Authors: Γάτσιος, Χρήστος, Gatsios, Christos
Subject Terms: Διδιάστατα υλικά, Διχαλκογενίδια μεταπτωτικών μετάλλων, Επιταξία με μοριακές δέσμες, Δομικός χαρακτηρισμός διδιάστατων υλικών, Transition metal dichalcogenides, Τοπολογικά υλικά, Topological materials, Molecular beam epitaxy, Structural characterization, Two dimensional materials
File Description: application/pdf
Relation: http://dspace.lib.ntua.gr/xmlui/handle/123456789/48775; http://dx.doi.org/10.26240/heal.ntua.16590
Authors: Strassburg, M, Schulz, O, Pohl, UW, Hoffmann, A, Bimberg, D, Kontos, AG, Raptis, YS
Subject Terms: A1. p-Type doping, A3. Metalorganic vapor phase epitaxy, B1. Phosphorus acceptor, B1. ZnSeTe, B2. Semiconducting II-VI materials, Crystallography, Composition, Doping (additives), Semiconducting indium phosphide, Semiconducting zinc compounds, Phosphorus acceptor, Metallorganic vapor phase epitaxy
Relation: ISI:000180446900010; 248; SUPPL.; 50; 55
Availability: https://doi.org/10.1016/S0022-0248(02)01893-6
Authors: Tsamakis, D, Sargentis, Ch, Apostolopoulos, G, Boukos, N
Subject Terms: Epitaxy, Hall mobility, MBE, Strained SiGe, Materials Science, Multidisciplinary, Physics, Condensed Matter, Electric conductivity, Hall effect, Molecular beam epitaxy, Semiconducting silicon compounds, Semiconductor doping, X ray diffraction analysis, Hall measurements, Heterojunctions
Relation: ISI:000174015300047; 89; 1-3; 221; 224
Availability: https://doi.org/10.1016/S0921-5107(01)00859-5
Authors: Sardari, SE, Iliadis, AA, Stamataki, M, Tsamakis, D, Konofaos, N
Subject Terms: Hetero-epitaxial growth, Laser epitaxy, Luminescence, Native defects, Semiconducting II-VI materials, Zinc compounds, A-thermal, Crystal qualities, Defect-related emission, Device application, Electrical conduction, Four-point, Growth conditions, Hall effect measurement, Heteroepitaxial growth, High quality, Interstitials, Low growth temperature, Low temperatures, Lower pressures, N-type conductivity, Native defect, Optical qualities, Optimized conditions, Optimum growth conditions, Oxygen pressure, Oxygen-vacancy complexes, P-type conductivity, Polycrystalline structure, Room temperature
Relation: 54; 10; 1150; 1154
Availability: https://doi.org/10.1016/j.sse.2010.05.025
Authors: Strotos, G, Gavaises, M, Theodorakakos, A, Bergeles, G
Subject Terms: Droplet deposition, Droplet impact, Heated wall, Vaporisation, VOF, Thermodynamics, Engineering, Mechanical, Mechanics, Air, Computational fluid dynamics, Computer simulation, Cooling, Drop formation, Drops, Dynamics, Evaporation, Fluid dynamics, Fluid mechanics, Fluids, Forecasting, Heat conduction, Liquid phase epitaxy, Liquids, Moisture, Vapors, Walls (structural partitions), Air flows, Atmospheric conditions, Cooling effectiveness
Relation: ISI:000259654600012; 51; 19-20; 4728; 4742
Availability: https://doi.org/10.1016/j.ijheatmasstransfer.2008.02.036
Authors: Sapountzakis, EJ, Dourakopoulos, JA
Subject Terms: Bar, Boundary element method, Composite beam, Flexural, Flexural-torsional buckling, Nonuniform torsion, Shear deformation, Timoshenko beam, Twist, Warping, Mechanics, Boundary conditions, Boundary integral equations, Boundary value problems, Buckling, Composite beams and girders, Deformation, Difference equations, Differential equations, Differentiation (calculus), Initial value problems, Integral equations, Molecular beam epitaxy, Numerical analysis, Ordinary differential equations, Poisson ratio, Weaving, Analog equation method, Applied loads, Basic equations
Relation: ISI:000259419100002; 35; 497; 516
Availability: https://doi.org/10.1016/j.mechrescom.2008.06.007
Authors: Mitsoulis, E
Subject Terms: Bingham plastics, Calendering, Papanastasiou model, Sheet thickness, Viscoplasticity, Yield stress, Yielded/unyielded regions, Mechanics, Calenders, Computer simulation, Crystallography, Materials science, Molecular beam epitaxy, Plasticity, Technology, Two dimensional, Viscosity, Vortex flow, A posteriori, Bingham numbers, Deformation rates, Dimensionless form, Finite element method FEM, Finite thickness, Free surfaces, Herschel-Bulkley, Lubrication approximations, Newtonian, Newtonian viscous fluids, Numerica l results
Relation: ISI:000259658700001; 154; 2-3; 77; 88
Availability: https://doi.org/10.1016/j.jnnfm.2008.03.001
Authors: Arpatzanis, N, Tsormpatzoglou, A, Dimitriadis, CA, Song, JD, Choi, WJ, Lee, JI, Charitidis, C
Subject Terms: Physics, Applied, Defects, Dissolution, Heat treatment, Impurities, Molecular beam epitaxy, Phase noise, Rapid thermal annealing, Schottky barrier diodes, Self assembly, Electron concentration, Noise properties, Semiconductor quantum dots
Relation: ISI:000249474100070; 102
Availability: https://doi.org/10.1063/1.2775536
Authors: Tsoukalas, D, Dimitrakis, P, Kolliopoulou, S, Normand, P
Subject Terms: CMOS, Nanoparticle, Non-volatile memory, Self-assembly, Materials Science, Multidisciplinary, Physics, Condensed Matter, Chemical vapor deposition, CMOS integrated circuits, Data storage equipment, Electric potential, Energy absorption, Ion implantation, Molecular beam epitaxy, Semiconductor devices, Sputtering, Metallic nanoparticles, Nanostructured materials
Relation: ISI:000233895800014; 124-125; SUPPL.; 93; 101
Availability: https://doi.org/10.1016/j.mseb.2005.08.105
Authors: Bouroushian, M, Kosanovic, T, Spyrellis, N
Subject Terms: A1. X-ray diffraction, A2. II-VI Epitaxial growth, A3. polycrystalline electrodeposition, B1. ZnSe/CdSe heterostructures, B2. semiconducting II-VI materials, Crystallography, Cadmium compounds, Crystal orientation, Electrodeposition, Epitaxial growth, Heterojunctions, Lattice constants, Light emitting diodes, Molecular beam epitaxy, Polycrystalline materials, Scanning electron microscopy, X ray diffraction, II-VI Epitaxial growth, Polycrystalline electrodeposition, Semiconducting II-VI materials, ZnSe/CdSe heterostructures, Zinc compounds
Relation: ISI:000228737900053; 277; 1-4; 335; 344
Availability: https://doi.org/10.1016/j.jcrysgro.2005.01.053
Authors: Sargentis, Ch, Giannakopoulos, K, Travlos, A, Tsamakis, D
Subject Terms: Molecular Beam Epitaxy
Relation: 10; 53; 56
Availability: https://doi.org/10.1088/1742-6596/10/1/014
Authors: Calamiotou, M, Raptis, YS, Anastassakis, E, Lagadas, M, Hatzopoulos, Z
Subject Terms: Low Temperature Grown, Physics, Condensed Matter, Crystal lattices, Diffraction, Growth (materials), Molecular beam epitaxy, Phonons, Raman scattering, Raman spectroscopy, Substrates, Arsenic excess, Atomic layer epitaxy, Crystallinity, Epilayers, Misfit strains, Residual strains, Volume expansion, X ray diffraction, Semiconducting gallium arsenide
Relation: ISI:A1993LU13500015; 87; 563; 566
Availability: https://doi.org/10.1016/0038-1098(93)90597-G
Authors: Kontos, AG, Raptis, YS, Strassburg, M, Pohl, UW, Bimberg, D
Subject Terms: Chemical vapor deposition (CVD), Heterostructures, Raman scattering, Selenides, Materials Science, Multidisciplinary, Coatings & Films, Physics, Applied, Condensed Matter, Band structure, Carrier concentration, Charge carriers, Chemical vapor deposition, Heterojunctions, Interfaces (materials), Metallorganic vapor phase epitaxy, Raman spectroscopy, Semiconducting gallium arsenide, Semiconductor doping, Stoichiometry, X ray diffraction, X ray spectroscopy, Epilayers, Semiconducting zinc compounds
Relation: ISI:000182500500038; 428; 1-2; 185; 189
Availability: https://doi.org/10.1016/S0040-6090(03)01195-1
Authors: Kontos, AG, Raptis, YS, Strassburg, M, Pohl, UW
Subject Terms: A1. Characterization, A1. Raman, A1. Stresses, A1. X-ray diffraction, A3. Metalorganic vapor phase epitaxy, B1. Tellurites, B2. Semiconductor ternary compounds, Crystallography, Crystal structure, Lattice constants, Raman scattering, Relaxation processes, Semiconducting indium phosphide, Semiconducting zinc compounds, Stoichiometry, Strain, Substrates, X ray diffraction analysis, Plastic strain, Epitaxial growth
Relation: ISI:000180078300003; 247; 1-2; 17; 22
Availability: https://doi.org/10.1016/S0022-0248(02)01904-8
Authors: Tsamakis, D, Vlachos, M, Travlos, A, Salamouras, N
Subject Terms: Hall effect, Mobility, Molecular beam epitaxy, Rare earth silicides, Carrier concentration, Carrier mobility, Crystal structure, Dysprosium compounds, Electric conductivity, Erbium compounds, Semiconducting silicon, Substrates, Transmission electron microscopy, Transport properties, X ray diffraction analysis, Crystalline materials
Relation: 418; 211; 214
Availability: https://doi.org/10.1016/S0040-6090(02)00621-1
Authors: Travlos, A, Apostolopoulos, G, Boukos, N, Katiniotis, Ch, Tsamakis, D
Subject Terms: Epitaxy, Erbium silicide, Silicon germanium, Materials Science, Multidisciplinary, Physics, Condensed Matter, Crystal lattices, Epitaxial growth, High temperature effects, Semiconducting silicon compounds, Substrates, Erbium silicides, Erbium compounds
Relation: ISI:000174015300081; 89; 1-3; 382; 385
Availability: https://doi.org/10.1016/S0921-5107(01)00835-2
Authors: Kontos, AG, Chrysanthakopoulos, N, Calamiotou, M, Kehagias, T, Komninou, P, Pohl, UW
Subject Terms: Physics, Applied, MOLECULAR-BEAM EPITAXY, X-RAY-DIFFRACTION, PIEZOELECTRIC FIELDS, ZNSE(111) FILMS, HETEROSTRUCTURES, SUPERLATTICES, STRAINS
Relation: ISI:000171135900025; 90; 3301; 3307
Availability: https://doi.org/10.1063/1.1398593
Authors: Astropekakis, A, Power, JR, Fleischer, K, Esser, N, Galata, S, Papadimitriou, D, Richter, W
Subject Terms: Single Domain, Physics, Condensed Matter, REFLECTANCE DIFFERENCE SPECTROSCOPY, MOLECULAR-BEAM EPITAXY, VICINAL SI(001), SI(100) SURFACE, GROWTH, SI(111), SYSTEM, RECONSTRUCTION, ORIENTATION, MORPHOLOGY
Relation: ISI:000167203500060; 6308
Availability: https://doi.org/10.1103/PhysRevB.63.085317
Authors: Arpatzanis, N, Vlastou, R, Konstantinidis, G, Assmann, W, Papastamatiou, M, Gazis, E, Papaioannou, GJ
Subject Terms: Heavy Ions, Ion Beam, Ion Irradiation, Kinetics, Molecular Beam Epitaxy, First Order, Engineering, Electrical & Electronic, Physics, Applied, Condensed Matter, Alpha particles, Annealing, Charge transfer, Crystal defects, Electron energy levels, Epitaxial growth, Ion beams, Ion bombardment, Reaction kinetics, Arrhenius signature, Deep levels, Heavy ion irradiation, Pair recombination, Semiconducting gallium arsenide
Relation: ISI:000072877100016; 42; 277; 282
Availability: https://doi.org/10.1016/S0038-1101(97)00221-9
Authors: Ganetsos, Th, Tsamakis, D, Panknin, D, Mair, GLR, Teichert, J, Bischoff, L, Aidinis, C
Subject Terms: Focused Ion Beam, Physics, Multidisciplinary, SILICON, EPITAXY, GROWTH
Relation: ISI:000074756500026; Pr3; 109-Pr3-112
Availability: https://doi.org/10.1051/jp4:1998325