Authors: Golias, E., Weschke, E., Flanagan, T., Schierle, E., Richardella, A., Rienks, E. D. L., Mandal, P. S., Varykhalov, A., S nchez Barriga, J., Radu, F., Samarth, N., Rader, O.
Subject Terms: doping, magnetic materials, Hall effect, epitaxy, graphene
File Description: application/pdf
Authors: Dai, L., Niu, G., Zhao, J., Zhao, H., Liu, Y., Wang, Y., Zhang, Y., Wu, H., Wang, L., Pfützenreuter, D., Schwarzkopf, J., Dubourdieu, C., Schroeder, T., Ye, Z. G., Xie, Y. H., Ren, W.
Subject Terms: Ferroelectrics, graphene, epitaxy, transfer layer
Authors: Hannappel, T., Visbeck, S., Töben, L., Willig, F.
Subject Terms: atomic surface structure, reflectance anisotropy spectroscopy, p rich, Inp 001, photoemission, InP, reconstruction, epitaxy, RDS
Authors: Rau, B., Sieber, I., Selle, B., Brehme, S., Knipper, U., Gall, S., Fuhs, W.
Subject Terms: silicon, low temperature epitaxy, ECRCVD, electron backscattered diffraction
Authors: Möller, K., Kollonitsch, Z., Giesen, Ch., Heuken, M., Willig, F., Hannappel, T.
Authors: Schwarzkopf, J., Selle, B., Bohne, W., Röhrich, J., Sieber, I., Fuhs, W.
Subject Terms: chemical vapor deposition, crystalline silicon, beam epitaxy, plasma thickness, Si 100
Authors: Schwarzkopf, J., Selle, B., Schmidbauer, M., Fuhs, W.
Subject Terms: Si epitaxy, plasma enhanced chemical vapor deposition, growth rate, X ray diffraction, disorder
Authors: Hunger, R., Pettenkofer, C., Scheer, R.
Subject Terms: Schottky barrier heights, molecular beam epitaxy, chalcopyrite semiconductors, escape depth, score level, surface, spectroscopy, CuInS2, Si, Silicon, adsorption
Authors: Reinig, P., Selle, B., Fenske, F., Fuhs, W., Alex, V., Birkholz, M.
Subject Terms: polycrystalline silicon, preferred grain orientation, assisted deposition, ion, irradiation, beam epitaxy, temperature, bomardment, Si, Ar
Authors: Brehme, S., Kanschat, P., Lips, K., Sieber, I., Fuhs, W.
Subject Terms: microcrystalline silicon, grain boundaries, mobility, epitaxy, solar cells