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1
Academic Journal
Long catalyst-free InAs nanowires grown on silicon by HVPE

Authors: Grégoire, Gabin, Gil, Evelyne, Zeghouane, Mohammed, Bougerol, Catherine, Hijazi, Hadi, Castelluci, Dominique, Dubrovskii, Vladimir, Trassoudaine, Agnès, Goktas, Nebile Isik, Lapierre, Ray, André, Yamina

Contributors: Institut Pascal (IP), Centre National de la Recherche Scientifique (CNRS)-Université Clermont Auvergne (UCA)-Institut national polytechnique Clermont Auvergne (INP Clermont Auvergne), Université Clermont Auvergne (UCA)-Université Clermont Auvergne (UCA), ITMO University Russia, Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), St Petersburg State University (SPbU), Department of Engineering Physics, McMaster University, Hamilton, Ontario

Superior Title: EISSN: 1466-8033 ; CrystEngComm ; https://uca.hal.science/hal-03137102 ; CrystEngComm, 2021, 23 (2), pp.378-384. ⟨10.1039/d0ce01385d⟩

Subject Terms: Indium Arsenide, Nanowires, Hydride Vapor Phase Epitaxy, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [PHYS]Physics [physics], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

Relation: hal-03137102; https://uca.hal.science/hal-03137102; https://uca.hal.science/hal-03137102/document; https://uca.hal.science/hal-03137102/file/Long%20catalyst-free%20InAs%20nanowires.pdf

Availability: https://doi.org/10.1039/d0ce01385d
https://uca.hal.science/hal-03137102
https://uca.hal.science/hal-03137102/document
https://uca.hal.science/hal-03137102/file/Long%20catalyst-free%20InAs%20nanowires.pdf

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2
Academic Journal
Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy

Authors: Zeghouane, Mohammed, Avit, Geoffrey, Andre, Yamina, Taliercio, Thierry, Ferret, Pierre, Gil, Evelyne, Castelluci, Dominique, Disseix, Pierre, Leymarie, Joël, Tournié, Eric, Trassoudaine, Agnès

Contributors: Institut Pascal (IP), SIGMA Clermont (SIGMA Clermont)-Université Clermont Auvergne 2017-2020 (UCA 2017-2020 )-Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire des sciences et matériaux pour l'électronique et d'automatique (LASMEA), Université Blaise Pascal - Clermont-Ferrand 2 (UBP)-Centre National de la Recherche Scientifique (CNRS), CNRSFEDERANRCPER AURA, CNRS PRC1300 CNRS-JSPS, CPER MMASYF AURA, GANEX ANR-11-LABX-0014, IMobS3 ANR-10-LABX-0016, ANR-16-IDEX-0001,CAP 20-25,CAP 20-25(2016)

Superior Title: ISSN: 1528-7483.

Subject Terms: Hydride Vapor Phase Epitaxy, Indium Nitride, Selective Area Growth, Nanorods 2, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]

Relation: hal-02532717; https://hal.science/hal-02532717; https://hal.science/hal-02532717/document; https://hal.science/hal-02532717/file/Morphological%20control%20of%20InN%20nanorods%20by%20SAG.pdf

Availability: https://doi.org/10.1021/acs.cgd.9b01346
https://hal.science/hal-02532717
https://hal.science/hal-02532717/document
https://hal.science/hal-02532717/file/Morphological%20control%20of%20InN%20nanorods%20by%20SAG.pdf

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3
Academic Journal
Formation of voids in selective area growth of InN nanorods in SiN x on GaN templates

Authors: Zeghouane, Mohammed, Andre, Yamina, Avit, Geoffrey, Jridi, Jihen, Bougerol, Catherine, Coulon, Pierre-Marie, Ferret, Pierre, Castelluci, Dominique, Gil, Evelyne, Shields, Philip, Dubrovskii, Vladimir G., Trassoudaine, Agnes

Contributors: Institut Pascal (IP), SIGMA Clermont (SIGMA Clermont)-Université Clermont Auvergne 2017-2020 (UCA 2017-2020 )-Centre National de la Recherche Scientifique (CNRS), ITMO University Russia, Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), University of Bath Bath, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), CNRS PRC1300 CNRS-JSPSANR-11-LABX-0014ANR-10-LABX-1601Auvergne FEDER FundsIDEX-SITE 16mIDEX-0001 CAP 20-25Russian Foundation for Basic ResearchEPSRC EP/M015181/1CPER MMASYF AURA, CNRS PRC1300 CNRS-JSPS, ANR-11-LABX-0014, ANR-10-LABX-1601, Auvergne FEDER Funds, IDEX-SITE 16mIDEX-0001 CAP 20-25, Russian Foundation for Basic Research, EPSRC EP/M015181/1, CPER MMASYF AURA, ANR-16-IDEX-0001,CAP 20-25,CAP 20-25(2016)

Superior Title: ISSN: 2399-1984 ; Nano Futures ; https://hal.uca.fr/hal-02992214 ; Nano Futures, 2020, 4 (2), pp.025002. ⟨10.1088/2399-1984/ab8450⟩.

Subject Terms: Indium Nitride, Selective Area Growth, Hydride Vapor Phase Epitaxy, Nanorods 2, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [PHYS]Physics [physics], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

Relation: hal-02992214; https://hal.uca.fr/hal-02992214; https://hal.uca.fr/hal-02992214/document; https://hal.uca.fr/hal-02992214/file/Formation%20of%20voids%20in%20selective%20area%20growth%20of%20InN%20nanorods%20in%20SiNx%20on%20GaN%20templates.pdf

Availability: https://doi.org/10.1088/2399-1984/ab8450
https://hal.uca.fr/hal-02992214
https://hal.uca.fr/hal-02992214/document
https://hal.uca.fr/hal-02992214/file/Formation%20of%20voids%20in%20selective%20area%20growth%20of%20InN%20nanorods%20in%20SiNx%20on%20GaN%20templates.pdf

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4
Academic Journal
Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm

Authors: Li, Xin, Le Gac, G., Bouchoule, Sophie, El-Gmili, Youssef, Patriarche, G., Sundaram, Suresh, Disseix, Pierre, Reveret, François, Leymarie, Joël, Streque, Jérémy, Salvestrini, Jean-Paul, Genty, F., Dupuis, Russell, D., Li, X.-H., Voss, Paul, L., Ougazzaden, Abdallah

Contributors: School of Electrical and Computer Engineering - Georgia Insitute of Technology (ECE GeorgiaTech), Georgia Institute of Technology Atlanta, Georgia Tech Lorraine Metz, Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology Atlanta -Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté COMUE (UBFC)-Université Bourgogne Franche-Comté COMUE (UBFC), Institut Pascal (IP), Université Blaise Pascal - Clermont-Ferrand 2 (UBP)-SIGMA Clermont (SIGMA Clermont)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Center for Compound Semiconductors and School of Electrical and Computer Engineering, ANR-11-BS03-0012,VESUVE,LASER A CAVITE VERTICALE EMETTANT PAR LA SURFACE DANS LA GAMME DE L'ULTRA-VIOLET(2011)

Superior Title: ISSN: 0022-0248 ; Journal of Crystal Growth ; https://hal.science/hal-01212591 ; Journal of Crystal Growth, 2015, 432, pp.37-44. ⟨10.1016/j.jcrysgro.2015.09.013⟩.

Subject Terms: Defects, Metalorganic vapor phase epitaxy, Quantum wells, III-nitrides, DUV devices, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

Relation: hal-01212591; https://hal.science/hal-01212591; https://hal.science/hal-01212591/document; https://hal.science/hal-01212591/file/li2015.pdf

Availability: https://doi.org/10.1016/j.jcrysgro.2015.09.013
https://hal.science/hal-01212591
https://hal.science/hal-01212591/document
https://hal.science/hal-01212591/file/li2015.pdf

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5
Dissertation/ Thesis
Growth by HVPE and characterizations of III-As nanowires ; Croissance par procédé HVPE et caractérisations de nanofils III-As

Authors: Grégoire, Gabin

Contributors: Institut Pascal (IP), Centre National de la Recherche Scientifique (CNRS)-Université Clermont Auvergne (UCA)-Institut national polytechnique Clermont Auvergne (INP Clermont Auvergne), Université Clermont Auvergne (UCA)-Université Clermont Auvergne (UCA), Université Clermont Auvergne, Yamina André, Evelyne Gil

Superior Title: https://theses.hal.science/tel-03663765 ; Materials Science [cond-mat.mtrl-sci]. Université Clermont Auvergne, 2021. English. ⟨NNT : 2021UCFAC084⟩.

Subject Terms: III-As nanowires, Self-assembled growth, Selective growth, Epitaxy, HVPE, Nanofils III-As, Croissance auto-organisée, Croissance sélective, Épitaxie, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

Relation: NNT: 2021UCFAC084; tel-03663765; https://theses.hal.science/tel-03663765; https://theses.hal.science/tel-03663765/document; https://theses.hal.science/tel-03663765/file/2021UCFAC084_GREGOIRE.pdf

Availability: https://theses.hal.science/tel-03663765
https://theses.hal.science/tel-03663765/document
https://theses.hal.science/tel-03663765/file/2021UCFAC084_GREGOIRE.pdf


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6
Academic Journal
Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy

Authors: Dong, Zhenning, Andre, Yamina, Dubrovskii, Vladimir G, Bougerol, Catherine, Leroux, Christine, Ramdani, Mohammed R, Monier, Guillaume, Trassoudaine, Agnès, Castelluci, Dominique, Gil, Evelyne

Contributors: Institut Pascal (IP), SIGMA Clermont (SIGMA Clermont)-Université Clermont Auvergne 2017-2020 (UCA 2017-2020 )-Centre National de la Recherche Scientifique (CNRS), ITMO University Russia, A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences Moscow (RAS), Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 )-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 ), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Russian Science Foundation 14-22-00018, European Commission (Auvergne FEDER Funds), LabEx IMobS ANR-10-LABX-16-01, CPER

Superior Title: ISSN: 0957-4484 ; EISSN: 1361-6528 ; Nanotechnology.

Subject Terms: hydride vapor phase epitaxy, ga-catalyzed GaAs nanowires, growth mechanism, nanowire, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

Relation: hal-01658266; https://uca.hal.science/hal-01658266; PRODINRA: 390655; WOS: 000395776700002

Availability: https://doi.org/10.1088/1361-6528/aa5c6b
https://uca.hal.science/hal-01658266

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9
Dissertation/ Thesis
Study of GaN/sapphire and GaN-MOVPE selective area growth by HVPE. Application to the growth of periodic structures of low dimensionality ; Etude de l'épitaxie sélective de GaN/saphir et GaN/GaN-MOVPE par HVPE. Application à la croissance de structure périodiques de faible dimensionnalité

Authors: Tourret, Julie

Contributors: Laboratoire des sciences et matériaux pour l'électronique et d'automatique (LASMEA), Université Blaise Pascal - Clermont-Ferrand 2 (UBP)-Centre National de la Recherche Scientifique (CNRS), Université Blaise Pascal - Clermont-Ferrand II, Agnès Trassoudaine

Superior Title: https://theses.hal.science/tel-00731246 ; Electronique. Université Blaise Pascal - Clermont-Ferrand II, 2008. Français. ⟨NNT : 2008CLF21887⟩.

Subject Terms: Gallium Nitride (GaN), Hydride Vapour Phase Epitaxy (HVPE), Selective epitaxy, experimental process, Nitrure de gallium (GaN), Epitaxie en phase vapeur par la méthode aux hydrures (HVPE), épitaxie sélective, dispositif expérimental, [SPI.TRON]Engineering Sciences [physics]/Electronics

Relation: NNT: 2008CLF21887; tel-00731246; https://theses.hal.science/tel-00731246; https://theses.hal.science/tel-00731246/document; https://theses.hal.science/tel-00731246/file/2008CLF21887.pdf

Availability: https://theses.hal.science/tel-00731246
https://theses.hal.science/tel-00731246/document
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10
Academic Journal
Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability

Authors: Lekhal, Kaddour, Avit, G., André, Y., Trassoudaine, Agnès, Gil, E., Varenne, Christelle, Bougerol, Catherine, Monier, Guillaume, Castelluci, D.

Contributors: Institut Pascal (IP), Université Blaise Pascal - Clermont-Ferrand 2 (UBP)-SIGMA Clermont (SIGMA Clermont)-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)

Superior Title: ISSN: 0957-4484.

Subject Terms: MOLECULAR-BEAM EPITAXY, GROWTH, HVPE, NITRIDE, MECHANISMS, NUCLEATION, NANORODS, SILICON, GAAS, NI, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

Relation: hal-00855826; https://hal.science/hal-00855826

Availability: https://doi.org/10.1088/0957-4484/23/40/40560
https://hal.science/hal-00855826

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11
Dissertation/ Thesis
The HVPE process for the growth of III-V semiconductor nanowires ; Le procédé HVPE pour la croissance de nanofils semiconducteurs III-V

Authors: Lekhal, Kaddour

Contributors: Institut Pascal (IP), Université Blaise Pascal - Clermont-Ferrand 2 (UBP)-SIGMA Clermont (SIGMA Clermont)-Centre National de la Recherche Scientifique (CNRS), SIGMA Clermont (SIGMA Clermont)-Université Clermont Auvergne 2017-2020 (UCA 2017-2020 )-Centre National de la Recherche Scientifique (CNRS), Université Blaise Pascal - Clermont-Ferrand II, Agnès Trassoudaine

Superior Title: https://theses.hal.science/tel-00844400 ; Autre [cond-mat.other]. Université Blaise Pascal - Clermont-Ferrand II, 2013. Français. ⟨NNT : 2013CLF22339⟩.

Subject Terms: Hydride Vapour Phase Epitaxy (HVPE), Nanowires, Gallium nitride (GaN), Gallium arsenide (GaAs), Catalyst growth VLS (Vapour-Liquid-Solid), VSS (Vapour-Solid-Solid), Epitaxie en Phase Vapeur par la méthode aux Hydrures (HVPE), Arséniure de gallium (GaAs), Croissance catalytique VLS (Vapor-Liquide-Solide), Nitrure de gallium (GaN), Nanofils, VSS (Vapor-Solide- Solide), [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]

Relation: NNT: 2013CLF22339; tel-00844400; https://theses.hal.science/tel-00844400; https://theses.hal.science/tel-00844400/document; https://theses.hal.science/tel-00844400/file/LEKHAL-2013CLF22339.pdf

Availability: https://theses.hal.science/tel-00844400
https://theses.hal.science/tel-00844400/document
https://theses.hal.science/tel-00844400/file/LEKHAL-2013CLF22339.pdf


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