Authors: Moratis, K, Tan, S.L, Germanis, S, Katsidis, C, Androulidaki, M, Tsagaraki, K, Hatzopoulos, Z, Donatini, F, Cibert, J, Niquet, Y.-M, Mariette, H, Pelekanos, N.T

Contributors: DEPT OF ELECTRICAL & COMPUTER ENGG

Superior Title: Unpaywall 20201031

Subject Terms: Cathodoluminescence, Epitaxial growth, Gallium arsenide, Indium, Molecular beam epitaxy, Nanowires, Photoluminescence, Semiconducting gallium, Characterization techniques, Core-shell nanowires, GaAs, Micro photoluminescence, Micro-Raman, Photovoltaic applications, Si(111) substrate, Two-dimensional growth, Shells (structures)

Relation: Moratis, K, Tan, S.L, Germanis, S, Katsidis, C, Androulidaki, M, Tsagaraki, K, Hatzopoulos, Z, Donatini, F, Cibert, J, Niquet, Y.-M, Mariette, H, Pelekanos, N.T (2016). Strained GaAs/InGaAs Core-Shell Nanowires for Photovoltaic Applications. Nanoscale Research Letters 11 (1) : 176. ScholarBank@NUS Repository. https://doi.org/10.1186/s11671-016-1384-y; https://scholarbank.nus.edu.sg/handle/10635/179895

Availability: https://doi.org/10.1186/s11671-016-1384-y
https://scholarbank.nus.edu.sg/handle/10635/179895

Authors: Fu, Wei, Qiao, Jingsi, Zhao, Xiaoxu, Chen, Yu, Fu, Deyi, Yu, Wei, Leng, Kai, Song, Peng, Chen, Zhi, Yu, Ting, Pennycook, Stephen J, Quek, Su Ying, Loh, Kian Ping

Contributors: CENTRE FOR ADVANCED 2D MATERIALS, CHEMISTRY, MATERIALS SCIENCE AND ENGINEERING, PHYSICS

Superior Title: Elements

Subject Terms: Science & Technology, Physical Sciences, Technology, Chemistry, Multidisciplinary, Physical, Nanoscience & Nanotechnology, Materials Science, Science & Technology - Other Topics, charge density wave, two-dimensional transition metal dichalcogenides, molecular beam epitaxy, interfacial electrostatic interaction, Moire superlattice, TRANSITION-METAL, DYNAMICS, DICHALCOGENIDES, MONOLAYER, FLAKES, ORDER

Relation: Fu, Wei, Qiao, Jingsi, Zhao, Xiaoxu, Chen, Yu, Fu, Deyi, Yu, Wei, Leng, Kai, Song, Peng, Chen, Zhi, Yu, Ting, Pennycook, Stephen J, Quek, Su Ying, Loh, Kian Ping (2020-04-28). Room Temperature Commensurate Charge Density Wave on Epitaxially Grown Bilayer 2H-Tantalum Sulfide on Hexagonal Boron Nitride. ACS NANO 14 (4) : 3917-3926. ScholarBank@NUS Repository. https://doi.org/10.1021/acsnano.0c00303; https://scholarbank.nus.edu.sg/handle/10635/170891

Availability: https://doi.org/10.1021/acsnano.0c00303
https://scholarbank.nus.edu.sg/handle/10635/170891

Authors: Zhao, H.X, Yoon, S.F, Tong, C.Z, Liu, C.Y, Wang, R, Cao, Q

Contributors: DEPT OF ELECTRICAL & COMPUTER ENGG

Superior Title: Unpaywall 20201031

Subject Terms: Bandwidth, III-V semiconductors, Indium arsenide, Molecular beam epitaxy, Nanocrystals, Narrow band gap semiconductors, Quantum dot lasers, Quantum optics, Quantum well lasers, Ridge waveguides, Semiconductor lasers, Semiconductor quantum dots, Temperature, Modulation, Thermal effects, Continuous wave operation, Gain compression factor, High-speed performance, Ridge-waveguide devices, Self-assembled quantum-dot lasers, Small signal modulation, Small signal modulation bandwidth, Wide temperature ranges, Cavity length, Differential gain, InAs/GaAs, K-factor, Modulation bandwidth, Resonance frequencies, Self-assembled

Relation: Zhao, H.X, Yoon, S.F, Tong, C.Z, Liu, C.Y, Wang, R, Cao, Q (2011). Thermal Effects and Small Signal Modulation of 1.3-?m InAs/GaAs Self-Assembled Quantum-Dot Lasers. Nanoscale Research Letters 6 (1) : 1-5. ScholarBank@NUS Repository. https://doi.org/10.1007/s11671-010-9798-4; https://scholarbank.nus.edu.sg/handle/10635/178186

Availability: https://scholarbank.nus.edu.sg/handle/10635/178186

Authors: DUAN SISHENG

Contributors: PHYSICS, Wei Chen, Thye Shen, Andrew Wee

Subject Terms: scanning probe microscopy, two-dimensional materials, molecular beam epitaxy, kagome lattice, coloring-triangle lattice, charge density wave

Relation: DUAN SISHENG (2023-04-10). SCANNING PROBE MICROSCOPY INVESTIGATION OF TRANSITION-METAL-BASED TWO-DIMENSIONAL MATERIALS. ScholarBank@NUS Repository.; https://scholarbank.nus.edu.sg/handle/10635/243118; orcid:0009-0001-3297-5238

Availability: https://scholarbank.nus.edu.sg/handle/10635/243118

Authors: Wong, PKJ, Zhang, W, Bussolotti, F, Yin, X, Herng, TS, Zhang, L, Huang, YL, Vinai, G, Krishnamurthi, S, Bukhvalov, DW, Zheng, YJ, Chua, R, N'Diaye, AT, Morton, SA, Yang, CY, Ou Yang, KH, Torelli, P, Chen, W, Goh, KEJ, Ding, J, Lin, MT, Brocks, G, de Jong, MP, Castro Neto, AH, Wee, ATS

Contributors: CENTRE FOR ADVANCED 2D MATERIALS, DEPT OF PHYSICS, DEPT OF CHEMISTRY, MATERIALS SCIENCE AND ENGINEERING

Superior Title: Elements

Subject Terms: 2D materials, monolayer magnet, spin frustration, van der Waals epitaxy, vanadium diselenide

Relation: Wong, PKJ, Zhang, W, Bussolotti, F, Yin, X, Herng, TS, Zhang, L, Huang, YL, Vinai, G, Krishnamurthi, S:, Bukhvalov, DW, Zheng, YJ, Chua, R, N'Diaye, AT, Morton, SA, Yang, CY, Ou Yang, KH, Torelli, P, Chen, W, Goh, KEJ, Ding, J, Lin, MT, Brocks, G, de Jong, MP, Castro Neto, AH, Wee, ATS (2019-01-01). Evidence of Spin Frustration in a Vanadium Diselenide Monolayer Magnet. Advanced Materials : e1901185-. ScholarBank@NUS Repository. https://doi.org/10.1002/adma.201901185; https://scholarbank.nus.edu.sg/handle/10635/155109

Availability: https://doi.org/10.1002/adma.201901185
https://scholarbank.nus.edu.sg/handle/10635/155109

Authors: Wong, Ping Kwan Johnny, Zhang, Wen, Zhou, Jun, Bussolotti, Fabio, Yin, Xinmao, Zhang, Lei, N'Diaye, Alpha T, Morton, Simon A, Chen, Wei, Goh, Johnson, de Jong, Michel P, Feng, Yuan Ping, Wee, Andrew TS

Contributors: PHYSICS

Superior Title: Elements

Subject Terms: Science & Technology, Physical Sciences, Technology, Chemistry, Multidisciplinary, Physical, Nanoscience & Nanotechnology, Materials Science, Science & Technology - Other Topics, two-dimensional materials, transition-metal dichalcogenides, vanadium ditelluride, molecular beam epitaxy, magnetism, INTERCALATION

Relation: Wong, Ping Kwan Johnny, Zhang, Wen, Zhou, Jun, Bussolotti, Fabio, Yin, Xinmao, Zhang, Lei, N'Diaye, Alpha T, Morton, Simon A, Chen, Wei, Goh, Johnson, de Jong, Michel P, Feng, Yuan Ping, Wee, Andrew TS (2019-11-01). Metallic 1T Phase, 3d(1) Electronic Configuration and Charge Density Wave Order in Molecular Beam Epitaxy Grown Monolayer Vanadium Ditelluride. ACS NANO 13 (11) : 12894-12900. ScholarBank@NUS Repository. https://doi.org/10.1021/acsnano.9b05349; https://scholarbank.nus.edu.sg/handle/10635/230040

Availability: https://doi.org/10.1021/acsnano.9b05349
https://scholarbank.nus.edu.sg/handle/10635/230040

Authors: Ren, Zekun, Thway, Maung, Liu, Zhe, Wang, Yue, Ke, Cangming, Yaung, Kevin N, Wang, Bing, Tan, Chuan Seng, Lin, Fen, Aberle, Armin G, Buonassisi, Tonio, Peters, Ian Marius

Contributors: SOLAR ENERGY RESEARCH INST OF S'PORE

Superior Title: Elements

Subject Terms: Science & Technology, Technology, Physical Sciences, Energy & Fuels, Materials Science, Multidisciplinary, Physics, Applied, One sun tandem solar cell, Ultra-thin GaAs, III-V on Si, III-V tandem, MOLECULAR-BEAM EPITAXY, SURFACE-MORPHOLOGY, DISLOCATIONS, EFFICIENCY, TANDEM, INDIUM, ZINC

Relation: Ren, Zekun, Thway, Maung, Liu, Zhe, Wang, Yue, Ke, Cangming, Yaung, Kevin N, Wang, Bing, Tan, Chuan Seng, Lin, Fen, Aberle, Armin G, Buonassisi, Tonio, Peters, Ian Marius (2018-11-01). Ultra-Thin GaAs Double-Junction Solar Cell With Carbon-Doped Emitter. IEEE JOURNAL OF PHOTOVOLTAICS 8 (6) : 1627-1634. ScholarBank@NUS Repository. https://doi.org/10.1109/JPHOTOV.2018.2870721; https://scholarbank.nus.edu.sg/handle/10635/176902

Availability: https://doi.org/10.1109/JPHOTOV.2018.2870721
https://scholarbank.nus.edu.sg/handle/10635/176902

Authors: Kohen, D, Nguyen, X.S, Yadav, S, Kumar, A, Made, R.I, Heidelberger, C, Gong, X, Lee, K.H, Lee, K.E.K, Yeo, Y.C, Yoon, S.F, Fitzgerald, E.A

Contributors: DEPT OF ELECTRICAL & COMPUTER ENGG

Superior Title: Unpaywall 20200831

Subject Terms: Electron mobility, Epitaxial growth, Field effect transistors, Germanium, Metallorganic vapor phase epitaxy, Organometallics, Phase separation, Silicon wafers, Surface roughness, Channel length, Compositionally graded buffers, Graded buffer, High electron mobility transistor (HEMT), Metal-organic vapor phase epitaxy, Silicon substrates, Strain relaxing, Threading dislocation densities, High electron mobility transistors

Relation: Kohen, D, Nguyen, X.S, Yadav, S, Kumar, A, Made, R.I, Heidelberger, C, Gong, X, Lee, K.H, Lee, K.E.K, Yeo, Y.C, Yoon, S.F, Fitzgerald, E.A (2016). Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer. AIP Advances 6 (8) : 85106. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4961025; https://scholarbank.nus.edu.sg/handle/10635/176123

Availability: https://doi.org/10.1063/1.4961025
https://scholarbank.nus.edu.sg/handle/10635/176123

Authors: Zheng, Yu Jie, Huang, Yu Li, Chen, Yifeng, Zhao, Weijie, Eda, Goki, Spataru, Catalin D, Zhang, Wenjing, Chang, Yung-Huang, Li, Lain-Jong, Chi, Dongzhi, Quek, Su Ying, Wee, Andrew Thye Shen

Contributors: CENTRE FOR ADVANCED 2D MATERIALS, MATERIALS SCIENCE AND ENGINEERING, PHYSICS

Superior Title: Elements

Subject Terms: Science & Technology, Physical Sciences, Technology, Chemistry, Multidisciplinary, Physical, Nanoscience & Nanotechnology, Materials Science, Science & Technology - Other Topics, Two-dimensional transition metal dichalcogenides, Organic-inorganic interface, Screening effects, Energy level alignment, Scanning tunneling microscopy/spectroscopy, First principle calculations, TOTAL-ENERGY CALCULATIONS, QUASI-PARTICLE ENERGIES, MOLECULE, PTCDA, MOS2, 1ST-PRINCIPLES, SEMICONDUCTORS, ABSORPTION, ALIGNMENT, EPITAXY

Relation: Zheng, Yu Jie, Huang, Yu Li, Chen, Yifeng, Zhao, Weijie, Eda, Goki, Spataru, Catalin D, Zhang, Wenjing, Chang, Yung-Huang, Li, Lain-Jong, Chi, Dongzhi, Quek, Su Ying, Wee, Andrew Thye Shen (2016-02-01). Heterointerface Screening Effects between Organic Monolayers and Monolayer Transition Metal Dichalcogenides. ACS NANO 10 (2) : 2476-2484. ScholarBank@NUS Repository. https://doi.org/10.1021/acsnano.5b07314; https://scholarbank.nus.edu.sg/handle/10635/170914

Availability: https://doi.org/10.1021/acsnano.5b07314
https://scholarbank.nus.edu.sg/handle/10635/170914

Authors: Ju J., Sun B., Haunschild G., Loitsch B., Stoib B., Brandt M.S., Stutzmann M., Koh Y.K., Koblmüller G.

Contributors: CHEMICAL & BIOMOLECULAR ENGINEERING, MECHANICAL ENGINEERING

Superior Title: Unpaywall 20200831

Subject Terms: Energy gap, Gallium alloys, III-V semiconductors, Molecular beam epitaxy, Nitrides, Semiconductor alloys, Temperature measurement, Thermal conductivity, Thermoelectric equipment, Thermoelectricity, Confinement effects, Electrical conductivity, Group III nitrides, N-type InGaN, Power factors, Short periods, Ternary nitrides, Thermoelectric properties, Indium alloys

Relation: Ju J., Sun B., Haunschild G., Loitsch B., Stoib B., Brandt M.S., Stutzmann M., Koh Y.K., Koblmüller G. (2016). Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices. AIP Advances 6 (4) : 45216. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4948446; https://scholarbank.nus.edu.sg/handle/10635/174628

Availability: https://doi.org/10.1063/1.4948446
https://scholarbank.nus.edu.sg/handle/10635/174628

Authors: Lim, S.T., Sim, C.H., Chen, W.Q., Bi, J.F., Teo, K.L., Liew, T., Chong, T.C.

Contributors: DATA STORAGE INSTITUTE, ELECTRICAL & COMPUTER ENGINEERING

Superior Title: Scopus

Subject Terms: Ge1-xMnxTe, Magnetoresistance, Molecular-beam epitaxy

Relation: Lim, S.T., Sim, C.H., Chen, W.Q., Bi, J.F., Teo, K.L., Liew, T., Chong, T.C. (2009-07-10). Temperature dependent magneto-transport studies in ferromagnetic GE 1-XMNXTE with high mn composition. International Journal of Modern Physics B 23 (17) : 3591-3595. ScholarBank@NUS Repository. https://doi.org/10.1142/S021797920906302X; http://scholarbank.nus.edu.sg/handle/10635/84276; 000268109400025

Availability: https://doi.org/10.1142/S021797920906302X
http://scholarbank.nus.edu.sg/handle/10635/84276

Authors: Wang, L.S., Chua, S.J., Tripathy, S., Zang, K.Y., Wang, B.Z., Teng, J.H.

Contributors: ELECTRICAL & COMPUTER ENGINEERING

Superior Title: Scopus

Subject Terms: GaN on Si substrate, Micro-structural characterization, Nanopatterning, Optical spectroscopy, Selective area epitaxy

Relation: Wang, L.S., Chua, S.J., Tripathy, S., Zang, K.Y., Wang, B.Z., Teng, J.H. (2008). Nanopatterning and selective area epitaxy of GaN on Si substrate. Proceedings of SPIE - The International Society for Optical Engineering 6894 : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.762149; http://scholarbank.nus.edu.sg/handle/10635/71088; 000254733800005

Availability: https://doi.org/10.1117/12.762149
http://scholarbank.nus.edu.sg/handle/10635/71088

Authors: CHEN JUNSHU

Contributors: PHYSICS, Xuesen Wang, Wang Gan

Subject Terms: Molecular beam epitaxy, 2D bismuth, Cr2Te3, intercalation, reduction reaction, annealing effect

Relation: CHEN JUNSHU (2021-08-09). MOLECULAR BEAM EPITAXY OF TWO-DIMENSIONAL BISMUTH INTERCALATED SYSTEMS. ScholarBank@NUS Repository.; https://scholarbank.nus.edu.sg/handle/10635/212694; orcid:0000-0003-3093-0367

Availability: https://scholarbank.nus.edu.sg/handle/10635/212694

Authors: CHUA EN HUI REBEKAH

Contributors: INTEGRATIVE SCIENCES & ENGINEERING PROG, Thye Shen, Andrew Wee, Kian Ping Loh

Subject Terms: two-dimensional magnets, scanning probe microscopy, molecular beam epitaxy, monolayer vanadium diselenide, monolayer chromium telluride

Relation: CHUA EN HUI REBEKAH (2021-01-21). ELECTRONIC AND MAGNETIC PROPERTIES OF 2D MAGNETIC MATERIALS. ScholarBank@NUS Repository.; https://scholarbank.nus.edu.sg/handle/10635/192615; orcid:0000-0003-2054-2723

Availability: https://scholarbank.nus.edu.sg/handle/10635/192615

Authors: Teng, J.H., Dong, J.R., Chong, L.F., Chua, S.J., Wang, Y.J., Chen, A.

Contributors: ELECTRICAL & COMPUTER ENGINEERING, SINGAPORE SYNCHROTRON LIGHT SOURCE

Superior Title: Scopus

Subject Terms: A1. Nanostructures, A3. Metalorganic vapor phase epitaxy, A3. Selective epitaxy, B2. Semiconducting III-V materials, B2. Semiconducting indium phosphide

Relation: Teng, J.H., Dong, J.R., Chong, L.F., Chua, S.J., Wang, Y.J., Chen, A. (2007-07-01). One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application. Journal of Crystal Growth 305 (1) : 45-49. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2007.04.024; http://scholarbank.nus.edu.sg/handle/10635/82823; 000247841300010

Availability: https://doi.org/10.1016/j.jcrysgro.2007.04.024
http://scholarbank.nus.edu.sg/handle/10635/82823

Authors: Chia, C.K., Dong, J.R., Chua, S.J., Tripathy, S.

Contributors: ELECTRICAL & COMPUTER ENGINEERING

Superior Title: Scopus

Subject Terms: A1. Low-dimensional structures, A3. Metalorganic chemical vapor deposition, A3. Molecular beam epitaxy, B2. Semiconducting III-V materials

Relation: Chia, C.K., Dong, J.R., Chua, S.J., Tripathy, S. (2006-02-02). Bandgap engineering in semiconductor quantum dots. Journal of Crystal Growth 288 (1) : 57-60. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2005.12.050; http://scholarbank.nus.edu.sg/handle/10635/69491; 000235581800014

Availability: https://doi.org/10.1016/j.jcrysgro.2005.12.050
http://scholarbank.nus.edu.sg/handle/10635/69491

Authors: Gao, F., Lee, S.J., Balakumar, S., Du, A., Foo, Y.-L., Kwong, D.-L.

Contributors: ELECTRICAL & COMPUTER ENGINEERING

Superior Title: Scopus

Subject Terms: GOI, MOSFET, SiGe, Solid phase epitaxy

Relation: Gao, F., Lee, S.J., Balakumar, S., Du, A., Foo, Y.-L., Kwong, D.-L. (2006-05-10). Ge diffusion and solid phase epitaxy growth to form Si 1 - XGex/Si and Ge on insulator structure. Thin Solid Films 504 (1-2) : 69-72. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.043; http://scholarbank.nus.edu.sg/handle/10635/83757; 000236486200017

Availability: https://doi.org/10.1016/j.tsf.2005.09.043
http://scholarbank.nus.edu.sg/handle/10635/83757

Authors: Zhao, J., Chen, J., Feng, Z.C., Chen, J.L., Liu, R., Xu, G.

Contributors: INSTITUTE OF ENGINEERING SCIENCE

Superior Title: Scopus

Subject Terms: Dielectric cap, Impurity-free vacancy-enhanced intermixing, InGaP, InP, Molecular beam epitaxy, Optical properties, Quantum well, Rapid thermal annealing, SIMS

Relation: Zhao, J., Chen, J., Feng, Z.C., Chen, J.L., Liu, R., Xu, G. (2006-03-01). Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing. Thin Solid Films 498 (1-2) : 179-182. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.07.076; http://scholarbank.nus.edu.sg/handle/10635/115388; 000235270500035

Availability: https://doi.org/10.1016/j.tsf.2005.07.076
http://scholarbank.nus.edu.sg/handle/10635/115388

Authors: Zheng, Y.B., Chua, S.J., Huan, C.H.A., Miao, Z.L.

Contributors: ELECTRICAL & COMPUTER ENGINEERING, PHYSICS

Superior Title: Scopus

Subject Terms: A1. Atomic force microscopy, A3. Molecular beam epitaxy, B1. Quantum dots, B2. Semiconducting III-V materials

Relation: Zheng, Y.B., Chua, S.J., Huan, C.H.A., Miao, Z.L. (2004-08-01). Selective growth of GaAs quantum dots on the triangle nanocavities bounded by SiO2 mask on Si substrate by MBE. Journal of Crystal Growth 268 (3-4 SPEC. ISS.) : 369-374. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2004.04.056; http://scholarbank.nus.edu.sg/handle/10635/84163; 000223087000007

Availability: https://doi.org/10.1016/j.jcrysgro.2004.04.056
http://scholarbank.nus.edu.sg/handle/10635/84163

Authors: Teo, K.L., Chen, C., Chong, T.C.

Contributors: ELECTRICAL & COMPUTER ENGINEERING

Superior Title: Scopus

Subject Terms: A1. Reflection high energy electron diffraction, A3. Molecular beam epitaxy, B1. Sulfides, B2. Semiconducting II-VI materials

Relation: Teo, K.L., Chen, C., Chong, T.C. (2004-08-01). Nanoscale cube-on-cube growth and characterization of SrS:Eu, Sm optical memory material. Journal of Crystal Growth 268 (3-4 SPEC. ISS.) : 602-606. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2004.04.099; http://scholarbank.nus.edu.sg/handle/10635/83999; 000223087000050

Availability: https://doi.org/10.1016/j.jcrysgro.2004.04.099
http://scholarbank.nus.edu.sg/handle/10635/83999