Contributors: Lamata, Lucas
Subject Terms: distributed Bragg reflector, flip-chip, micro-LED, FDTD, Frenkel–Kontorova model, average distance, finite chain, tensile force, twist map, 2D nanosheet, nanomaterial, layered material, monolayer, medical imaging, CBRAM, synaptic device, AlN, barrier layer, potentiation, depression, logic operations, silicon-on-silica waveguide, contrast ratio, organic electronic devices, VTP, J-V characteristics, photoactive films, quantum protocol, quantum cryptography, quantum key distribution, error threshold, modification of the quantum protocol BB84, molecular beam epitaxy, A3B5, semiconductor nanostructures, quantum dots, photoluminescence, silicon, PEDOT: PSS, heterojunction, reflectance, solar cell, organic solvents, cyclic voltammetry, glucose sensor, graphene oxide, microwave heating, phytochemicals, electroluminescence, InAs, InSb, type II heterojunction, condition-based maintenance, artificial neural network, inverse fluidized bed reactor, hybrid quantum dots, cancer, bioimaging, theranostic, photodynamic therapy, photothermal therapy, quantum dot, confinement, tunable photoexcitation, quantum dot laser, carbon dot, quantum dots photodetector, thema EDItEUR:G Reference, Information and Interdisciplinary subjects:GP Research and information: general, thema EDItEUR:P Mathematics and Science:PH Physics
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Contributors: Suzdaltsev, Andrey, Rakhmanova, Oksana
Subject Terms: composite, molecular dynamics, magnesium, aluminum, mechanical properties, Al composite, Fe40Al intermetallic, mechanical milling, damage, elastic modulus, microindentation, metal matrix composite, high temperatures, 7075 alloy, lithium-ion battery, silicon, halide melt, electrodeposition, silicon fibers, nanotubes, nanoneedles, composite anode, tungsten, rhenium, dealloying, anodic polarization, developed surface, catalyst for HER, joining of CFRT/metal, hybrid technology, pin geometry, continuous fiber reinforced thermoplastics, electric field, perovskite, polaron, proton, metal-matrix composite, nano-alumina, molten salt synthesis, zinc, aluminum and magnesium coating, HC340LAD + ZM, spot welding, corrosion, GaN/AlN, molecular beam epitaxy, CVD graphene, buffer layer, gallium nitride, GaN-on-Si technology, nanoparticles, TiO2, oxygen vacancies, nuclear reactions, deuterium probes, silicon carbide, electrodeposited silicon, composite material, anode material, Coulombic efficiency, high temperature, simulation, rheology, neural network, relaxation, rheological behavior, flow stress, Al-Mg alloy, Al-Mg-Sc-Zr alloy, thema EDItEUR:G Reference, Information and Interdisciplinary subjects:GP Research and information: general, thema EDItEUR:P Mathematics and Science:PH Physics
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Contributors: Corradi, Gábor, Kovács, László
Subject Terms: lithium niobate, small polaron hopping, transient absorption, mode-locked laser, nonlinear mirror mode locking, lithium tantalate, crystal structure, chemical composition, ferroelectrics, second harmonic generation, lead-free piezoelectrics, intrinsic defects, extrinsic defects, elemental doping, ferromagnetism, diluted-magnetic oxides, LiNbO3, LiTaO3, oxide crystals, lanthanides, luminescence, LNOI, ferroelectric domains, domain-wall conduction, AFM, thin film lithium niobate, TFLN, x-cut LN, domain walls, piezoresponse force microscopy, second-harmonic generation, Raman scattering, electro-optics, whispering gallery resonators, polarons, photorefractivity, Marcus-Holstein’s theory, Monte Carlo simulations, strontium titanate, self-trapped electrons, oxygen vacancies, defects, impurity, intrinsic defect, paramagnetic ion, electron paramagnetic resonance, electron nuclear double resonance, lithium vacancy, lithium, niobate, epitaxy, thin film, liquid phase epitaxy, molecular beam epitaxy, sputtering, pulsed laser deposition, chemical vapor deposition, lithium niobate-tantalate, piezoelectric, acoustic, high-temperature, sensor, Q-factor, BAW resonator, parametric down-conversion, photon-pair generation, extended phase matching, microring resonator, varFDTD, lithium tantalate thin film, electro-optical devices, lattice location, radiation damage, ion beam analysis, hyperfine interactions, charge localization, lattice deformation, optical response, density-functional theory, Bethe-Salpeter equation, nanoparticles, nanopowders, X-ray diffraction, Raman spectroscopy, temperature dependence of electroconductivity, bipolarons, defect structure and generation, Li diffusion, bulk crystals, thin films, nanocrystals, thema EDItEUR:G Reference, Information and Interdisciplinary subjects:GP Research and information: general
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Contributors: Tanabe, Katsuaki
Subject Terms: semiconductor, interface, wafer bonding, frequency conversion, optoelectronics, photonic device, solar cell, photonic integrated circuit, exciton harvesting, ternary blend solar cells, non-fullerene, energy transfer, surface energy, dye-sensitized solar cell, counter electrode, bifacial, platinum, ethylene glycol, perovskite solar cells, surface plasmon polaritons, plasmonic nanostructures, absorption enhancement, FDTD simulations, titanium dioxide, zinc oxide, core–shell nanorods, mist chemical vapor deposition, intermediate-band solar cell, quantum dot, molecular-beam epitaxy, porous silicon, surface passivation, anodic oxidation, broadband light harvesting, three-dimensional Schottky junction, perovskite solar cell, photoresponsivity, thema EDItEUR:G Reference, Information and Interdisciplinary subjects:GP Research and information: general
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Contributors: Peña, Victor Pacheco
Subject Terms: W band, Schottky Diode Detectors, ZBD modeling, wire bonding, flip-chip, Terahertz radar, radar cross-section, signal-to-noise ratio, adaptive range gates, cascaded doubler, quadrupler, Schottky varactor, hybrid integrated circuit, terahertz spectroscopy, optical delay line, correction, optical encoder, terahertz spectra, terahertz metrology, bias, sub-harmonic mixer, anti-series, Schottky diode, conversion loss, terahertz wave generation, InGaAs, molecular beam epitaxy, time-domain spectroscopy, photoconductive antenna, open stone relics, hollowing, weathered, preservation of cultural heritage, THz-TDS, rubber, vulcanization, silica dispersion, terahertz imaging, light field imaging, synthetic aperture imaging, image distortion, resolving power, THz detector, rectangular inset-feed patch antenna, catadioptric horn-like lens, CMOS process, resonances, periodic waveguides, reflection phases, topological properties, oscillator, THz, high output power, CMOS, terahertz waves, honeycomb sandwiches, foreign materials, time-of-flight, electric field, thema EDItEUR:G Reference, Information and Interdisciplinary subjects:GP Research and information: general
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Contributors: Piotrowska, Anna B., Kamińska, Eliana, Wojtasiak, Wojciech
Subject Terms: GaN HEMT, self-heating effect, microwave power amplifier, thermal impedance, thermal time constant, thermal equivalent circuit, GaN, crystal growth, ammonothermal method, HVPE, ion implantation, gallium nitride, thermodynamics, ultra-high-pressure annealing, diffusion, diffusion coefficients, molecular beam epitaxy, nitrides, laser diode, tunnel junction, LTE, AlN, AlGaN/GaN, interface state density, conductance-frequency, MISHEMT, gallium nitride nanowires, polarity, Kelvin probe force microscopy, selective area growth, selective epitaxy, AlGaN/GaN heterostructures, edge effects, effective diffusion length, MOVPE, nanowires, AlGaN, LEDs, growth polarity, thema EDItEUR:T Technology, Engineering, Agriculture, Industrial processes:TB Technology: general issues
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Contributors: Casalino, Maurizio, Thirumalai, Jagannathan
Subject Terms: graphene, 2d materials, luminescence, optoelectronics, silicon, molecular beam epitaxy, thema EDItEUR:T Technology, Engineering, Agriculture, Industrial processes:TT Other technologies and applied sciences:TTB Applied optics
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Contributors: Nguyen, Hieu Pham Trung
Subject Terms: Liquid phase deposition method, InGaN/GaN light-emitting diode, silver nanoparticle, zinc oxide, localized surface plasmon, β-Ga2O3, III-Nitrides, monoclinic, hexagonal arrangement, high-power, current distribution, vertical structure LED, blue organic light emitting diodes, transport materials, host-dopant, nanoparticles, luminescence, non-stoichiometric ZnxAgyInS1.5+x+0.5y nanocrystals, photoluminescence properties, tunable fluorescence emission, one-pot approach, perovskite light-emitting diodes, three-step spin coating, hole transport layer, PEDOT:PSS/MoO3-ammonia composite, μLED displays, μLEDs, GaN nanowires, core-shell structure, ultraviolet (UV) emitter, surface plasmon, Pt nanoparticles, hole-pattern, photon emission efficiency, distributed Bragg reflectors, gratings, GaN-based lasers, linewidth, epsilon-near-zero, wideband absorber, plasmon mode, Brewster mode, visible light communication, photonic crystals, flip-chip LED, Purcell effect, light extraction efficiency, nanostructured materials, surface/interface properties, nanostructured light-emitting devices, physical mechanism, surface/interface modification, surface/interface control, micro-scale light emitting diode, sapphire substrate, encapsulation, compound semiconductor, nanostructure, ultraviolet, light-emitting diode (LED), molecular beam epitaxy, GaN, AlN, photonic nanojet, photonic nanojet array, self-assembly, template-assisted self-assembly, patterning efficiency, III-nitride thin film, nanostructures, ultraviolet emitters, surface passivation, luminescence intensity, thema EDItEUR:T Technology, Engineering, Agriculture, Industrial processes:TB Technology: general issues:TBX History of engineering and technology
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Authors: Grasser, Tibor, Filipovic, Lado
Subject Terms: MOSFET, total ionizing dose (TID), low power consumption, process simulation, two-dimensional material, negative-capacitance, power consumption, technology computer aided design (TCAD), thin-film transistors (TFTs), band-to-band tunneling (BTBT), nanowires, inversion channel, metal oxide semiconductor field effect transistor (MOSFET), spike-timing-dependent plasticity (STDP), field effect transistor, segregation, systematic variations, Sentaurus TCAD, indium selenide, nanosheets, technology computer-aided design (TCAD), high-? dielectric, subthreshold bias range, statistical variations, fin field effect transistor (FinFET), compact models, non-equilibrium Green’s function, etching simulation, highly miniaturized transistor structure, compact model, silicon nanowire, surface potential, Silicon-Germanium source/drain (SiGe S/D), nanowire, plasma-aided molecular beam epitaxy (MBE), phonon scattering, mobility, silicon-on-insulator, drain engineered, device simulation, variability, semi-floating gate, synaptic transistor, neuromorphic system, theoretical model, CMOS, ferroelectrics, tunnel field-effect transistor (TFET), SiGe, metal gate granularity, buried channel, ON-state, bulk NMOS devices, ambipolar, piezoelectrics, tunnel field effect transistor (TFET), FinFETs, polarization, field-effect transistor, line edge roughness, random discrete dopants, radiation hardened by design (RHBD), low energy, flux calculation, doping incorporation, low voltage, topography simulation, MOS devices, low-frequency noise, high-k, layout, level set, process variations, subthreshold, metal gate stack, electrostatic discharge (ESD), thema EDItEUR:T Technology, Engineering, Agriculture, Industrial processes:TB Technology: general issues:TBX History of engineering and technology, TA1-2040, T1-995
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Contributors: Zhong, Miao
Subject Terms: molecular beam epitaxy, thin films, monte carlo simulation, x-ray diffraction, photoluminescence, atomic force microscopy, thema EDItEUR:T Technology, Engineering, Agriculture, Industrial processes:TJ Electronics and communications engineering:TJF Electronics engineering:TJFD Electronic devices and materials
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