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Academic Journal

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Relation: Akchurin, N., Altopp, G., Burkle, B., Frey, W., Heintz, U., Hinton, N., Hoeferkamp, M. R., Kazhykarim, Y., Kuryatkov, V., Mengke, T., Peltola, T., Seidel, S. C., Spencer, E., Tripathi, M., & Voelker, J. (2023). Modeling of surface damage at the Si/SiO2-interface of irradiated MOS-capacitors. Journal of Instrumentation, 18(08), P08001. https://doi.org/10.1088/1748-0221/18/08/p08001; https://doi.org/10.1088/1748-0221/18/08/p08001; https://hdl.handle.net/2346/96424

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Academic Journal
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Dissertation/ Thesis
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Dissertation/ Thesis
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Dissertation/ Thesis
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Dissertation/ Thesis

Authors: Doan, Tri C Cao

Contributors: Jiang, Hongxing, Lin, Jingyu, Li, Changzhi, Li, Jing

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