Contributors: 20135536
Subject Terms: beta-Ga2O3, homoepitaxy, molecular beam epitaxy, step-flow growth
Relation: http://hdl.handle.net/2433/78680; http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=KyotoUniv&SrcApp=KyotoUniv&DestLinkType=FullRecord&KeyUT=ISI:000257389100006&DestApp=WOS; THIN SOLID FILMS; 516; 17; 5768; 5771
Authors: Naritsuka, Masahiro
Contributors: 松田, 祐司, 石田, 憲二, 寺嶋, 孝仁, 成塚, 政裕, ナリツカ, マサヒロ
Subject Terms: Strongly correltaed materials, Heavy fermions, Superconductivity, Quantum criticality, Rashba effect, Superlattice, Molecular beam epitaxy
Time: 400
File Description: application/pdf
Relation: http://hdl.handle.net/2433/253073; 14301甲第22238号; 14301
Authors: Oshima, Takayoshi, Okuno, Takeya, Fujita, Shizuo
Contributors: 20135536
Subject Terms: Ga2O3, molecular beam epitaxy, c-plane sapphire, deep-ultraviolet photodetector
Relation: http://hdl.handle.net/2433/67263; http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=KyotoUniv&SrcApp=KyotoUniv&DestLinkType=FullRecord&KeyUT=ISI:000251220000008&DestApp=WOS; JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS; 46; 11; 7217; 7220
Contributors: 20135536
Subject Terms: zinc nitride, Zn3N2, nitride thin films, molecular beam epitaxy, a-plane sapphire, heteroepitaxy
Relation: http://hdl.handle.net/2433/35843; http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=KyotoUniv&SrcApp=KyotoUniv&DestLinkType=FullRecord&KeyUT=ISI:000242323200024&DestApp=WOS; JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS; 45; 11; 8653; 8655
Contributors: 20135536
Subject Terms: low-dimensional structures, molecular beam epitaxy, superlattices, oxides, semiconducting II-VI materials
Relation: http://hdl.handle.net/2433/3536; http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=KyotoUniv&SrcApp=KyotoUniv&DestLinkType=FullRecord&KeyUT=ISI:000228916300048&DestApp=WOS; JOURNAL OF CRYSTAL GROWTH; 278; 1-4; 264; 267
Authors: Onojima, N, Kaido, J, Suda, J, Kimoto, T, Matsunami, H
Contributors: 00293887, 80225078
Subject Terms: AlN, SiC, molecular-beam epitaxy (MBE), MIS, interface states
Relation: http://hdl.handle.net/2433/8856; http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=KyotoUniv&SrcApp=KyotoUniv&DestLinkType=FullRecord&KeyUT=ISI:000222802200374&DestApp=WOS; SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2; 457-460; 1569; 1572
Authors: Bradford, C, Urbaszek, B, Funato, M, Graham, TCM, McGhee, EJ, Warburton, RJ, Prior, KA, Cavenett, B
Contributors: 70240827
Subject Terms: atomic force microscopy, nanostructures, molecular beam epitaxy, semiconducting II-VT materials
Relation: http://hdl.handle.net/2433/3249; http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=KyotoUniv&SrcApp=KyotoUniv&DestLinkType=FullRecord&KeyUT=ISI:000182179800108&DestApp=WOS; JOURNAL OF CRYSTAL GROWTH; 251; 1-4; 581; 585
Authors: Suda, J, Matsunami, H
Subject Terms: substrates, molecular beam epitaxy, nitrides
Relation: http://hdl.handle.net/2433/7365; http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=KyotoUniv&SrcApp=KyotoUniv&DestLinkType=FullRecord&KeyUT=ISI:000176512900041&DestApp=WOS; JOURNAL OF CRYSTAL GROWTH; 237; 1114; 1117
Authors: Onojima, N, Suda, J, Matsunami, H
Contributors: 00293887
Subject Terms: high resolution X-ray diffraction, molecular beam epitaxy, nitrides, semiconducting III-V materials
Relation: http://hdl.handle.net/2433/6772; http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=KyotoUniv&SrcApp=KyotoUniv&DestLinkType=FullRecord&KeyUT=ISI:000176512900021&DestApp=WOS; JOURNAL OF CRYSTAL GROWTH; 237; 1012; 1016
Authors: Onojima, N, Suda, J, Matsunami, H
Contributors: 00293887
Subject Terms: 6H-SiC, AlN, HCl gas etching, insulator, MIS, molecular beam epitaxy
Relation: http://hdl.handle.net/2433/8857; http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=KyotoUniv&SrcApp=KyotoUniv&DestLinkType=FullRecord&KeyUT=ISI:000177321100352&DestApp=WOS; SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS; 389-3; 1457; 1460
Contributors: 20135536
Subject Terms: blue luminescence, segregation, molecular beam epitaxy, zinc compounds, semiconducting IIVI materials
Relation: http://hdl.handle.net/2433/7021; http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=KyotoUniv&SrcApp=KyotoUniv&DestLinkType=FullRecord&KeyUT=ISI:000176512700100&DestApp=WOS; JOURNAL OF CRYSTAL GROWTH; 237; 514; 517
Authors: Onojima, N, Suda, J, Matsunami, H
Subject Terms: AIN, 6H-SiC, (1120) face, molecular-beam epitaxy (MBE), reflection high-energy electron diffraction (RHEED), microscopic Raman scattering spectroscopy
Relation: http://hdl.handle.net/2433/6770; http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=KyotoUniv&SrcApp=KyotoUniv&DestLinkType=FullRecord&KeyUT=ISI:000182826600002&DestApp=WOS; JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS; 41; 12A; L1348; L1350
Authors: Suda, J, Kurobe, T, Nakamura, S, Matsunami, H
Subject Terms: GaN, 3C-SiC, selective area growth, molecular beam epitaxy, focused ion beam
Relation: http://hdl.handle.net/2433/7364; http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=KyotoUniv&SrcApp=KyotoUniv&DestLinkType=FullRecord&KeyUT=ISI:000167218300003&DestApp=WOS; JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS; 39; 11A; L1081; L1083
Authors: Furukawa, Y, Noda, S
Contributors: 10208358
Subject Terms: InAs/GaAs quantum dot, organometallic vapor-phase epitaxy, molecular beam epitaxy, anisotropic structure
Relation: http://hdl.handle.net/2433/3631; http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=KyotoUniv&SrcApp=KyotoUniv&DestLinkType=FullRecord&KeyUT=ISI:000165957500012&DestApp=WOS; JOURNAL OF CRYSTAL GROWTH; 220; 425; 431
Authors: Hatayama, T, Fuyuki, T, Nakamura, S, Kurobe, K, Kimoto, T, Matsunami, H
Contributors: 80225078
Subject Terms: gas source molecular beam epitaxy, RHEED, surface structure
Relation: http://hdl.handle.net/2433/8753; http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=KyotoUniv&SrcApp=KyotoUniv&DestLinkType=FullRecord&KeyUT=ISI:000165996700087&DestApp=WOS; SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2; 338-3; 361; 364
Authors: Shimozawa, Masaaki
Contributors: 松田, 祐司, 芝内, 孝禎, 石田, 憲二, 下澤, 雅明, シモザワ, マサアキ
Subject Terms: Superlattice, molecular beam epitaxy method, heavy fermion superconductor, Kondo hole, inversion symmetry breaking
Time: 400
File Description: application/pdf
Relation: http://hdl.handle.net/2433/188463; 14301甲第18052号; 14301