Authors: Laferriére, Patrick, Haffouz, Sofiane, Northeast, David B., Poole, Philip J., Williams, Robin L., Dalacu, Dan
Subject Terms: nanowire quantum dot, photonic waveguide, selective-area vapor−liquid−solid epitaxy, telecom single photon source
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Relation: Nano Letters, Volume: 23, Issue: 3, Publication date: 2023-02-08, Pages: 962–968
Availability:
https://doi.org/10.1021/acs.nanolett.2c04375
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Authors: Tang, H., Sadaf, S. M., Wu, X., Jiang, W.
Subject Terms: semiconductors, nitrides, doping, optoelectronic devices, epitaxy
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Relation: AIP Advances, Volume: 9, Issue: 5, Publication date: 2019-05-10, Pages: 1–8
Availability:
https://doi.org/10.1063/1.5089658
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Authors: Nakagawa, T., Lamoureux, S., Fujita, T., Ritzmann, J., Ludwig, A., Wieck, A. D., Oiwa, A., Korkusinski, M., Sachrajda, A., Austing, D. G., Gaudreau, L.
Subject Terms: quantum wells, doping, electronic transport, electrical properties and parameters, spin-orbit interactions, hall effect, epitaxy, quantum dots, g-factor
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Relation: Journal of Applied Physics, Volume: 131, Issue: 13, Publication date: 2022-04-07, Pages: 134305-1–134305-6
Authors: Dhouibi, M., Haffouz, S., Jin, J., Giner, L., Mnaymneh, K., Poole, P. J., Dalacu, D., Kalboussi, A., Williams, R. L.
Subject Terms: quantum dots, photoluminescence, nanowire, telecom, epitaxy, temperature measurement, temperature distribution, excitons, photonics
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Relation: 2021 Photonics North (PN), 2021 Photonics North (PN), May 31 - June 2, 2021, Toronto, ON, Canada, ISBN: 978-1-6654-4483-5, Publication date: 2021-05-31
Subject Terms: gallium oxide, epitaxy, thermal budget, plasma-enhanced ALD, preferred orientation, triethylgallium, wide bandgap, low temperature
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Relation: ACS Applied Materials & Interfaces, Volume: 12, Issue: 39, Publication date: 2020-09-30, Pages: 44225–44237
Authors: Pitts, O. J., Hisko, M., Benyon, W., Bonneville, G., Storey, C., SpringThorpe, A. J.
Subject Terms: selective epitaxy, metalorganic vapor phase epitaxy, phosphides, semiconducting III-V materials, avalanche photodiodes
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Relation: Journal of Crystal Growth, Volume: 470, Publication date: 2017-04-25, Pages: 149–153
Authors: Haffouz, Sofiane, Zeuner, Katharina D., Dalacu, Dan, Poole, Philip J., Lapointe, Jean, Poitras, Daniel, Mnaymneh, Khaled, Wu, Xiaohua, Couillard, Martin, Korkusinski, Marek, Schöll, Eva, Jöns, Klaus D., Zwiller, Valery, Williams, Robin L.
Subject Terms: chemical beam epitaxy, epitaxial growth, nanowire, photoluminescence, quantum dot, selective growth, single-photon source, vapor−liquid−solid
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Relation: Nano Letters, Volume: 18, Issue: 5, Publication date: 2018-04-04, Pages: 3047–3052
Availability:
https://doi.org/10.1021/acs.nanolett.8b00550
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Authors: Zhao, Songrui, Mi, Zetian
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Relation: Crystals, Volume: 7, Issue: 9, Publication date: 2017-09-01
Availability:
https://doi.org/10.3390/cryst7090268
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Authors: Tsybeskov, L., Mala, S. A., Wang, X., Baribeau, J.-M., Wu, X., Lockwood, D. J.
Subject Terms: Nanostructures, Molecular Beam Epitaxy, Inelastic Light Scattering, Raman Scattering
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Relation: Solid State Communications, Volume: 245, Publication date: 2016-07-09, Pages: 25–30
Availability:
https://doi.org/10.1016/j.ssc.2016.07.008
https://nrc-publications.canada.ca/eng/view/accepted/?id=e7469215-77b6-45da-b380-175305bd4da2
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Authors: Dalacu, D., Kam, A., Austing, D.G., Poole, P.J.
Subject Terms: Catalyst particles, Complex sequences, Design structure, Nanophotonic devices, Selective-area epitaxy, Semiconductor nanowire, Vapor-liquid-solid epitaxies, VLS, Coalescence, Drops, Epitaxial growth, Nanophotonics, Semiconductor devices, Nanowires
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Relation: Nano Letters, Volume: 13, Issue: 6, Publication date: 2013, Pages: 2676–2681
Authors: Pitts, O. J., Benyon, W., Goodchild, D., Springthorpe, A. J.
Subject Terms: Diffusion, Metalorganic chemical vapor deposition, Metalorganic vapor phase epitaxy, Organometallic vapor phase epitaxy, Semiconducting indium phosphide
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Relation: Journal of Crystal Growth, 18th American Conference on Crystal Growth and Epitaxy (ACCGE-18), July 31 to August 5, 2011, Monterey, California, U.S.A., Volume: 352, Issue: 1, Publication date: 2012-08-01, Pages: 249–252; pii:S0022024811008335
Authors: Skierbiszewski, C., Siekacz, M., Turski, H., Muzioł, G., Sawicka, M., Feduniewicz-Zmuda, A., Cywiński, G., Cheze, C., Grzanka, S., Perlin, P., Wiśniewski, P., Wasilewski, Z.R., Porowski, S.
Subject Terms: Continuous wave lasing, Differential gain, GaN substrate, Laser structures, Optical modes, Optical output power, Plasma-assisted molecular beam epitaxy, Room temperature, Threading dislocation densities, Threshold currents, Gallium nitride, Molecular beam epitaxy, Epitaxial growth
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Relation: Applied Physics Express, Volume: 5, Issue: 2, Publication date: 2012
Authors: Turski, H., Siekacz, M., Sawicka, M., Cywinski, G., Krysko, M., Grzanka, S., Smalc-Koziorowska, J., Grzegory, I., Porowski, S., Wasilewski, Z.R., Skierbiszewski, C.
Subject Terms: Gallium flux, Growth mechanisms, Miscut angle, Nitrogen fluxes, Phenomenological models, Plasma assisted molecular beam epitaxy, Epitaxial growth, Gallium, Gallium alloys, Gallium compounds, Indium, Molecular beam epitaxy, Molecular beams
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Relation: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Volume: 29, Issue: 3, Publication date: 2011
Authors: Siekacz, M., Sawicka, M., Turski, H., Cywiski, G., Khachapuridze, A., Perlin, P., Suski, T., Bokowski, M., Smalc-Koziorowska, J., Kryko, M., Kudrawiec, R., Syperek, M., Misiewicz, J., Wasilewski, Z., Porowski, S., Skierbiszewski, C.
Subject Terms: Dissociation rates, GaN substrate, Green laser, Higher temperatures, Indium content, InGaN quantum wells, Laser structures, Lasing conditions, Lasing wavelength, Nitrogen fluxes, Optical qualities, Optically pumped, Piezo-electric fields, Plasma assisted molecular beam epitaxy, Dissociation, Electric fields, Epitaxial growth, Gallium nitride, Growth temperature, Indium, Molecular beam epitaxy, Pumping (laser), Quantum well lasers, Semiconductor quantum wells, Optically pumped lasers
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Relation: Journal of Applied Physics, Volume: 110, Issue: 6, Publication date: 2011
Authors: Beaudry, A.L., Laforge, J.M., Tucker, R.T., Sorge, J.B., Adamski, N.L., Li, P., Taschuk, M.T., Brett, M.J.
Subject Terms: Branched nanowires, Glancing Angle Deposition, Indium tin oxide, Nanotrees, Vapor-liquid-solid, Epitaxy
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Relation: Nano Letters, Volume: 14, Issue: 4, Publication date: 2014-03-14, Pages: 1797–1803
Authors: Benkouider, A., Ronda, A., Gouyé, A., Herrier, C., Favre, L., Lockwood, D. J., Rowell, N. L., Delobbe, A., Sudraud, P., Berbezier, I.
Subject Terms: nanowires (NWs), ordering, molecular beam epitaxy (MBE), selective growth, focused ion beam (FIB) patterning, photoluminescence
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Relation: Nanotechnology, Volume: 25, Issue: 33, Publication date: 2014
Authors: Tay, L., Lockwood, D. J., Baribeau, J. -M., Wu, X., Sproule, G. I.
Subject Terms: amorphous semiconductonrs, thin films, epitaxy, silicon, molecular beam epitaxy
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Relation: Journal of Vacuum Science and Technology A, Volume: 22, Issue: 3, Publication date: 2004, Pages: 943–947
Availability:
https://doi.org/10.1116/1.1676345
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Authors: Briggs, R.M., Frez, C., Bagheri, M., Borgentun, C.E., Gupta, J.A., Witinski, M.F., Anderson, J.G., Forouhar, S.
Subject Terms: Absorption lines, Current thresholds, Distributed-feedback, Gas detection, InGaAsSb, Isotopologues, Modal characteristics, Multi-quantum well structures, Output power, Second orders, Single longitudinal mode, Single mode, Single mode emission, Molecular beam epitaxy, Ridge waveguides, Semiconductor lasers, Distributed feedback lasers
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Relation: Optics Express, Volume: 21, Issue: 1, Publication date: 2013, Pages: 1317–1323
Authors: Akbari-Sharbaf, A., Baribeau, J.-M., Wu, X., Lockwood, D.J., Fanchini, G.
Subject Terms: Molecular beam epitaxy, Disordered silicon, Defects, Electron spin resonance, Microstructure
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Relation: Thin Solid Films, Volume: 527, Publication date: 2013, Pages: 38–44
Authors: Lockwood, David J., Rowell, Nelson L., Barbagiovanni, Eric G., Goncharova, Lyudmila V., Simpson, Peter J., Berbezier, Isabelle, Amiard, Guillaume, Favre, Luc, Ronda, Antoine, Faustini, Marco, Grosso, David
Subject Terms: Absolute intensity, Efficiency curves, Energy dependence, Near-infrared bands, Photoluminescence efficiency, Self-assembled Ge quantum dots, Thermal-annealing, Transmission electron, Atomic force microscopy, Germanium, Graphene, Molecular beam epitaxy, Photoluminescence, Size distribution
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Relation: Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5, 223rd ECS Meeting, 5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications, May 12-17, 2013, Toronto, ON, Canada, ISBN: 9781607683742, Publication date: 2013, Pages: 185–206