Authors: Zhao, Songrui, Mi, Zetian
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Relation: Crystals, Volume: 7, Issue: 9, Publication date: 2017-09-01
Availability:
https://doi.org/10.3390/cryst7090268
https://nrc-publications.canada.ca/eng/view/ft/?id=8ef9befe-7470-4cc6-bbec-e3fb257831d5
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Authors: Tsybeskov, L., Mala, S. A., Wang, X., Baribeau, J.-M., Wu, X., Lockwood, D. J.
Subject Terms: Nanostructures, Molecular Beam Epitaxy, Inelastic Light Scattering, Raman Scattering
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Relation: Solid State Communications, Volume: 245, Publication date: 2016-07-09, Pages: 25–30
Availability:
https://doi.org/10.1016/j.ssc.2016.07.008
https://nrc-publications.canada.ca/eng/view/accepted/?id=e7469215-77b6-45da-b380-175305bd4da2
https://nrc-publications.canada.ca/eng/view/object/?id=e7469215-77b6-45da-b380-175305bd4da2
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Authors: Skierbiszewski, C., Siekacz, M., Turski, H., Muzioł, G., Sawicka, M., Feduniewicz-Zmuda, A., Cywiński, G., Cheze, C., Grzanka, S., Perlin, P., Wiśniewski, P., Wasilewski, Z.R., Porowski, S.
Subject Terms: Continuous wave lasing, Differential gain, GaN substrate, Laser structures, Optical modes, Optical output power, Plasma-assisted molecular beam epitaxy, Room temperature, Threading dislocation densities, Threshold currents, Gallium nitride, Molecular beam epitaxy, Epitaxial growth
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Relation: Applied Physics Express, Volume: 5, Issue: 2, Publication date: 2012
Authors: Turski, H., Siekacz, M., Sawicka, M., Cywinski, G., Krysko, M., Grzanka, S., Smalc-Koziorowska, J., Grzegory, I., Porowski, S., Wasilewski, Z.R., Skierbiszewski, C.
Subject Terms: Gallium flux, Growth mechanisms, Miscut angle, Nitrogen fluxes, Phenomenological models, Plasma assisted molecular beam epitaxy, Epitaxial growth, Gallium, Gallium alloys, Gallium compounds, Indium, Molecular beam epitaxy, Molecular beams
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Relation: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Volume: 29, Issue: 3, Publication date: 2011
Authors: Siekacz, M., Sawicka, M., Turski, H., Cywiski, G., Khachapuridze, A., Perlin, P., Suski, T., Bokowski, M., Smalc-Koziorowska, J., Kryko, M., Kudrawiec, R., Syperek, M., Misiewicz, J., Wasilewski, Z., Porowski, S., Skierbiszewski, C.
Subject Terms: Dissociation rates, GaN substrate, Green laser, Higher temperatures, Indium content, InGaN quantum wells, Laser structures, Lasing conditions, Lasing wavelength, Nitrogen fluxes, Optical qualities, Optically pumped, Piezo-electric fields, Plasma assisted molecular beam epitaxy, Dissociation, Electric fields, Epitaxial growth, Gallium nitride, Growth temperature, Indium, Molecular beam epitaxy, Pumping (laser), Quantum well lasers, Semiconductor quantum wells, Optically pumped lasers
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Relation: Journal of Applied Physics, Volume: 110, Issue: 6, Publication date: 2011
Authors: Benkouider, A., Ronda, A., Gouyé, A., Herrier, C., Favre, L., Lockwood, D. J., Rowell, N. L., Delobbe, A., Sudraud, P., Berbezier, I.
Subject Terms: nanowires (NWs), ordering, molecular beam epitaxy (MBE), selective growth, focused ion beam (FIB) patterning, photoluminescence
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Relation: Nanotechnology, Volume: 25, Issue: 33, Publication date: 2014
Authors: Briggs, R.M., Frez, C., Bagheri, M., Borgentun, C.E., Gupta, J.A., Witinski, M.F., Anderson, J.G., Forouhar, S.
Subject Terms: Absorption lines, Current thresholds, Distributed-feedback, Gas detection, InGaAsSb, Isotopologues, Modal characteristics, Multi-quantum well structures, Output power, Second orders, Single longitudinal mode, Single mode, Single mode emission, Molecular beam epitaxy, Ridge waveguides, Semiconductor lasers, Distributed feedback lasers
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Relation: Optics Express, Volume: 21, Issue: 1, Publication date: 2013, Pages: 1317–1323
Authors: Akbari-Sharbaf, A., Baribeau, J.-M., Wu, X., Lockwood, D.J., Fanchini, G.
Subject Terms: Molecular beam epitaxy, Disordered silicon, Defects, Electron spin resonance, Microstructure
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Relation: Thin Solid Films, Volume: 527, Publication date: 2013, Pages: 38–44
Authors: Lockwood, David J., Rowell, Nelson L., Barbagiovanni, Eric G., Goncharova, Lyudmila V., Simpson, Peter J., Berbezier, Isabelle, Amiard, Guillaume, Favre, Luc, Ronda, Antoine, Faustini, Marco, Grosso, David
Subject Terms: Absolute intensity, Efficiency curves, Energy dependence, Near-infrared bands, Photoluminescence efficiency, Self-assembled Ge quantum dots, Thermal-annealing, Transmission electron, Atomic force microscopy, Germanium, Graphene, Molecular beam epitaxy, Photoluminescence, Size distribution
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Relation: Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5, 223rd ECS Meeting, 5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications, May 12-17, 2013, Toronto, ON, Canada, ISBN: 9781607683742, Publication date: 2013, Pages: 185–206
Authors: Skierbiszewski, C., Siekacz, M., Turski, H., Muzioł, G., Sawicka, M., Feduniewicz-Zmuda, A., Smalc-Koziorowska, J., Perlin, P., Grzanka, S., Wasilewski, Z.R., Kucharski, R., Porowski, S.
Subject Terms: Blue laser diodes, GaN substrate, Growth technologies, High-nitrogen, InGaN laser diodes, InGaN quantum wells, Light loss, Plasma assisted molecular beam epitaxy, RF plasma, Single quantum well, Threading dislocation densities, Vacuum applications, Gallium nitride
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Relation: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Volume: 30, Issue: 2, Publication date: 2012
Subject Terms: gallium arsenide, indium arsenide, light-emitting diodes (LEDs), molecular beam epitaxy, quantum dots (QDs)
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Relation: IEEE Photonics Technology Letters, Volume: 24, Issue: 19, Publication date: 2012-08-16, Pages: 1677–1679
Authors: Gupta, J.A., Barrios, P.J., Bezinger, A., Waldron, P., Ventrudo, B.F., Lapointe, J., Poitras, D., Storey, C.
Subject Terms: Active regions, Distributed feedback grating, External cavity, Fabry Perot lasers, Gas detection, Gas sensing, InGaAsSb, Interband laser diodes, Laser absorption spectroscopy, Midinfrared lasers, Single mode, Single-mode lasers, Trace-gas sensing, Wavelength ranges, Absorption spectroscopy, Chemical detection, Distributed feedback lasers, Gallium alloys, Gas detectors, Infrared devices, Laser modes, Molecular beam epitaxy, Molecular beams, Optics, Photonics, Semiconducting gallium, Infrared lasers
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Relation: 2011 ICO International Conference on Information Photonics, IP 2011, 2011 ICO International Conference on Information Photonics, IP 2011, 18 May 2011 through 20 May 2011, Ottawa, ON, ISBN: 9781612843155, Publication date: 2011
Authors: Lockwood, D. J., Rowell, N. L., Berbezier, I., Amiard, G., Favre, L., Ronda, A., Faustini, M., Grosso, D.
Subject Terms: Dot diameter, Dot size, Energy dependence, Ge dots, In-situ, Near-infrared bands, Peak energy, PL bands, PL efficiency, PL spectra, Porous TiO, Self-assembled, Self-assembled Ge quantum dots, Si(0 0 1), Thermal-annealing, Tight binding, Transmission electron, Atomic force microscopy, Germanium, Molecular beam epitaxy, Optical properties, Silicon compounds, Size distribution, Titanium dioxide, Amorphous materials
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Relation: ECS Transactions, International Symposium on Pits and Pores IV: New Materials and Applications - 218th ECS Meeting, 10 October 2010 through 15 October 2010, Las Vegas, NV, ISBN: 9781607682226, Volume: 33, Issue: 16, Publication date: 2011, Pages: 147–165
Authors: Rowell, Nelson L., Lockwood, David J., Amiard, Guillaume, Favre, Luc, Ronda, Antoine, Berbezier, Isabelle, Faustini, Marco, Grosso, David
Subject Terms: Dot diameter, Dot size, Emission efficiencies, Energy dependent, Ge dots, Mesoporous TiO, Mesoporous titanium dioxide, Nanodots, Near-infrared bands, Peak energy, Photoluminescence efficiency, PL bands, PL spectra, Porous TiO, Self-assembled, Si(0 0 1), Theoretical models, Tight binding, Atomic force microscopy, Germanium, Molecular beam epitaxy, Photoluminescence, Self assembly, Titanium dioxide, Size distribution
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Relation: Journal of Nanoscience and Nanotechnology, Volume: 11, Issue: 10, Publication date: 2011, Pages: 9190–9195
Subject Terms: Defects, Etching, Molecular beam epitaxy, Quantum wells, Semiconducting III–V materials, Heterojunction semiconductor devices
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Relation: Journal of Crystal Growth, Volume: 312, Issue: 7, Publication date: 2010-03-15, Pages: 926–932
Availability:
https://doi.org/10.1016/j.jcrysgro.2010.01.007
https://nrc-publications.canada.ca/eng/view/accepted/?id=14d29e5e-84e6-44cd-9b14-13c5549c24cc
https://nrc-publications.canada.ca/eng/view/object/?id=14d29e5e-84e6-44cd-9b14-13c5549c24cc
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Authors: Tang, H., Baribeau, J. -M., Aers, G. C., Fraser, J., Rolfe, S., Bardwell, J. A.
Subject Terms: molecular beam epitaxy, gallium nitride, strain relaxation, buried cracks
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Relation: Journal of Crystal Growth, Proceedings of the 16th International Conference on Molecular Beam Epitaxy (ICMBE), August 22–27, 2010, Berlin, Germany, Volume: 323, Issue: 1, Publication date: 2010-11-18, Pages: 413–417
Availability:
https://doi.org/10.1016/j.jcrysgro.2010.11.063
https://nrc-publications.canada.ca/eng/view/accepted/?id=93018b5f-b20c-4bd9-9e03-e08c1524c7b2
https://nrc-publications.canada.ca/eng/view/object/?id=93018b5f-b20c-4bd9-9e03-e08c1524c7b2
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Authors: Skierbiszewski, C., Wasilewski, Z.R., Grzegory, I., Porowski, S.
Subject Terms: A3. Molecular beam epitaxy, B1. Nitrides, B3. Laser diodes
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Relation: Journal of Crystal Growth, Volume: 311, Issue: 7, Publication date: 2009-03-15, Pages: 1632–1639
Availability:
https://doi.org/10.1016/j.jcrysgro.2008.12.040
https://nrc-publications.canada.ca/eng/view/accepted/?id=68bc6749-e376-499f-aa04-677bacceb0ca
https://nrc-publications.canada.ca/eng/view/object/?id=68bc6749-e376-499f-aa04-677bacceb0ca
https://nrc-publications.canada.ca/fra/voir/objet/?id=68bc6749-e376-499f-aa04-677bacceb0ca
Authors: Tang, H., Rolfe, S., Semond, F., Bardwell, J. A., Baribeau, J. M.
Subject Terms: A3. Molecular beam epitaxy, B1. Nitrides, B3. High-electron mobility transistors
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Relation: Journal of Crystal Growth, Volume: 311, Issue: 7, Publication date: 2008-11-01, Pages: 2091–2095
Authors: Haffouz, S., Raymond, S., Lu, Z. G., Barrios, P. J., Roy-Guay, D., Wu, X., Liu, J. R., Poitras, D., Wasilewski, Z. R.
Subject Terms: low-dimensionalstructures, nanomaterials, molecular beam epitaxy, semiconducting gallium arsenide
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Relation: Journal of Crystal Growth, Volume: 311, Issue: 7, Publication date: 2008-11-11, Pages: 1803–1806
Authors: Chang, H-Y, Lee, E-K, Kamenev, B., Baribeau, J-M, Lockwood, David, Tsybeskov, L.
Subject Terms: luminescence, dopant, molecular beam epitaxy (MBE)
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Relation: MRS Online Proceedings Library, Volume: 958, Publication date: 2006-01