Authors: Park, Mun Do, Min, Jung Wook, Lee, Jun Yeob, Hwang, Hyeong Yong, Kim, Cihyun, Kang, Seokjin, Kang, Chang Mo, Park, Jeong Hwan, Jho, Young Dahl, Lee, Dong Seon
Contributors: Photonics Laboratory, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia, School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
Subject Terms: A1. Nanostructures, A1. Growth models, A1. Characterization, A3. Molecular beam epitaxy, B1. Nitrides, B2. Semiconducting III-V materials
Relation: https://linkinghub.elsevier.com/retrieve/pii/S0022024819304488; Park, M.-D., Min, J.-W., Lee, J.-Y., Hwang, H.-Y., Kim, C., Kang, S., … Lee, D.-S. (2019). Effects of nitrogen flow rate on the morphology and composition of AlGaN nanowires grown by plasma-assisted molecular beam epitaxy. Journal of Crystal Growth, 528, 125233. doi:10.1016/j.jcrysgro.2019.125233; http://hdl.handle.net/10754/659081; Journal of Crystal Growth
Authors: Zhao, Chao, Ng, Tien Khee, Elafandy, Rami T., Prabaswara, Aditya, Consiglio, Giuseppe Bernardo, Ajia, Idris A., Roqan, Iman S., Janjua, Bilal, Shen, Chao, Eid, Jessica, Alyamani, Ahmed Y., El-Desouki, Munir M., Ooi, Boon S.
Contributors: Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, Electrical Engineering Program, KAUST Solar Center (KSC), Material Science and Engineering Program, Photonics Laboratory, Physical Science and Engineering (PSE) Division, Semiconductor and Material Spectroscopy (SMS) Laboratory, Technology Transfer, National Center for Nanotechnology, King Abdulaziz City for Science and Technology (KACST), Riyadh 11442-6086, Saudi Arabia, King Abdullah University of Science and Technology (KAUST)
Subject Terms: efficiency droop, light-emitting diode, molecular beam epitaxy, Quantum-disks-in-nanowire
Relation: Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics 2016, 16 (7):4616 Nano Letters; http://hdl.handle.net/10754/617876; Nano Letters
Authors: Fireman, Micha N., L'Heureux, Guillaume, Wu, Feng, Mates, Tom, Young, Erin C., Speck, James S.
Contributors: UC Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA
Subject Terms: Molecular beam epitaxy, Ammonia molecular beam epitaxy, Germanium doping, Gallium nitride, Tunnel junctions
Relation: https://linkinghub.elsevier.com/retrieve/pii/S0022024818306213; Fireman, M. N., L’Heureux, G., Wu, F., Mates, T., Young, E. C., & Speck, J. S. (2019). High germanium doping of GaN films by ammonia molecular beam epitaxy. Journal of Crystal Growth, 508, 19–23. doi:10.1016/j.jcrysgro.2018.12.009; 2-s2.0-85058782448; JOURNAL OF CRYSTAL GROWTH; 19-23; http://hdl.handle.net/10754/678649; 508; WOS:000456430200003
Authors: Zhao, Chao, Ng, Tien Khee, Jahangir, Shafat, Frost, Thomas, Bhattacharya, Pallab, Ooi, Boon S.
Contributors: Photonics Laboratory, Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan
Subject Terms: InGaN/GaN quantum-disks-in-nanowire, light-emitting diodes, laser, Molecular Beam Epitaxy
Relation: Zhao, C., Ng, T. K., Jahangir, S., Frost, T., Bhattacharya, P., & Ooi, B. S. (2016). InGaN/GaN nanowire LEDs and lasers. 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). doi:10.1109/nusod.2016.7547051; http://hdl.handle.net/10754/606856
Authors: Tangi, Malleswararao, Mishra, Pawan, Tseng, Chien-Chih, Ng, Tien Khee, Hedhili, Mohamed N., Anjum, Dalaver H., Alias, Mohd Sharizal, Wei, Nini, Li, Lain-Jong, Ooi, Boon S.
Contributors: Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, Electrical Engineering Program, Electron Microscopy, Imaging and Characterization Core Lab, KAUST Catalysis Center (KCC), Material Science and Engineering Program, Photonics Laboratory, Physical Science and Engineering (PSE) Division, Surface Science
Subject Terms: Gan, Molecular Beam Epitaxy, Band Alignment, Hrxps, Single Layer Wse2, 3D/2d Heterojunction
Relation: Tangi M, Mishra P, Tseng C-C, Ng TK, Hedhili MN, et al. (2017) Band Alignment at GaN/Single-Layer WSe2 Interface. ACS Applied Materials & Interfaces 9: 9110–9117. Available: http://dx.doi.org/10.1021/acsami.6b15370.; http://hdl.handle.net/10754/623191; ACS Applied Materials & Interfaces
Authors: Wang, Ping, Wang, Xinqiang, Wang, Tao, Tan, Chih Shan, Sheng, Bowen, Sun, Xiaoxiao, Li, Mo, Rong, Xin, Zheng, Xiantong, Chen, Zhaoying, Yang, Xuelin, Xu, Fujun, Qin, Zhixin, Zhang, Jian, Zhang, Xixiang, Shen, Bo
Contributors: Material Science and Engineering Program, Physical Science and Engineering (PSE) Division, State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 P. R. China, Collaborative Innovation Center of Quantum Matter, Department of Chemistry, National Tsing Hua University, Hsinchu 30013 Taiwan, Microsystem and Terahertz Research Center, China Academy of Engineering Physics (CAEP), Chengdu 610200 P. R. China
Subject Terms: Gallium nitride, Hierarchical nanotripods, Lattice symmetry, Microstructures, Molecular beam epitaxy, Nanowires
Relation: Wang P, Wang X, Wang T, Tan C-S, Sheng B, et al. (2017) Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods. Advanced Functional Materials: 1604854. Available: http://dx.doi.org/10.1002/adfm.201604854.; http://hdl.handle.net/10754/622807; Advanced Functional Materials
Authors: Prabaswara, Aditya, Tien Khee Ng, Anjum, Dalaver H., Wei, Nini, Zhao, Chao, Albadri, Abdulrahman M., Alyamani, Ahmed Y., EI-Desouki, Munir M., Ooi, Boon S.
Contributors: Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division, Electrical and Computer Engineering Program, Electron Microscopy, Photonics Laboratory, Physical Characterization
Subject Terms: GaN, InGaN, molecular beam epitaxy, nanowire
Relation: http://ieeexplore.ieee.org/document/7439266/; Prabaswara, A., Ng, T. K., Anjum, D., Wei, N., Zhao, C., Albadri, A. M., … Ooi, B. S. (2015). Origin of competing blue and green emission in InGaN/GaN quantum-disks in nanowires heterostructure. 2015 IEEE Nanotechnology Materials and Devices Conference (NMDC). doi:10.1109/nmdc.2015.7439266; 2-s2.0-84968883422; http://hdl.handle.net/10754/670638; WOS:000380447300037
Authors: Alshehri, Bandar, Dogheche, Karim, Belahsene, Sofiane, Janjua, Bilal, Ramdane, Abderrahim, Patriarche, Gilles, Ng, Tien Khee, Ooi, Boon S., Decoster, Didier, Dogheche, Elhadj
Contributors: Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, Electrical Engineering Program, Photonics Laboratory, Institute of Electronics Microelectronics and Nanotechnology, Optoelectronics Group (IEMN CNRS UMR 8520), Villeneuve d'ascq, , France, Laboratory for Photonics Nanostructures, CNRS, Route de Nozay, Marcoussis, 91460, , France
Subject Terms: metalorganic deposition, molecular beam epitaxy (MBE), scanning transmission electron microscopy (STEM)
Relation: Alshehri B, Dogheche K, Belahsene S, Janjua B, Ramdane A, et al. (2016) Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics. MRS Advances 1: 1735–1742. Available: http://dx.doi.org/10.1557/adv.2016.417.; http://hdl.handle.net/10754/627281; MRS Advances
Authors: Janjua, Bilal, Ng, Tien Khee, Zhao, Chao, Prabaswara, Aditya, Consiglio, Giuseppe Bernardo, Priante, Davide, Shen, Chao, Elafandy, Rami T., Anjum, Dalaver H., Alhamoud, Abdullah A., Alatawi, Abdullah A., Yang, Yang, Alyamani, Ahmed Y., El-Desouki, Munir M., Ooi, Boon S.
Contributors: Electron Microscopy, Imaging and Characterization Core Lab, Physical Characterization, Photonics Laboratory, National Center for Nanotechnology, King Abdulaziz City for Science and Technology (KACST), Riyadh 11442-6086, Saudi Arabia
Subject Terms: light-emitting diode, molecular beam epitaxy, nanowire, solid-state lighting, titanium, visible laser, yellow
Relation: Janjua B, Ng TK, Zhao C, Prabaswara A, Consiglio GB, et al. (2016) True Yellow Light-Emitting Diodes as Phosphor for Tunable Color-Rendering Index Laser-Based White Light. ACS Photonics 3: 2089–2095. Available: http://dx.doi.org/10.1021/acsphotonics.6b00457.; http://hdl.handle.net/10754/622490; ACS Photonics
Authors: Young, Erin C., Yonkee, Benjamin P., Wu, Feng, Saifaddin, Burhan K., Cohen, Daniel A., DenBaars, Steve P., Nakamura, Shuji, Speck, James S.
Contributors: University of California, Santa Barbara, Santa Barbara, United States
Subject Terms: A3 Molecular beam epitaxy, B1 Nitrides, B2 Semiconducting gallium compounds, B3 Light emitting diodes
Relation: Young EC, Yonkee BP, Wu F, Saifaddin BK, Cohen DA, et al. (2015) Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic ( 20 2 ¯ 1 ) AlGaN/GaN buffer layers. Journal of Crystal Growth 425: 389–392. Available: http://dx.doi.org/10.1016/j.jcrysgro.2015.02.081.; http://hdl.handle.net/10754/600122; Journal of Crystal Growth
Authors: Zhang, Meng, Banerjee, Animesh, Bhattacharya, Pallab
Contributors: University Michigan Ann Arbor, Ann Arbor, United States
Subject Terms: Light emitting diodes, Molecular beam epitaxy, Nitrides, Self-organized quantum dots
Relation: Zhang M, Banerjee A, Bhattacharya P (2011) High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm). Journal of Crystal Growth 323: 470–472. Available: http://dx.doi.org/10.1016/j.jcrysgro.2010.12.038.; http://hdl.handle.net/10754/598477; Journal of Crystal Growth
Authors: Prabaswara, Aditya
Contributors: Ooi, Boon S., Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division, Ohkawa, Kazuhiro, Alshareef, Husam N., Tchernycheva, Maria
Subject Terms: Gallium nitride, Nanowire, Molecular beam epitaxy, Optoelectronics
Relation: Prabaswara, A. (2019). Study of III-nitride Nanowire Growth and Devices on Unconventional Substrates. KAUST Research Repository. https://doi.org/10.25781/KAUST-08V79; http://hdl.handle.net/10754/656923
Authors: Mishra, Pawan
Contributors: Ooi, Boon S., Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division, Ohkawa, Kazuhiro, Zhang, Xixiang, Grandjean, Nicolas
Subject Terms: Molecular Beam Epitaxy, III-nitrides, 2D TMDs, 3D/2d Heterojunctions
Relation: Mishra, P. (2017). III-nitrides, 2D transition metal dichalcogenides, and their heterojunctions. KAUST Research Repository. https://doi.org/10.25781/KAUST-IS022; http://hdl.handle.net/10754/623463