Authors: Carini, GA, ARNONE, Claudio, Bolotnikov, AE, Camarda, GS, De Wames, R, Dinan, JH, Markunas, JK, Raghothamachar, B, Sivananthan, S, Smith, R, Zhao, J, Zhong, Z, James, RB
Contributors: Carini, GA, Arnone, C, Bolotnikov, AE, Camarda, GS, De Wames, R, Dinan, JH, Markunas, JK, Raghothamachar, B, Sivananthan, S, Smith, R, Zhao, J, Zhong, Z, James, RB
Subject Terms: Cadmium telluride, Molecular beam epitaxy, Cadmium alloys, Settore ING-INF/01 - Elettronica
Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000238819400060; volume:35; issue:6; firstpage:1495; lastpage:1502; numberofpages:7; journal:JOURNAL OF ELECTRONIC MATERIALS; http://hdl.handle.net/10447/61176; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-33746211389
Authors: Butté R., Carlin J. -F., Feltin E., Gonschorek M., Nicolay S., Christmann G., Simeonov D., Castiglia A., Dorsaz J., Buehlmann H. J., Christopoulos S., Baldassarri Höger Von Högersthal, Grundy A. J. D., Mosca M., Pinquier C., Py M. A., Demangeot F., Frandon J., Lagoudakis P. G., Baumberg J. J., Grandjean N.
Contributors: Butté R., Carlin J.-F., Feltin, E., Gonschorek, M., Nicolay, S., Christmann, G., Simeonov, D., Castiglia, A., Dorsaz, J., Buehlmann, H.J., Christopoulos, S., Baldassarri Höger Von Högersthal, G., Grundy A.J.D., Mosca, M., Pinquier, C., Py, M.A., Demangeot, F., Frandon, J., Lagoudakis, P.G., Baumberg, J.J., Grandjean, N.
Subject Terms: MOLECULAR-BEAM EPITAXY, VAPOR-PHASE EPITAXY, DISTRIBUTED BRAGG REFLECTORS, FIELD-EFFECT TRANSISTORS, ALGAN/GAN QUANTUM-WELLS, CRYSTAL GALLIUM NITRIDE, SURFACE-EMITTING LASERS, AL1-XINXN THIN-FILMS, III-V NITRIDES, OPTICAL-PROPERTIES, Settore ING-INF/01 - Elettronica
Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000249983900017; volume:40; issue:20; firstpage:6328; lastpage:6344; numberofpages:17; journal:JOURNAL OF PHYSICS D. APPLIED PHYSICS; http://hdl.handle.net/10447/21532; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-36048993925
Authors: DUBOZ, JY, BRIERE DE LISLE, N, DUA, L, LEGAGNEUX, P, MOSCA, Mauro, REVERCHON, JL, DAMILANO, B, GRANDJEAN, N, SEMOND, F, MASSIES, J, DUDEK, R, POITRAS, D, CASSIDY, T.
Contributors: DUBOZ, JY, BRIERE DE LISLE, N, DUA, L, LEGAGNEUX, P, MOSCA, M, REVERCHON, JL, DAMILANO, B, GRANDJEAN, N, SEMOND, F, MASSIES, J, DUDEK, R, POITRAS, D, CASSIDY, T
Subject Terms: Dielectric mirror, Gallium nitride, Light emitting diode, Membrane, Microcavity, Molecular beam epitaxy, Settore ING-INF/01 - Elettronica
Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000181161300025; volume:42; issue:1; firstpage:118; lastpage:121; numberofpages:4; journal:JAPANESE JOURNAL OF APPLIED PHYSICS. PART 1, REGULAR PAPERS & SHORT NOTES; http://hdl.handle.net/10447/45220; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-0037667823; http://iopscience.iop.org/article/10.1143/JJAP.42.118/meta