GHADI, H, SAHA, S, CHAKRABARTI, S

Subject Terms: ZnO, Photoluminescence, HRXRD, EDX, Acceptor-bound-exciton peak, Complex acceptor, MOLECULAR-BEAM EPITAXY, OPTICAL-PROPERTIES, DEPOSITION, DEVICE, DOPANT, LAYER, GAN

Relation: JOURNAL OF LUMINESCENCE,200()120-125; 0022-2313;1872-7883; http://dx.doi.org/10.1002/2014GL060550; http://dspace.library.iitb.ac.in/xmlui/handle/100/23580

Availability: https://doi.org/10.1002/2014GL060550
http://dspace.library.iitb.ac.in/xmlui/handle/100/23580

Authors: KHIANGTE, KR, RATHORE, JS, SHARMA, V, BHUNIA, S, DAS, S, FANDAN, RS, POKHARIA, RS, LAHA, A, MAHAPATRA, S

Subject Terms: X-Ray-Diffraction, Thin-Films, Misfit Dislocations, Si, Defects, Silicon, Sn, Germanium-Tin Alloy, Group Iv Semiconductors, Molecular Beam Epitaxy, Dislocations

Relation: JOURNAL OF CRYSTAL GROWTH,470,135-142; http://dx.doi.org/10.1016/j.jcrysgro.2017.04.018

Availability: https://doi.org/10.1016/j.jcrysgro.2017.04.018

Authors: Özdemir, Samet, Suyolcu, Y. Eren, Turan, Servet, Aslan, Bülent

Contributors: Anadolu Üniversitesi, Fen Bilimleri Enstitüsü, İleri Teknolojiler Anabilim Dalı, Turan, Servet

Subject Terms: Quantum Dot, Self-Assembled, Molecular Beam Epitaxy, Photoluminescence

File Description: application/pdf

Relation: Applied Surface Science; Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı; https://dx.doi.org/10.1016/j.apsusc.2016.08.162; https://hdl.handle.net/11421/15685; 392; 817; 825

Availability: https://doi.org/10.1016/j.apsusc.2016.08.162
https://hdl.handle.net/11421/15685

Authors: UPADHYAY, S, MANDAL, A, SUBRAHMANYAM, NBV, SINGH, P, SHETE, P, TONGBRAM, B, CHAKRABARTI, S

Subject Terms: Infrared Photodetectors, Dark-Current, Gaas, Photoluminescence, Enhancement, Efficiency, Growth, Iii-V Semiconductor, Ion Implantation, Molecular Beam Epitaxy, Submonolayer Quantum Dots

Relation: JOURNAL OF LUMINESCENCE,171,27-32; http://dx.doi.org/10.1016/j.jlumin.2015.11.007

Availability: https://doi.org/10.1016/j.jlumin.2015.11.007

Authors: Erkus, M., Serincan, Uğur

Contributors: Anadolu Üniversitesi, Fen Fakültesi, Fizik Bölümü

Subject Terms: Molecular Beam Epitaxy (Mbe), Inassb, Raman Spectroscopy, Hrxrd

File Description: application/pdf

Relation: Applied Surface Science; Konferans Öğesi - Uluslararası - Kurum Öğretim Elemanı; https://dx.doi.org/10.1016/j.apsusc.2013.12.046; https://hdl.handle.net/11421/16804; 318; 28; 31

Availability: https://doi.org/10.1016/j.apsusc.2013.12.046
https://hdl.handle.net/11421/16804

Authors: MANOHAR, A, SENGUPTA, S, GHADI, H, CHAKRABARTI, S

Subject Terms: Surface-Emitting Lasers, Power, Iii-V Semiconductor, Molecular Beam Epitaxy, Sub-Monolayer Quantum Dots, Rapid Thermal Annealing, Photoluminescence

Relation: JOURNAL OF LUMINESCENCE, 158,149-152; http://dx.doi.org/10.1016/j.jlumin.2014.09.043; http://dspace.library.iitb.ac.in/jspui/handle/100/17719

Availability: https://doi.org/10.1016/j.jlumin.2014.09.043
http://dspace.library.iitb.ac.in/jspui/handle/100/17719

Authors: Wang, Y., Mei, ZX, Yuan, HT, Du, XL, Zou, J., Jia, JF, Xue, QK, Zhang, Z

Contributors: Kuech, T.F.

Subject Terms: Crystallography, characterization, defects, interfaces, molecular beam epitaxy, semiconducting II-VI materials, Molecular-beam Epitaxy, Thin-films, Nitridation, Polarity, Substrate, Layers, Gan, 291804 Nanotechnology, C1, 780102 Physical sciences

Relation: orcid:0000-0002-9893-8296; orcid:0000-0001-9435-8043

Availability: https://doi.org/10.1016/j.jcrysgro.2007.03.059
https://espace.library.uq.edu.au/view/UQ:129368

Authors: ALEVLİ, MUSTAFA

Contributors: Acharya, Ananta R., Gamage, Sampath, Senevirathna, M. K. Indika, Alevli, Mustafa, Bahadir, Kucukgok, Melton, Andrew G., Ferguson, Ian, Dietz, Nikolaus, Thoms, Brian D.

Subject Terms: Indium nitride, InN, Mass spectrometry, Desorption, Activation energy, MOLECULAR-BEAM EPITAXY, GAN DECOMPOSITION, THIN-FILMS, LAYERS, H-2, AMBIENT, SYSTEM, SENSOR, N-2

Relation: APPLIED SURFACE SCIENCE; https://hdl.handle.net/11424/231472; WOS:000315330300001

Availability: https://doi.org/10.1016/j.apsusc.2012.10.184
https://hdl.handle.net/11424/231472

Authors: MAKHIJANI, RM, CHAKRABARTI, S, SINGH, VA

Subject Terms: Photoluminescence, Temperature Dependence, Inas Quantum Dots, Quantum Confinement Model, Molecular-Beam Epitaxy, Porous Silicon, Optical-Properties, Particle-Size, Shape

Relation: JOURNAL OF LUMINESCENCE, 136401-406; http://dx.doi.org/10.1016/j.jlumin.2012.11.027; http://dspace.library.iitb.ac.in/jspui/handle/100/15271

Availability: https://doi.org/10.1016/j.jlumin.2012.11.027
http://dspace.library.iitb.ac.in/jspui/handle/100/15271

Authors: NAGAR, S, CHAKRABARTI, S

Subject Terms: Zinc Oxide, Plasma Immersion Ion Implantation, Scanning Electron Microscopy, Photoluminescence, Secondary Ion Mass Spectroscopy, P-Type Zno, Molecular-Beam Epitaxy, Fabrication, Activation, Dopant

Relation: JOURNAL OF LUMINESCENCE, 13755-58; http://dx.doi.org/10.1016/j.jlumin.2012.12.043; http://dspace.library.iitb.ac.in/jspui/handle/100/15105

Availability: https://doi.org/10.1016/j.jlumin.2012.12.043
http://dspace.library.iitb.ac.in/jspui/handle/100/15105

Authors: Van Roy, Willem, Roelfsema, RFB, Liu, ZY, Akinaga, H, Miyanishi, S, Manago, T, Borghs, Gustaaf, De Boeck, J

Subject Terms: interfaces, molecular beam epitaxy, magnetic materials, semiconducting gallium arsenide, schottky diodes, electrical spin injection, molecular-beam epitaxy, surface, chemisorption, semiconductor, (111)a, mn

Relation: Journal of Crystal Growth vol:227 pages:852-856; https://lirias.kuleuven.be/handle/123456789/48859; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=CCC&SrcApp=PRODUCT_NAME&SrcURL=WOS_RETURN_URL&CKEY=VANR0852010227JW&DestLinkType=FullRecord&DestApp=CCC&SrcDesc=RETURN_ALT_TEXT&SrcAppSID=APP_SID

Availability: https://lirias.kuleuven.be/handle/123456789/48859
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=CCC&SrcApp=PRODUCT_NAME&SrcURL=WOS_RETURN_URL&CKEY=VANR0852010227JW&DestLinkType=FullRecord&DestApp=CCC&SrcDesc=RETURN_ALT_TEXT&SrcAppSID=APP_SID

Authors: MCCOY, JM, MAKSYM, PA, KAWAMURA, T

Superior Title: Web of Science ; http://webofknowledge.com

Subject Terms: Science & Technology, Physical Sciences, Chemistry, Physical, Physics, Condensed Matter, MOLECULAR-BEAM EPITAXY, TUNNELING MICROSCOPY, RAY-DIFFRACTION, GROWTH, TRANSITION, SI(001), MODEL

File Description: metadata

Relation: SURFACE SCIENCE, 1991, 257 (1-3), pp. 353-367; http://hdl.handle.net/2381/19401

Availability: https://doi.org/10.1016/0039-6028(91)90806-4
http://hdl.handle.net/2381/19401