Authors: Hsu, Wei-Chun, Hsieh, Zhi-Ming, Lai, Ying-Yao, Lai, Chien-Jen, Chen, Wei-Ting, Peng, Lung-Han, Pan, Ci-Ling, Kung, A. H.
Contributors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science, Lai, Chien-Jen
Superior Title: IEEE
Subject Terms: waveform synthesis, quasi-phase-matching
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Relation: http://dx.doi.org/10.1109/CLEOPR.2009.5292205; Conference on Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09.; INSPEC Accession Number: 10950501; http://hdl.handle.net/1721.1/59390; Wei-Chun Hsu et al. “Generation of octave-spanning multiple harmonics for ultrafast waveform synthesis.” Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on. 2009. 1-2. © Copyright 2010 IEEE
Authors: Fonstad, Clifton J., Jr., Braun, Eric K., Shenoy, Krishna V., Mikkelson, J. M., Aggarwal, Rajni J., Ahadian, Joseph F., Petrich, Gale S., Kolodziejski, Leslie A., Grot, A. C., Psaltis, Demetri, Royter, Yakov, Wang, Hao, Martin, Paul S., Haus, Hermann A., Chen, Jerry C., Pan, Janet L., Peng, Lung-Han, Iisuka, Norio, Smet, Jurgen H., Hu, Qing, Prasad, Sheila, Hoshino, Isako
Subject Terms: Heterostructures for High-Performance Devices, High-Temperature Stability of GaAs Integrated Circuits, High Peak-to-Valley Current Ratio Resonant-Tunneling Diodes on GaAs Substrates, Monolithic Integration of Resonant-Tunneling Diodes on GaAs Integrated Circuits, Phosphide-Based Optical Emitters for Monolithic Integration with GaAs MESFETS, Monolithic Integration of LEDs and VLSI GaAs MESFET Circuits, Development of an Epi-on-Electronics OEIC Technology, Integrated Optics Circuits Based on Commercial GaAs Integrated Circuits, Growth of Distributed Bragg Reflector at Reduced Temperature, Growth of Multiple Quantum Well Heterostructures at Reduced Temperature, Reactive Ion Etching of InGaAIAs Heterostructures, Reactive Ion Etching of InGaAsP Heterostructures, Tunable Semiconductor Lasers, Application of the Spectral Index Method to Laser Diode Design, Normal Incidence Quantum Well Infrared Photodetector, Fourteen-Band k * p Analysis of Intersubband Transitions in Conduction Band Quantum Wells, Intersubband Transitions in Ultra-Narrow Quantum Wells, In-plane Field Magneto-Tunneling Spectroscopy in Double InGaAs/InAIAs Quantum Well Structures on [001] InP Substrates, Tilted Field Magneto-Tunneling Spectroscopy in Double InGaAs/InAIAs Quantum Well Structures on [001] InP Substrates, In-plane Field Magneto-Tunneling Spectroscopy in Double InGaAs/InAIAs Quantum Well Structures on [111]B InP Substrates, Tilted Field Magneto-Tunneling Spectroscopy in Double InGaAs/InAIAs Quantum Well Structures on [111]B InP Substrates, High-Frequency/High-Speed Characterization of Optoelectronic Devices, High-Frequency/High-Speed Characterization of Integrated Circuits, In-Situ Supersonic Beam Etching of III-V Heterostructures
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Relation: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1994; Solid State Physics, Electronics and Optics; Materials and Fabrication; Heterostructures for High-Performance Devices; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 137; RLE_PR_137_01_01s_01; http://hdl.handle.net/1721.1/57295
Availability: http://hdl.handle.net/1721.1/57295
Authors: Fonstad, Clifton J., Jr., Choi, Woo-Young, Wong, Vincent V., Smith, Henry I., Meehan, Kathy, Gavrilovic, Paul, Whitney, P., Chen, Jerry C., Haus, Hermann A., Peng, Lung-Han, Smet, Jurgen H., Ippen, Erich P., Lenz, Gadi, Martin, Paul S., Shenoy, Krishna V., Goodhue, William D., Braun, Eric K., Mikkelson, J., Hansell, G., Harton, A., Wyatt, C., Ahadian, Joseph F., Kolodziejski, Leslie A., Grot, A. C., Psaltis, D., Nuytkens, P. R., Royter, Yakov, Aggarwal, Rajni J., Hirayama, Yuzo, Jones, R. Victor, Ehrenrich, Victor, Hu, Qing, Prasad, Sheila, Hoshino, Isako
Subject Terms: Heterostructures for High Performance Devices, Growth Optimization of MBE-Grown InAIAs on InP, Fabrication of Ridge Waveguide Distributed Feedback Lasers by X-ray Lithography, Numerical Calculation of Coupling Coefficients in Ridge Waveguide Distributed Feedback Lasers, Measurement of Excited-state Lifetimes in Narrow Quantum Wells, Tunable Semiconductor Lasers, Integration of Vertically-emitting, In-plane Cavity Laser Diodes on GaAs VLSI Circuitry, Thermal Stability of GaAs MESFET VLSI Circuits, Gas Source MBE of InGaAsP Laser Diodes on GaAs Substrates, High-Density OEIC Neural Systems Produced by Monolithic Integration of GaAIAs Light Emitting Diodes on GaAs MESFET VLSI Circuits, Surface-Normal Optical Input Cells for High-Density, High-Speed GaAs MESFET-based OEICs, Surface-Normal Optical Output Cells for High-Density, Fiber-coupled GaAs MESFET-based OEICs, Low-temperature, Selective-area MBE Growth of GaAllInAs Laser Diodes on Semi-insulating GaAs Substrates, Selective-area MBE Growth of GaAllInAs Optical Waveguides on Semi-insulating GaAs Substrates, Applications of Resonant Tunneling Diodes in GaAs MESFET VLSI, Polarization-resolved Infrared Spectra of Very Narrow AIAs/InGaAs/InP Quantum Wells, Symmetry Properties of Quantum Well Subband Energy Levels for Intersubband Transitions, Symmetry Properties of Quantum Well Subband Selection Rules for Intersubband Transitions, Investigation of Infrared Intersubband Emission from InGaAs/AIAs/InP Quantum Well Heterostructures, High-Frequency/High-Speed Characterization of Heterojunction Bipolar Transistors, High-Frequency/High-Speed Analysis of Heterojunction Bipolar Transistors, High-Frequency/High-Speed Modeling of Heterojunction Bipolar Transistors, High-Frequency/High-Speed Characterization of Heterojunction Laser Diodes, High-Frequency/High-Speed Analysis of Heterojunction Laser Diodes, High-Frequency/High-Speed Modeling of Heterojunction Laser Diodes, High-Frequency/High-Speed Characterization of Heterojunction m-s-m Photodetectors
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Relation: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1993; Solid State Physics, Electronics and Optics; Materials and Fabrication; Heterostructures for High Performance Devices; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 136; RLE_PR_136_01_01s_01; http://hdl.handle.net/1721.1/57249
Availability: http://hdl.handle.net/1721.1/57249
Authors: Fonstad, Clifton J., Jr., Choi, Woo-Young, Smith, Henry I., Hirayama, Yuzo, Smet, Jurgen H., Ippen, Erich P., Hu, Qing, Martin, Paul S., Haus, Hermann A., Royter, Yakov, Hopps, J. H., Shenoy, Krishna V., Mikkelson, J., Elman, B., Nuytkens, P. R., Grot, A. C., Psaltis, D., Aggarwal, Rajni J., Peng, Lung-Han, Jones, R. Victor, Ehrenrich, Victor
Subject Terms: Heterostructures for High Performance Devices, MBE-Grown InGaAIAs Laser Diodes for Optical Fiber Communication Applications, Design of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy, Fabrication of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy, Feasibility Study of 1.55 μm Intersubband Transition in InGaAs/AIAs Quantum-Well Heterostructures, Growth of High Quality InGaAIAs Multiple Quantum Wells, Characterization of High Quality InGaAIAs Multiple Quantum Wells, New Three-Terminal Laser Diodes with Dynamic Control of Gain, New Three-Terminal Laser Diodes with Dynamic Control of Refractive Index, Laser Diode Modeling for Narrow Linewidth Operation, Laser Diode Design for Narrow Linewidth Operation, Evaluation of GaAs MESFET VLSI Circuits as Substrates for III-V Heterostructure Epitaxy, Low Temperature Growth of GaAIAs Laser Diodes, Optical Input Circuitry for High Density, High Speed GaAs MESFET-based OEICs, Optical Output Circuitry for High Density, High Density GaAs MESFET-based OEIC Neural Systems, Applications of Resonant Tunneling Diodes in GaAs MESFET VLSI, Investigation of Infrared Intersubband Emission from InGaAs/AIAs/InP Quantum-Well Heterostructures, Infrared Characterization of InGaAs/AIAs/InP Quantum-Well Heterostructures, Analysis of the Symmetry Properties of Quantum Well Subband Energy Levels, Microwave Characterization of Emitter-Down Heterojunction Bipolar Transistors, Microwave Analysis of Emitter-Down Heterojunction Bipolar Transistors, Microwave Modeling of Emitter-Down Heterojunction Bipolar Transistors, Damage-Free In-Situ UHV Etching of III-V Heterostructures Using Molecular Beams, Damage-Free In-Situ UHV Cleaning of III-V Heterostructures Using Molecular Beams
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Relation: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1992; Solid State Physics, Electronics and Optics; Materials and Fabrication; Heterostructures for High Performance Devices; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 135; RLE_PR_135_01_01s_01; http://hdl.handle.net/1721.1/57213
Availability: http://hdl.handle.net/1721.1/57213
Authors: Fonstad, Clifton J., Jr., Vlcek, James C., Singer, Richard A., Burns, Geoffrey F., Failla, Anton, Shenoy, Krishna V., Mikkelson, J., Elman, B., Choi, Woo-Young, Royter, Yakov, Martin, Paul S., Haus, Hermann A., Hopps, J. H., Lee, Jae-Jin, Prasad, Sheila, Meskoob, B., Kim, Michael, Broekaert, Thomas P. E., Aggarwal, Rajni J., Smet, Jurgen H., Hu, Qing, Peng, Lung-Han, Jones, R. Victor, Ehrenrich, Victor, Hoshino, Isako, Ceyer, Sylvia T., Sawin, Herbert H.
Subject Terms: Heterostructures for High Performance Devices, Computer Controlled Growth of Lattice-Matched InGaAIAs Heterostructures on InP, Molecular Beam Epitaxy of InGaAIAs Strained-Layer Heterostructures on 111 GaAs, Molecular Beam Epitaxy of InGaAIAs Strained-Layer Heterostructures on InP, Monolithic Fabrication of Strain-free GaAIAs Laser Diodes on Silicon Substrates, Integration of Vertical Cavity Surface Emitting Lasers on GaAs Integrated Circuits, Low Temperature Growth of GaAIAs Laser Diodes, MBE-Grown InGaAIAs/InP Long-Wavelength Laser Diodes for Narrow Linewidth Applications, New Three-Terminal Independently Addressable Asymmetric Laser Diodes (IAADQW-LD) with Dynamic Control of Gain and Refractive Index, Design of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy, Fabrication of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy, Laser Diode Modeling for Narrow Linewidth Operation, Laser Diode Design for Narrow Linewidth Operation, Growth of Improved InGaAIAs/InP Heterojunction Bipolar Transistors, Processing of Improved InGaAIAs/InP Heterojunction Bipolar Transistors, Microwave Characterization of Emitter-Down Heterojunction Bipolar Transistors, Microwave Analysis of Emitter-Down Heterojunction Bipolar Transistors, Microwave Modeling of Emitter-Down Heterojunction Bipolar Transistors, Analysis of Three-Terminal n-n-n Quantum Well Base, Tunnel-Barrier Transistors, Applications of AlAs Etch-Stop Layers in InGaAIAs/InP Heterostructure Electronics, Applications of AlAs Etch-Stop Layers in InGaAIAs/InP Heterostructure Optoelectronics, Electrical Transport Studies in Directly Contacted InGaAs Quantum Wells, Investigation of Infrared Intersubband Emission from InGaAs/AIAs/InP Quantum Well Heterostructures, Investigation of Intersubband Relaxation Times in InGaAIAs Quantum Well Heterostructures, Infrared Characterization of InGaAs/AIAs/InP Quantum Well Heterostructures, Damage-Free In-Situ UHV Etching of III-V Heterostructures Using Molecular Beams, Damage-Free In-Situ UHV Cleaning of III-V Heterostructures Using Molecular Beams
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Relation: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1991; Solid State Physics, Electronics and Optics; Materials and Fabrication; Heterostructures for High Performance Devices; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 134; RLE_PR_134_01_01s_01; http://hdl.handle.net/1721.1/57191
Availability: http://hdl.handle.net/1721.1/57191
Authors: Fonstad, Clifton J., Jr., Vlcek, James C., Singer, Richard A., Burns, Geoffrey F., Blanck, Herve, Shenoy, Krishna V., Mikkelson, James, Choi, Woo-Young, Royter, Yakov, Martin, Paul S., Haus, Hermann A., Kuo, Tanni Y., Cunningham, Jack, Prasad, Sheila, Meskoob, Bahman, Kim, Michael, Broekaert, Thomas P. E., Smet, Jurgen, Peng, Lung-Han, Jones, R. Victor, Ehrenrich, Victor, Hoshino, Isako, Ceyer, Sylvia T., Sawin, Herbert H.
Subject Terms: Heterostructures for High Performance Devices, Computer Controlled Growth of Lattice-Matched InGaAIAs Heterostructures on InP, InGaAIAs Strained-Layer Heterostructures on 111 GaAs for Optoelectronic Device Applications, InGaAIAs Strained-Layer Heterostructures on InP for Optoelectronic Device Applications, Molecular Beam Epitaxy of GaAIAs Laser Diode Heterostructures on Silicon Substrates, Integration of Vertical Cavity Surface Emitting Lasers on GaAs Integrated Circuits, MBE-Grown InGaAIAs/InP Long-Wavelength Laser Diodes for Narrow Linewidth Applications, Applications for New Three Terminal Laser Diodes with Dynamic Control of Gain Index, Applications for New Three Terminal Laser Diodes with Dynamic Control of Refractive Index, Use of Graded Profiles to Improve InGaAIAs/InP Heterojunction Bipolar Transistor Performance, Applications of Delta-Doping to Heterojunction Bipolar Transistors, Microwave Characterization of Emitter-Down Heterojunction Bipolar Transistors, Microwave Analysis of Emitter-Down Heterojunction Bipolar Transistors, Microwave Modeling of Emitter-Down Heterojunction Bipolar Transistors, AlAs Etch-Stop Layers for InGaAIAs/InP Heterostructure Devices, AlAs Etch-Stop Layers for InGaAIAs/InP Heterostructure Circuits, Three-Terminal n-n-n Quantum-Well-Base, Tunnel-Barrier Devices, Self-Consistent Modeling of Biased Quantum-Well-Base, Tunnel-Barrier Structures, Infrared Characterization of InGaAs/AIAs/InP Quantum Well Heterostructures, Damage-Free In-Situ UHV Etching of III-V Heterostructures Using Molecular Beams, Damage-Free In-Situ UHV Cleaning of III-V Heterostructures Using Molecular Beams, Publications
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Relation: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1990; Solid State Physics, Electronics and Optics; Materials and Fabrication; Heterostructures for High Performance Devices; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 133; RLE_PR_133_01_01s_09; http://hdl.handle.net/1721.1/57158
Availability: http://hdl.handle.net/1721.1/57158
Authors: Fonstad, Clifton G., Jr., Vlcek, James C., Phillips, Mary R., Haus, Hermann A., Choi, Woo-Young, Royter, Yakow, Hoshiro, Isako, Singer, Richard, Brorson, Stuart D., Smith, Daryl, Laurich, B., Mailhoit, Christian, McCombe, Bruce D., Weinstein, Bernie A., Towe, Elias D., Le, H. Q., Hryniewicz, J. V., Broekaert, Thomas P. E., Peng, Lung-Han, Burns, Geoffrey F., Blanck, Herve, Thompson, Carl V., Ceyer, Sylvia T., Sawin, Herbert H.
Subject Terms: Heterostructures for High Performance Devices, Computer Controlled Growth of Lattice-Matched InGaAIAs Heterostructures on InP, InGaAIAs Multiple Quantum Well Heterostructures for Guided Wave Optics, MBE-Grown InGaAIAs/InP Long-Wavelength Laser Diodes for Narrow Linewidth Applications, InGaAIAs Strained-Layer Heterostructures on 111 GaAs for Optical for Modulator Applications, InGaAIAs Strained-Layer Heterostructures on InP for Optical for Modulator Applications, Molecular Beam Epitaxial Growth on (h11) Vicinal Surfaces, Pseudomorphic AIAs/InAs/InGaAs Resonant Tunneling Structures, Three-Terminal Quantum Well Base/Tunnel Barrier Devices, Design of GaAIAs Heterostructure Laser Diodes for Monolithic Integration with Si Circuits, Fabrication of GaAIAs Heterostructure Laser Diodes for Monolithic Integration with Si Circuits, Microbridge Suspension of Monolithic GaAIAs Heterostructures Grown on Si by MBE, Damage-Free In-Situ UHV Etching of Ill-V Heterostructures Using Molecular Beams, Damage-Free In-Situ UHV Cleaning of Ill-V Heterostructures Using Molecular Beams
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Relation: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1989; Solid State Physics, Electronics and Optics; Materials and Fabrication; Heterostructures for High Performance Devices; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 132; RLE_PR_132_01_01s_09; http://hdl.handle.net/1721.1/57127
Availability: http://hdl.handle.net/1721.1/57127