Authors: Γάτσιος, Χρήστος, Gatsios, Christos
Subject Terms: Διδιάστατα υλικά, Διχαλκογενίδια μεταπτωτικών μετάλλων, Επιταξία με μοριακές δέσμες, Δομικός χαρακτηρισμός διδιάστατων υλικών, Transition metal dichalcogenides, Τοπολογικά υλικά, Topological materials, Molecular beam epitaxy, Structural characterization, Two dimensional materials
File Description: application/pdf
Relation: http://dspace.lib.ntua.gr/xmlui/handle/123456789/48775; http://dx.doi.org/10.26240/heal.ntua.16590
Authors: Sapountzakis, EJ, Dourakopoulos, JA
Subject Terms: Bar, Boundary element method, Composite beam, Flexural, Flexural-torsional buckling, Nonuniform torsion, Shear deformation, Timoshenko beam, Twist, Warping, Mechanics, Boundary conditions, Boundary integral equations, Boundary value problems, Buckling, Composite beams and girders, Deformation, Difference equations, Differential equations, Differentiation (calculus), Initial value problems, Integral equations, Molecular beam epitaxy, Numerical analysis, Ordinary differential equations, Poisson ratio, Weaving, Analog equation method, Applied loads, Basic equations
Relation: ISI:000259419100002; 35; 497; 516
Availability: https://doi.org/10.1016/j.mechrescom.2008.06.007
Authors: Mitsoulis, E
Subject Terms: Bingham plastics, Calendering, Papanastasiou model, Sheet thickness, Viscoplasticity, Yield stress, Yielded/unyielded regions, Mechanics, Calenders, Computer simulation, Crystallography, Materials science, Molecular beam epitaxy, Plasticity, Technology, Two dimensional, Viscosity, Vortex flow, A posteriori, Bingham numbers, Deformation rates, Dimensionless form, Finite element method FEM, Finite thickness, Free surfaces, Herschel-Bulkley, Lubrication approximations, Newtonian, Newtonian viscous fluids, Numerica l results
Relation: ISI:000259658700001; 154; 2-3; 77; 88
Availability: https://doi.org/10.1016/j.jnnfm.2008.03.001
Authors: Arpatzanis, N, Tsormpatzoglou, A, Dimitriadis, CA, Song, JD, Choi, WJ, Lee, JI, Charitidis, C
Subject Terms: Physics, Applied, Defects, Dissolution, Heat treatment, Impurities, Molecular beam epitaxy, Phase noise, Rapid thermal annealing, Schottky barrier diodes, Self assembly, Electron concentration, Noise properties, Semiconductor quantum dots
Relation: ISI:000249474100070; 102
Availability: https://doi.org/10.1063/1.2775536
Authors: Tsoukalas, D, Dimitrakis, P, Kolliopoulou, S, Normand, P
Subject Terms: CMOS, Nanoparticle, Non-volatile memory, Self-assembly, Materials Science, Multidisciplinary, Physics, Condensed Matter, Chemical vapor deposition, CMOS integrated circuits, Data storage equipment, Electric potential, Energy absorption, Ion implantation, Molecular beam epitaxy, Semiconductor devices, Sputtering, Metallic nanoparticles, Nanostructured materials
Relation: ISI:000233895800014; 124-125; SUPPL.; 93; 101
Availability: https://doi.org/10.1016/j.mseb.2005.08.105
Authors: Bouroushian, M, Kosanovic, T, Spyrellis, N
Subject Terms: A1. X-ray diffraction, A2. II-VI Epitaxial growth, A3. polycrystalline electrodeposition, B1. ZnSe/CdSe heterostructures, B2. semiconducting II-VI materials, Crystallography, Cadmium compounds, Crystal orientation, Electrodeposition, Epitaxial growth, Heterojunctions, Lattice constants, Light emitting diodes, Molecular beam epitaxy, Polycrystalline materials, Scanning electron microscopy, X ray diffraction, II-VI Epitaxial growth, Polycrystalline electrodeposition, Semiconducting II-VI materials, ZnSe/CdSe heterostructures, Zinc compounds
Relation: ISI:000228737900053; 277; 1-4; 335; 344
Availability: https://doi.org/10.1016/j.jcrysgro.2005.01.053
Authors: Sargentis, Ch, Giannakopoulos, K, Travlos, A, Tsamakis, D
Subject Terms: Molecular Beam Epitaxy
Relation: 10; 53; 56
Availability: https://doi.org/10.1088/1742-6596/10/1/014
Authors: Tsamakis, D, Vlachos, M, Travlos, A, Salamouras, N
Subject Terms: Hall effect, Mobility, Molecular beam epitaxy, Rare earth silicides, Carrier concentration, Carrier mobility, Crystal structure, Dysprosium compounds, Electric conductivity, Erbium compounds, Semiconducting silicon, Substrates, Transmission electron microscopy, Transport properties, X ray diffraction analysis, Crystalline materials
Relation: 418; 211; 214
Availability: https://doi.org/10.1016/S0040-6090(02)00621-1
Authors: Tsamakis, D, Sargentis, Ch, Apostolopoulos, G, Boukos, N
Subject Terms: Epitaxy, Hall mobility, MBE, Strained SiGe, Materials Science, Multidisciplinary, Physics, Condensed Matter, Electric conductivity, Hall effect, Molecular beam epitaxy, Semiconducting silicon compounds, Semiconductor doping, X ray diffraction analysis, Hall measurements, Heterojunctions
Relation: ISI:000174015300047; 89; 1-3; 221; 224
Availability: https://doi.org/10.1016/S0921-5107(01)00859-5
Authors: Kontos, AG, Chrysanthakopoulos, N, Calamiotou, M, Kehagias, T, Komninou, P, Pohl, UW
Subject Terms: Physics, Applied, MOLECULAR-BEAM EPITAXY, X-RAY-DIFFRACTION, PIEZOELECTRIC FIELDS, ZNSE(111) FILMS, HETEROSTRUCTURES, SUPERLATTICES, STRAINS
Relation: ISI:000171135900025; 90; 3301; 3307
Availability: https://doi.org/10.1063/1.1398593
Authors: Astropekakis, A, Power, JR, Fleischer, K, Esser, N, Galata, S, Papadimitriou, D, Richter, W
Subject Terms: Single Domain, Physics, Condensed Matter, REFLECTANCE DIFFERENCE SPECTROSCOPY, MOLECULAR-BEAM EPITAXY, VICINAL SI(001), SI(100) SURFACE, GROWTH, SI(111), SYSTEM, RECONSTRUCTION, ORIENTATION, MORPHOLOGY
Relation: ISI:000167203500060; 6308
Availability: https://doi.org/10.1103/PhysRevB.63.085317
Authors: Arpatzanis, N, Vlastou, R, Konstantinidis, G, Assmann, W, Papastamatiou, M, Gazis, E, Papaioannou, GJ
Subject Terms: Heavy Ions, Ion Beam, Ion Irradiation, Kinetics, Molecular Beam Epitaxy, First Order, Engineering, Electrical & Electronic, Physics, Applied, Condensed Matter, Alpha particles, Annealing, Charge transfer, Crystal defects, Electron energy levels, Epitaxial growth, Ion beams, Ion bombardment, Reaction kinetics, Arrhenius signature, Deep levels, Heavy ion irradiation, Pair recombination, Semiconducting gallium arsenide
Relation: ISI:000072877100016; 42; 277; 282
Availability: https://doi.org/10.1016/S0038-1101(97)00221-9
Authors: Calamiotou, M, Raptis, YS, Anastassakis, E, Lagadas, M, Hatzopoulos, Z
Subject Terms: Low Temperature Grown, Physics, Condensed Matter, Crystal lattices, Diffraction, Growth (materials), Molecular beam epitaxy, Phonons, Raman scattering, Raman spectroscopy, Substrates, Arsenic excess, Atomic layer epitaxy, Crystallinity, Epilayers, Misfit strains, Residual strains, Volume expansion, X ray diffraction, Semiconducting gallium arsenide
Relation: ISI:A1993LU13500015; 87; 563; 566
Availability: https://doi.org/10.1016/0038-1098(93)90597-G
Authors: Resch, U, Esser, N, Raptis, YS, Richter, W, Wasserfall, J, Forster, A, Westwood, DI
Subject Terms: Arsenic, Electronic Properties, Chemistry, Physical, Physics, Condensed Matter, Crystal structure, Desorption, Electron spectroscopy, Molecular beam epitaxy, Passivation, Surface properties, Decapped surfaces, Electron energy loss spectroscopy, Thermal desorption, Semiconducting gallium arsenide
Relation: ISI:A1992HY64300033; 269-270; C; 797; 803
Availability: https://doi.org/10.1016/0039-6028(92)91351-B
Authors: PAPANICOLAOU, N, ANDERSON, G, MODOLO, J, GEORGAKILAS, A
Subject Terms: Molecular Beam Epitaxy
Availability: https://doi.org/10.1016/0749-6036(90)90246-4
Subject Terms: Νιτρίδια, Νιτρίδιο του αλουμινίου, Νιτρίδιο του πυριτίου, Μνήμες μεταβλητής αντίστασης, Επιταξία με μοριακές δέσμες, Memristor, Aluminum nitride, Silicon nitride, Molecular beam epitaxy, Resistive RAM
File Description: application/pdf
Relation: https://dspace.lib.ntua.gr/xmlui/handle/123456789/53924; http://dx.doi.org/10.26240/heal.ntua.21622