Authors: Wagner, J., Ramakrishnan, A., Behr, D., Maier, M., Herres, N., Kunzer, M., Obloh, H., Bachem, K.H.
Subject Terms: band gap energy, Bandlückenenergie, group III-nitrides, Gruppe III-Nitride, InGaN, photoreflection
Time: 621, 667
Relation: Materials Research Society (Fall Meeting) 1998; GaN and related alloys. Symposium at the MRS Fall Meeting; https://publica.fraunhofer.de/handle/publica/332564
Availability: https://publica.fraunhofer.de/handle/publica/332564