Authors: Cherns, D., Webster, R. F., Novikov, S. V., Foxon, C. T., Fischer, A. M., Ponce, F. A., Haigh, S. J.
Superior Title: Cherns , D , Webster , R F , Novikov , S V , Foxon , C T , Fischer , A M , Ponce , F A & Haigh , S J 2014 , ' Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy ' , Nanotechnology , vol. 25 , no. 21 , 215705 . https://doi.org/10.1088/0957-4484/25/21/215705
Subject Terms: InGaN nanorods, transmission electron microscopy, molecular beam epitaxy, EDX mapping, core-shell structures, spinodal decomposition, INGAN, ALLOYS
Authors: Sun, Xiao, Vogiatzis, Nikolaos, Rorison, Judy M.
Superior Title: Sun , X , Vogiatzis , N & Rorison , J M 2013 , ' Theoretical Study on Dilute Nitride 1.3 mu m Quantum Well Semiconductor Optical Amplifiers: Incorporation of N Compositional Fluctuations ' , IEEE Journal of Quantum Electronics , vol. 49 , no. 10 . https://doi.org/10.1109/JQE.2013.2278196
Subject Terms: /dk/atira/pure/core/keywords/faculty_of_enigneering/photonics_and_quantum, Photonics and Quantum, GaInNAs, SOA, QD-like fluctuations, WDM, multi-wavelength channel amplifier, MOLECULAR-BEAM EPITAXY, WAVELENGTH, DIODES, LASERS, GAAS
Authors: Cherns, D., Webster, R. F., Novikov, S. V., Foxon, C. T., Fischer, A. M., Ponce, F. A.
Superior Title: Cherns , D , Webster , R F , Novikov , S V , Foxon , C T , Fischer , A M & Ponce , F A 2013 , ' The growth of In0.5Ga0.5N and InN layers on (111)Si using nanorod intermediate arrays ' , Journal of Crystal Growth , vol. 384 , pp. 55-60 . https://doi.org/10.1016/j.jcrysgro.2013.09.012
Subject Terms: Nanostructures, Characterisation, Molecular beam epitaxy, Nitrides, Semiconducting III-V materials, Solar cells