Authors: 中村, 泰樹, ナカムラ, タイジュ, 川畑, 公佑, カワバタ, コウスケ, 迫田, 理久, サコダ, リク, 間野, 高明, マノ, タカアキ, 野田, 武司, ノダ, タケシ, Ikari, Tetsuo, 碇, 哲雄, イカリ, テツオ, Fukuyama, Atsuhiko, 福山, 敦彦, フクヤマ, アツヒコ, Nakamura, Taiju, Kawabata, Kosuke, Sakoda, Riku, Mano, Takaaki, Noda, Takeshi
Subject Terms: Quantum dots, GaAs, AlGaAs, Droplet epitaxy, Photoluminescence, Excitation light intensity
File Description: application/pdf
Relation: 宮崎大学工学部紀要; 50; 69; 74; Memoirs of Faculty of Engineering, University of Miyazaki; AA00732558; https://miyazaki-u.repo.nii.ac.jp/record/6407/files/Engineering_50_p69-p74.pdf
Authors: 宮内, 雄大, ミヤウチ, ユウダイ, Miyauchi, Yudai, 中村, 泰樹, 川畑, 公佑, 間野, 高明, マノ, タカアキ, Mano, Takaaki, 野田, 武司, Ikari, Tetsuo, 碇, 哲雄, イカリ, テツオ, Fukuyama, Atsuhiko, 福山, 敦彦, フクヤマ, アツヒコ, Nakamura, Taiju, Kawabata, Kosuke, Noda, Takeshi
Subject Terms: Quantum dots, GaAs, AlGaAs, Droplet epitaxy, Photoluminescence, Blue shift
File Description: application/pdf
Relation: 宮崎大学工学部紀要; 49; 73; 77; Memoirs of Faculty of Engineering, University of Miyazaki; AA00732558; https://miyazaki-u.repo.nii.ac.jp/record/6203/files/Engineering_49_p73.pdf
Authors: 江添, 悠平, エゾエ, ユウヘイ, 宮内, 雄大, ミヤウチ, ユウダイ, 間野, 高明, マノ, タカアキ, Ikari, Tetsuo, 碇, 哲雄, イカリ, テツオ, Fukuyama, Atsuhiko, 福山, 敦彦, フクヤマ, アツヒコ, Ezoe, Yuhei, Miyauchi, Yudai, Mano, Takaaki
Subject Terms: Quantum dots, GaAs, AlGaAs, Droplet epitaxy, Photoluminescence, Blue shift
File Description: application/pdf
Relation: 宮崎大学工学部紀要; 48; 51; 54; Memoirs of Faculty of Engineering, University of Miyazaki; AA00732558; https://miyazaki-u.repo.nii.ac.jp/record/5869/files/51-54.pdf
Authors: 岩元, 杏里, イワモト, アンリ, 石塚, 史典, イシツカ, フミノリ, 大堀, 大介, オオホリ, ダイスケ, Ohori, Daisuke, 間野, 高明, マノ, タカアキ, Ikari, Tetsuo, 碇, 哲雄, イカリ, テツオ, Fukuyama, Atsuhiko, 福山, 敦彦, フクヤマ, アツヒコ, Iwamoto, Anri, Ishitsuka, Fuminori, Mano, Takaaki
Subject Terms: Quantum dots, GaAs, AlGaAs, Droplet epitaxy, Photoluminescence
File Description: application/pdf
Relation: 宮崎大学工学部紀要; 46; 85; 88; Memoirs of Faculty of Engineering, University of Miyazaki; AA00732558; https://miyazaki-u.repo.nii.ac.jp/record/5206/files/p85.pdf
Authors: 仲川, 豪志, ナカガワ, ゴウシ, Maeda, Koji, 前田, 幸治, マエダ, コウジ, Maeda, Kouji, 鈴木, 秀俊, スズキ, ヒデトシ, Suzuki, Hidetoshi, 境, 健太郎, サカイ, ケンタロウ, Sakai, Kentaro, Nakagawa, Goushi
Subject Terms: nanowire, NWs, GaAs, Au-assisted, pulsed–jet gas epitaxy, photoluminescence
File Description: application/pdf
Relation: 宮崎大学工学部紀要; 46; 109; 112; Memoirs of Faculty of Engineering, University of Miyazaki; AA00732558; https://miyazaki-u.repo.nii.ac.jp/record/5212/files/p109.pdf
Authors: 伊東, 大樹, イトウ, ダイキ, Ito, Daiki, 太刀掛, 弘晃, タチカケ, ヒロアキ, 鈴木, 秀俊, スズキ, ヒデトシ, Suzuki, Hidetoshi, Fukuyama, Atsuhiko, 福山, 敦彦, フクヤマ, アツヒコ, Ikari, Tetsuo, 碇, 哲雄, イカリ, テツオ, Tachikake, Hiroaki
Subject Terms: Rotational twin formation in GaAs, GaAs on Si, molecular beam epitaxy, hetero-epitaxy
File Description: application/pdf
Relation: 宮崎大学工学部紀要; 42; 19; 22; Memoirs of Faculty of Engineering, University of Miyazaki; AA00732558; https://miyazaki-u.repo.nii.ac.jp/record/2870/files/engineering19-22.pdf
Authors: 芳賀, 章博, ハガ, アキヒロ, Haga, Akihiro, 貞任, 萌, サダト, ハジメ, Sadato, Hajime, 原口, 智宏, ハラグチ, トモヒロ, Haraguchi, Tomohiro, 鈴木, 秀俊, スズキ, ヒデトシ, Suzuki, Hidetoshi, Fukuyama, Atsuhiko, 福山, 敦彦, フクヤマ, アツヒコ, 尾関, 雅志, オゼキ, マサシ, Ozeki, Masashi, Ikari, Tetsuo, 碇, 哲雄, イカリ, テツオ
Subject Terms: Atomic Layer epitaxy, gas flow sequence, Gallium arsenide nitride, Residual Impurities, selflimiting mechanism
File Description: application/pdf
Relation: 宮崎大学工学部紀要; 42; 27; 30; Memoirs of Faculty of Engineering, University of Miyazaki; AA00732558; https://miyazaki-u.repo.nii.ac.jp/record/2888/files/engineering27-30.pdf
Subject Terms: Atomic-layer-epitaxy, Self-limiting mechanism, γ-Al2O3, Adsorption
File Description: application/pdf
Relation: 宮崎大学工学部紀要; 39; 117; 124; Memoirs of Faculty of Engineering, University of Miyazaki; AA00732558; https://miyazaki-u.repo.nii.ac.jp/record/2963/files/engineering39-19.pdf
Authors: 藤田, 陽, フジタ, アキラ, 川野, 雅史, カワノ, マサシ, 陣内, 宏基, ジンナイ, ヒロノリ, Maeda, Koji, 前田, 幸治, マエダ, コウジ, Maeda, Kouji, 尾関, 雅志, オゼキ, マサシ, Ozeki, Masashi, Fujita, Akira, Kawano, Masashi, Jinnai, Hironori
Subject Terms: atomic layer epitaxy, GaAs, homoepitaxial growth, Photoluminescence, Raman scattering, Coupled Plasmon-LO-Phonon modes
File Description: application/pdf
Relation: 宮崎大学工学部紀要; 37; 197; 200; Memoirs of Faculty of Engineering, University of Miyazaki; AA00732558; https://miyazaki-u.repo.nii.ac.jp/record/2689/files/KJ00005016021.pdf
Authors: 原口, 智宏, ハラグチ, トモヒロ, Haraguchi, Tomohiro, 尾関, 雅志, オゼキ, マサシ, Ozeki, Masashi, 藤田, 陽, フジタ, アキラ, Fujita, Akira
Subject Terms: Atomic layer epitaxy, Inorganic compounds, Magnetic materials
File Description: application/pdf
Relation: 宮崎大学工学部紀要; 36; 37; 41; Memoirs of Faculty of Engineering, University of Miyazaki; AA00732558; https://miyazaki-u.repo.nii.ac.jp/record/2509/files/KJ00004682864.pdf
Authors: 藤田, 陽, フジタ, アキラ, 尾関, 雅志, オゼキ, マサシ, Ozeki, Masashi, 原口, 智宏, ハラグチ, トモヒロ, Haraguchi, Tomohiro, Fujita, Akira
Subject Terms: self-limiting mechanism, atomic layer epitaxy (ALE), GaMnAs, MnAs
File Description: application/pdf
Relation: 宮崎大学工学部紀要; 36; 43; 47; Memoirs of Faculty of Engineering, University of Miyazaki; AA00732558; https://miyazaki-u.repo.nii.ac.jp/record/2510/files/KJ00004682865.pdf
Authors: 安田, 慎太郎, ヤスダ, シンタロウ, 大村, 拓泰, オオムラ, ヒロヤス, 黒川, 英太郎, クロカワ, エイタロウ, 尾関, 雅志, オゼキ, マサシ, Ozeki, Masashi, Ikari, Tetsuo, 碇, 哲雄, イカリ, テツオ, Maeda, Koji, 前田, 幸治, マエダ, コウジ, Maeda, Kouji, Yasuda, Shintaro, Omura, Hiroyasu, Kurokawa, Eitaro
Subject Terms: Photoluminescence, GaAs, Molecular beam epitaxy, conduction band tailing, Fermi energy, line-shape analysis
File Description: application/pdf
Relation: 宮崎大学工学部紀要; 35; 131; 135; Memoirs of Faculty of Engineering, University of Miyazaki; AA00732558; https://miyazaki-u.repo.nii.ac.jp/record/2459/files/KJ00004439501.pdf
Authors: 原口, 智宏, ハラグチ, トモヒロ, Haraguchi, Tomohiro, 尾関, 雅志, オゼキ, マサシ, Ozeki, Masashi, 武内, 健, タケウチ, タケシ, Takeuchi, Takeshi
Subject Terms: Growth method, Atomic layer epitaxy, Semiconducting, III-V materials
File Description: application/pdf
Relation: 宮崎大学工学部紀要; 34; 31; 36; Memoirs of Faculty of Engineering, University of Miyazaki; AA00732558; https://miyazaki-u.repo.nii.ac.jp/record/2389/files/KJ00003579353.pdf
Authors: Ozeki, Masashi, Shimizu, Yuichiro
Subject Terms: Growth method, Chemical beam epitaxy, Semiconducting III-V materials
File Description: application/pdf
Relation: 宮崎大学工学部紀要; 33; 87; 92; Memoirs of Faculty of Engineering, University of Miyazaki; AA00732558; https://miyazaki-u.repo.nii.ac.jp/record/2980/files/KJ00002428227.pdf
Authors: Fukuyama, Atsuhiko, 福山, 敦彦, フクヤマ, アツヒコ, 境, 健太郎, サカイ, ケンタロウ, Sakai, Kentaro, 明石, 義人, アカシ, ヨシト, Akashi, Yoshito, Ikari, Tetsuo, 碇, 哲雄, イカリ, テツオ, Fukuhara, Hironori, Tanaka, Shin-ichi, Memon, Aftab A.
Subject Terms: III-V semiconductors, Epitaxy, Aluminium, Piezoelectric fields, Photothermal effects
File Description: application/pdf
Relation: Journal of Applied Physics; 90; 4385; 4391; https://miyazaki-u.repo.nii.ac.jp/record/4592/files/ikr_5441.pdf
Authors: 吉野, 賢二, ヨシノ, ケンジ, Yoshino, Kenji, 丸岡, 大介, マルオカ, ダイスケ, Ikari, Tetsuo, 碇, 哲雄, イカリ, テツオ, 仁木, 栄, ニキ, シゲル, Niki, Shigeru, 山田, 昭政, ヤマダ, アキマサ, Yamada, Akimasa, Maruoka, Daisuke, Fons, Paul J.
Subject Terms: Epitaxy, Band gap, Liquid helium, Electric measurements, Electron hole recombination
File Description: application/pdf
Relation: Applied Physics Letters; 77; 259; 261; https://miyazaki-u.repo.nii.ac.jp/record/4408/files/ikr_5256.pdf
Authors: 吉野, 賢二, ヨシノ, ケンジ, Yoshino, Kenji, Yokoyama, Hirosumi, 横山, 宏有, ヨコヤマ, ヒロスミ, Maeda, Koji, 前田, 幸治, マエダ, コウジ, Maeda, Kouji, Ikari, Tetsuo, 碇, 哲雄, イカリ, テツオ, Fukuyama, Atsuhiko, 福山, 敦彦, フクヤマ, アツヒコ, 山田, 昭政, ヤマダ, アキマサ, Yamada, Akimasa, 仁木, 栄, ニキ, シゲル, Niki, Shigeru, Fons, Paul. J.
Subject Terms: Band gap, Cancer, Copper, Epitaxy, III-V semiconductors
File Description: application/pdf
Relation: Journal of Applied Physics; 86; 4354; 4359; https://miyazaki-u.repo.nii.ac.jp/record/4427/files/ikr_5276.pdf
Authors: Arai, Masakazu, 荒井, 昌和, アライ, マサカズ, Nakagawa, Shota, Hombu Koki, Hirata, Yasushi, Maeda, Koji, 前田, 幸治, マエダ, コウジ, Maeda, Kouji
Subject Terms: A3. Low press, Metalorganic vapor phase epitaxy, B2. Semiconducting III-V materials, A1. Doping, A1. Crystal morphology, A1. Atomic force microscopy, B3. Infrared devices
File Description: application/pdf
Relation: publisher's web site; https://doi.org/10.1016/j.jcrysgro.2023.127274; Journal of Crystal Growth; 617; 127274; https://miyazaki-u.repo.nii.ac.jp/record/2000001/files/1-s2.0-S0022024823002002-main.pdf