Authors: Hudait, Mantu K., Murphy-Armando, Felipe, Saladukha, Dzianis, Clavel, Michael B., Goley, Patrick S., Maurya, Deepam, Bhattacharya, Shuvodip, Ochalski, Tomasz J.
Subject Terms: Engineering, Electrical & Electronic, Materials Science, Multidisciplinary, germanium, epitaxy, molecular beam epitaxy, heterostructure, laser, MONOLITHIC INTEGRATION, MISFIT DISLOCATIONS, LIGHT-EMISSION, GE, SI, SILICON, GAP, GENERATION, DEPENDENCE
File Description: Pages 4535-4547; 13 page(s); application/pdf
Relation: http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000711759300029&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=930d57c9ac61a043676db62af60056c1; http://hdl.handle.net/10919/108777; https://doi.org/10.1021/acsaelm.1c00660; 10; Hudait, Mantu [0000-0002-9789-3081]
Authors: Kusaba, Akira, Li, Guanchen, Kempisty, Pawel, von Spakovsky, Michael R., Kangawa, Yoshihiro
Contributors: Mechanical Engineering
Subject Terms: metalorganic vapor phase epitaxy, gallium nitride, density functional theory calculations, steepest-entropy-ascent quantum thermodynamics
File Description: application/pdf
Relation: Kusaba, A.; Li, G.; Kempisty, P.; von Spakovsky, M.R.; Kangawa, Y. CH4 Adsorption Probability on GaN(0001) and (000−1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films. Materials 2019, 12, 972.; http://hdl.handle.net/10919/88769; https://doi.org/10.3390/ma12060972
Authors: Kusaba, Akira, Li, Guanchen, von Spakovsky, Michael R., Kangawa, Yoshihiro, Kakimoto, Koichi
Contributors: Mechanical Engineering
Subject Terms: metalorganic vapor phase epitaxy, gallium nitride, chemical adsorption, surface reconstruction, density functional theory calculations, steepest-entropy-ascent quantum thermodynamics
File Description: application/pdf
Relation: Kusaba, A.; Li, G.; von Spakovsky, M.R.; Kangawa, Y.; Kakimoto, K. Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics. Materials 2017, 10, 948.; http://hdl.handle.net/10919/79351; https://doi.org/10.3390/ma10080948
Authors: Jain, Nikhil, Zhu, Yizheng, Maurya, Deepam, Varghese, Ronnie, Priya, Shashank, Hudait, Mantu K.
Contributors: Electrical and Computer Engineering, Virginia Tech. Bradley Department of Electrical and Computer Engineering. Advanced Devices & Sustainable Energy Laboratory (ADSEL), Virginia Tech. Center for Energy Harvesting Materials and Systems (CEHMS)
Subject Terms: Germanium, Elemental semiconductors, Epitaxy, Thin film deposition, X-ray photoelectron spectroscopy
File Description: 9 pages; application/pdf
Relation: Jain, N., Zhu, Y., Maurya, D., Varghese, R., Priya, S., Hudait, M. K. (2014). Interfacial band alignment and structural properties of nanoscale TiO2 thin films for integration with epitaxial crystallographic oriented germanium. Journal of Applied Physics, 115(2). doi:10.1063/1.4861137; http://hdl.handle.net/10919/51972; http://scitation.aip.org/content/aip/journal/jap/115/2/10.1063/1.4861137; https://doi.org/10.1063/1.4861137
Contributors: Electrical and Computer Engineering, Virginia Tech. Bradley Department of Electrical and Computer Engineering, Virginia Tech. Center for Energy Harvesting Materials and Systems (CEHMS)
Subject Terms: Germanium, Elemental semiconductors, Epitaxy, X-ray photoelectron spectroscopy, MOSFETs
File Description: 7 pages; application/pdf
Relation: Hudait, M. K.Zhu, Y.Jain, N.Maurya, D.Zhou, Y.Priya, S.(2013). Quasi-zero lattice mismatch and band alignment of BaTiO3 on epitaxial (110)Ge. Journal of Applied Physics, 114(2). doi:10.1063/1.4813226; http://hdl.handle.net/10919/51977; http://scitation.aip.org/content/aip/journal/jap/114/2/10.1063/1.4813226; https://doi.org/10.1063/1.4813226
Authors: Hudait, Mantu K., Zhu, Yizheng, Maurya, Deepam, Priya, Shashank, Patra, Prabir K., Ma, Anson W. K., Aphale, Ashish, Macwan, Isaac
Contributors: Electrical and Computer Engineering, Virginia Tech. Bradley Department of Electrical and Computer Engineering. Advanced Devices & Sustainable Energy Laboratory (ADSEL), Virginia Tech. Center for Energy Harvesting Materials and Systems (CEHMS), University of Bridgeport. Department of Biomedical Engineering and Department of Mechanical Engineering, University of Connecticut. Department of Chemical and Biomolecular Engineering and Institute of Materials Science, University of Bridgeport. Department of Electrical and Computer Engineering
Subject Terms: Germanium, Ozone, Elemental semiconductors, Epitaxy, III-V semiconductors
File Description: 9 pages; application/pdf
Relation: Hudait, M. K., Zhu, Y., Maurya, D., Priya, S., Patra, P. K., Ma, A. W. K., Aphale, A., Macwan, I. (2013). Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy. Journal of Applied Physics, 113(13). doi:10.1063/1.4799367; http://hdl.handle.net/10919/51973; http://scitation.aip.org/content/aip/journal/jap/113/13/10.1063/1.4799367; https://doi.org/10.1063/1.4799367
Authors: Hudait, Mantu K., Zhu, Yan
Contributors: Electrical and Computer Engineering, Virginia Tech. Bradley Department of Electrical and Computer Engineering. Advanced Devices & Sustainable Energy Laboratory (ADSEL)
Subject Terms: Germanium, Elemental semiconductors, Epitaxy, Band gap, III-V semiconductors
File Description: 7 pages; application/pdf
Relation: Hudait, Mantu K., Zhu, Yan (2013). Energy band alignment of atomic layer deposited HfO2 oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers. Journal of Applied Physics, 113(11). doi:10.1063/1.4795284; http://hdl.handle.net/10919/51971; http://scitation.aip.org/content/aip/journal/jap/113/11/10.1063/1.4795284; https://doi.org/10.1063/1.4795284
Authors: Wang, Zhiguang, Viswan, Ravindranath, Hu, Bolin, Li, Jiefang, Harris, Vincent G., Viehland, Dwight D.
Contributors: Materials Science and Engineering (MSE), Virginia Tech. Department of Materials Science and Engineering, Northeastern University. Department of Electrical and Computer Engineering
Subject Terms: Ferromagnetism, Magnetoelectric effects, Magnetic films, Magnetic force microscopy, Epitaxy
File Description: 5 pages; application/pdf
Relation: Wang, Zhiguang, Viswan, Ravindranath, Hu, Bolin, Li, Jie-Fang, Harris, V. G., Viehland, D. (2012). Domain rotation induced strain effect on the magnetic and magneto-electric response in CoFe2O4/Pb(Mg,Nb)O-3-PbTiO3 heterostructures. Journal of Applied Physics, 111(3). doi:10.1063/1.3684546; http://hdl.handle.net/10919/52485; http://scitation.aip.org/content/aip/journal/jap/111/3/10.1063/1.3684546; https://doi.org/10.1063/1.3684546
Authors: Songprakob, Wantana, Zallen, Richard H., Tsu, D. V., Liu, W. K.
Contributors: Physics, Virginia Tech. Physics Department, Energy Conversion Devices, Incorporated, IQE Incorporated
Subject Terms: Doping, Hole mobility, Plasmons, Optical absorption, Epitaxy
File Description: 8 pages; application/pdf
Relation: Songprakob, W., Zallen, R., Tsu, D. V., Liu, W. K. (2002). Intervalenceband and plasmon optical absorption in heavily doped GaAs : C. Journal of Applied Physics, 91(1), 171-177. doi:10.1063/1.1424050; http://hdl.handle.net/10919/52395; http://scitation.aip.org/content/aip/journal/jap/91/1/10.1063/1.1424050; https://doi.org/10.1063/1.1424050
Authors: Jain, Nikhil
Contributors: Electrical and Computer Engineering, Hudait, Mantu K., Lester, Luke F., Heremans, Jean J., Plassmann, Paul E., Orlowski, Mariusz Kriysztof
Subject Terms: III–V-on-Si solar cells, multijunction solar cells, heterogeneous integration, solar cell modeling, GaAs-on-Si epitaxy, Ge-on-Si epitaxy
File Description: ETD; application/pdf
Relation: vt_gsexam:5046; http://hdl.handle.net/10919/52045
Availability: http://hdl.handle.net/10919/52045
Authors: Clavel, Michael Brian
Contributors: Electrical and Computer Engineering, Hudait, Mantu K., Heremans, Jean J., Orlowski, Marius K.
Subject Terms: Heterogeneous Integration, Photonics, Tunnel Field-Effect Transistor, InGaAs, Germanium, Tensile Strain, Silicon, Molecular Beam Epitaxy
File Description: application/pdf
Relation: etd-05192016-154719; http://hdl.handle.net/10919/78129; http://scholar.lib.vt.edu/theses/available/etd-05192016-154719/
Availability:
http://hdl.handle.net/10919/78129
http://scholar.lib.vt.edu/theses/available/etd-05192016-154719/
Authors: Zhu, Yan
Contributors: Electrical and Computer Engineering, Hudait, Mantu K., Tao, Chenggang, Agah, Masoud, Manteghi, Majid, Lester, Luke F.
Subject Terms: Tunnel field-effect-transistor, mixed As/Sb and Ge heterostructures, molecular beam epitaxy, heterointerface engineering, high temperature reliability analysis, structure and device characterization
File Description: ETD; application/pdf
Relation: vt_gsexam:2599; http://hdl.handle.net/10919/47791
Availability: http://hdl.handle.net/10919/47791
Authors: Banerjee, Rajarshi
Contributors: Physics
Subject Terms: reconstruction, silicon, thin films, RBS, interface, surface physics, alkali metals, cesium, ordered, ordered growth, epitaxy, ion scattering, semiconductors, metalization, characterization, Rutherford, boronated, doped, QC
File Description: application/pdf
Relation: eprint:260; http://hdl.handle.net/10919/71500
Availability: http://hdl.handle.net/10919/71500
Authors: Songprakob, W., Zallen, Richard H., Liu, W. K., Bacher, K. L.
Contributors: Physics, Virginia Tech
Subject Terms: molecular-beam epitaxy, heterojunction bipolar-transistors, effective, hall factor, carbon tetrabromide, optical-absorption, raman-scattering, modes, reflectance, spectra, reflectivity, Physics
File Description: application/pdf
Relation: Songprakob, W; Zallen, R; Liu, WK; et al., Aug 15, 2000. "Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs : C," PHYSICAL REVIEW B 62(7): 4501-4510. DOI:10.1103/PhysRevB.62.4501; http://hdl.handle.net/10919/25382; https://doi.org/10.1103/PhysRevB.62.4501
Authors: Sauncy, T., Holtz, M., Zallen, Richard H.
Contributors: Physics, Virginia Tech
Subject Terms: active acoustic phonons, molecular-beam epitaxy, hydrostatic-pressure, raman-scattering, alas, inp, physics, condensed matter
File Description: application/pdf
Relation: Sauncy, T.; Holtz, M.; Zallen, R., "Effect of pressure on a defect-related band-resonant vibrational mode in implanation-disordered GaAs," Phys. Rev. B 50, 10702 DOI: http://dx.doi.org/10.1103/PhysRevB.50.10702; http://hdl.handle.net/10919/47831; http://journals.aps.org/prb/abstract/10.1103/PhysRevB.50.10702; https://doi.org/10.1103/PhysRevB.50.10702