Authors: Chen, Zhen, Chua, Soo-Jin, Chen, Peng, Zhang, Ji
Subject Terms: laser excitation, optoelectronic devices, quantum well lasers
File Description: 330414 bytes; application/pdf
Relation: Advanced Materials for Micro- and Nano-Systems (AMMNS); http://hdl.handle.net/1721.1/3837
Availability: http://hdl.handle.net/1721.1/3837
Authors: Barkley, Edward, Fonstad, Clifton G. Jr.
Subject Terms: optoelectronic integration, heterogeneous integration, hybrid assembly, in-plane laser diodes, rectangular dielectric waveguides
File Description: 354502 bytes; application/pdf
Relation: Advanced Materials for Micro- and Nano-Systems (AMMNS); http://hdl.handle.net/1721.1/3963
Availability: http://hdl.handle.net/1721.1/3963
Authors: Chua, Soo-Jin, Fitzgerald, Eugene A., Song, T.L.
Subject Terms: graded InGaN buffers, GaN/InGaN Epilayers, strain relaxation, optoelectronic devices, lattice mismatch, thermal mismatch
File Description: 341524 bytes; application/pdf
Relation: Advanced Materials for Micro- and Nano-Systems (AMMNS); http://hdl.handle.net/1721.1/3723
Availability: http://hdl.handle.net/1721.1/3723
Authors: Fonstad, Clifton G. Jr.
Subject Terms: optoelectronics, heterogeneous integration, self assembly, VCSELs, III-V heterostructures
File Description: 96834 bytes; application/pdf
Relation: Advanced Materials for Micro- and Nano-Systems (AMMNS); http://hdl.handle.net/1721.1/3978
Availability: http://hdl.handle.net/1721.1/3978
Authors: Fonstad, Clifton G., Jr., Ahadian, Joseph F., Royter, Yakov, Patterson, Steven G., Viadyananthan, Praveen T., Postigo, P. Aitor, Petrich, Gale S., Kolodziejski, Leslie A., Mikkelson, James M., Goodhue, William D., Braddock, David, Mull, Daniel E., Choy, Henry K., Ram, Rajeev J., Hoshino, Isako, Prasad, Sheila, Wang, Haifeng, Hemenway, Roe B., Jr., Deming, Robert, Knoedl, Thomas, London, Joanna, Crankshaw, Donald S., Pan, Janet L.
Subject Terms: Compound Semiconductor Materials, Compound Semiconductor Devices, Epitaxy-on-Electronics Integration Technology, InGaAsP/GaAs Light Emitting Diodes Monolithically Integrated on GaAs VLSI Electronics, The OPTOCHIP Project, Low-Temperature Growth of Aluminum-Free InGaP/GaAs/InGaAs LED, Laser Diode Heterostructures by Solid Source MBE using a GaP Cell, Dry-Etch Technololgy for Aluminum-free InGaP/GaAs/InGaAs Laser Diode Facets, Dry-Etch Technololgy for Aluminum-free InGaP/GaAs/InGaAs Laser Diode Deflectors, Monolithic Integration of Vertical-Cavity Surface-Emitting Laser Diodes on GaAs VLSI Electronics, Hyperthermal Molecular Beam Dry Etching of III-V Compound Semiconductors, Microwave Characterization of Optoelectronic Devices, Monolithic Integration of 1550 nm Photodetectors on GaAs Transimpedance Amplifier Chips, Design of VCSEL-Based Resonant Cavity Enhanced Photodetectors, Analysis of VCSEL-Based Resonant Cavity Enhanced Photodetectors, Si-on-GaAs, Monolithic Heterogeneous Integration of Si CMOS with GaAs Optoelectronic Devices using EoE Techniques, Monolithic Heterogeneous Integration of Si CMOS with GaAs Optoelectronic Devices using SOI Techniques, Monolithic Heterogeneous Integration of Si CMOS with GaAs Optoelectronic Devices using MEMS Techniques, Aligned, Selective-Area Wafer-Scale Bonding of Optoelectronic Devices on GaAs Integrated Circuits, Normal-Incidence Quantum Well Intersubband Photodetectors (QWIPs) for Monolithic Integration
File Description: application/pdf
Relation: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1997; Solid State Physics, Electronics and Optics; Materials and Fabrication; Compound Semiconductor Materials and Devices; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 140; RLE_PR_140_01_01s_01; http://hdl.handle.net/1721.1/57412
Availability: http://hdl.handle.net/1721.1/57412
Authors: Kolodziejski, Leslie A., Petrich, Gale S., Ho, Easen, House, Jody L., Warlick, Emily L., Lopatnikova, Anna, Ippen, Erich P., Dougherty, David J., Fonstad, Clifton G., Jr., Ahadian, Joseph F., Patterson, Steven G., Shenoy, Krishna V., Hall, Katherine L., Donnelly, Joseph P., Marley, Elisabeth A., Milikow, Jeremy M., Haus, Hermann A., Smith, Henry I., Damask, Jay N., Joannopoulos, John D., Reif, L. Rafael, Villeneuve, Pierre R., Lim, Kuo-Yi, Fan, Shanhui, Chen, Jerry C., Tang, Xiao-feng
Subject Terms: Gas Source Molecular Beam Epitaxy of Compound Semiconductors, Gas Source Molecular Beam Epitaxy of ZnSe, Gas Source Molecular Beam Epitaxy of ZnSe:CI, Gas Source Molecular Beam Epitaxy of ZnSe:N, Novel Epitaxial III-V Buffer Layers for Wide Bandgap II-VI Visible Sources, Growth of ZnSe/GaAs Heterostructures, Characterization of ZnSe/GaAs Heterostructures, Low Temperature Growth of (In,Ga)P/(In,Ga)As Lasers for Optoelectronic-VLSI, Low Temperature Growth of (In,Ga)P/(In,Ga)As LEDs for Optoelectronic-VLSI, InP-Based Devices for Optical Communication Networks, Integrated Optical Circuits in InP, Photonic Bandgap Structures
File Description: application/pdf
Relation: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1995; Solid State Physics, Electronics and Optics; Materials and Fabrication; Gas Source Molecular Beam Epitaxy of Compound Semiconductors; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 138; RLE_PR_138_01_01s_03; http://hdl.handle.net/1721.1/57322
Availability: http://hdl.handle.net/1721.1/57322
Authors: Fonstad, Clifton J., Jr., Vlcek, James C., Singer, Richard A., Burns, Geoffrey F., Blanck, Herve, Shenoy, Krishna V., Mikkelson, James, Choi, Woo-Young, Royter, Yakov, Martin, Paul S., Haus, Hermann A., Kuo, Tanni Y., Cunningham, Jack, Prasad, Sheila, Meskoob, Bahman, Kim, Michael, Broekaert, Thomas P. E., Smet, Jurgen, Peng, Lung-Han, Jones, R. Victor, Ehrenrich, Victor, Hoshino, Isako, Ceyer, Sylvia T., Sawin, Herbert H.
Subject Terms: Heterostructures for High Performance Devices, Computer Controlled Growth of Lattice-Matched InGaAIAs Heterostructures on InP, InGaAIAs Strained-Layer Heterostructures on 111 GaAs for Optoelectronic Device Applications, InGaAIAs Strained-Layer Heterostructures on InP for Optoelectronic Device Applications, Molecular Beam Epitaxy of GaAIAs Laser Diode Heterostructures on Silicon Substrates, Integration of Vertical Cavity Surface Emitting Lasers on GaAs Integrated Circuits, MBE-Grown InGaAIAs/InP Long-Wavelength Laser Diodes for Narrow Linewidth Applications, Applications for New Three Terminal Laser Diodes with Dynamic Control of Gain Index, Applications for New Three Terminal Laser Diodes with Dynamic Control of Refractive Index, Use of Graded Profiles to Improve InGaAIAs/InP Heterojunction Bipolar Transistor Performance, Applications of Delta-Doping to Heterojunction Bipolar Transistors, Microwave Characterization of Emitter-Down Heterojunction Bipolar Transistors, Microwave Analysis of Emitter-Down Heterojunction Bipolar Transistors, Microwave Modeling of Emitter-Down Heterojunction Bipolar Transistors, AlAs Etch-Stop Layers for InGaAIAs/InP Heterostructure Devices, AlAs Etch-Stop Layers for InGaAIAs/InP Heterostructure Circuits, Three-Terminal n-n-n Quantum-Well-Base, Tunnel-Barrier Devices, Self-Consistent Modeling of Biased Quantum-Well-Base, Tunnel-Barrier Structures, Infrared Characterization of InGaAs/AIAs/InP Quantum Well Heterostructures, Damage-Free In-Situ UHV Etching of III-V Heterostructures Using Molecular Beams, Damage-Free In-Situ UHV Cleaning of III-V Heterostructures Using Molecular Beams, Publications
File Description: application/pdf
Relation: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1990; Solid State Physics, Electronics and Optics; Materials and Fabrication; Heterostructures for High Performance Devices; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 133; RLE_PR_133_01_01s_09; http://hdl.handle.net/1721.1/57158
Availability: http://hdl.handle.net/1721.1/57158
Authors: Fonstad, Clifton J., Jr., Ahadian, Joseph F., Royter, Yakov, Patterson, Steven G., Wang, Hao, Viadyananthan, Praveen T., Martin, Paul S., Aggarwal, Rajni J., Petrich, Gale S., Kolodziejski, Leslie A., Mikkelson, James M., Goodhue, William D., Fitzgerald, Eugene A., Bulsara, Mayank T., Hoshino, Isako, Tachikawa, Masami, Choy, Henry K., Ram, Rachna J., Livas, Jeffrey C., Hall, Katherine L., Prasad, Sheila, Shenoy, Krishna V., Warde, Cardinal, Luo, Jiafu, Psaltis, Demetri, Pan, Janet L., Crankshaw, Donald S., Kannam, P., Martin, R. J.
Subject Terms: Compound Semiconductor Materials, Compound Semiconductor Devices, Epitaxy-on-Electronics Integration Technology, Monolithic Enhancement of MESFET Electronics with Resonant Tunneling Diodes, Hyperthermal Molecular Beam Dry Etching of III-V Compound Semiconductors, InGaAsP/GaAs Light Emitting Diodes Monolithically Integrated on GaAs VLSI Electronics, The OPTOCHIP Project, Other Multi-group OEIC Chips, Monolithic Integration of Vertical-Cavity Surface-Emitting Laser Diodes on GaAs VLSI Electronics, Monolithic Integration of In-Plane, Surface-Emitting Laser Diodes on GaAs VLSI Electronics, Metal-Semiconductor-Metal Photodetectors from a GaAs VLSI Process, Monolithic Integration of 1550 nm Photodetectors on GaAs Transimpedance Amplifier Chips, Microwave Characterization of Optoelectronic Devices, Reduced-Temperature Growth of Distributed Bragg Relectors of Self-Electrooptic-Effect Devices on GaAs on GaAs VLSI Electronics, Reduced-Temperature Growth of Monolithic Integration of Self-Electrooptic-Effect Devices on GaAs on GaAs VLSI Electronics, Compact Integrated Optics Structures for Monolithic Integration, Integrated Normal Incidence Single-Band Quantum-Well Intersubband Photodetectors, Integrated Normal Incidence Dual-Band Quantum-Well Intersubband Photodetectors, Figures of Merit for Quantum-Well Intersubband Photodetector Focal-Plane Arrays in Different Operating Regimes
File Description: application/pdf
Relation: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1996; Solid State Physics, Electronics and Optics; Materials and Fabrication; Compound Semiconductor Materials and Devices; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 139; RLE_PR_139_01_01s_01; http://hdl.handle.net/1721.1/57392
Availability: http://hdl.handle.net/1721.1/57392
Authors: Fonstad, Clifton J., Jr., Ahadian, Joseph F., Royter, Yakov, Patterson, Steven G., Wang, Hao, Viadyananthan, Praveen T., Martin, Paul S., Aggarwal, Rajni J., Shenoy, Krishna V., Petrich, Gale S., Kolodziejski, Leslie A., Mikkelson, J. M., Fitzgerald, Eugene A., Bulsara, Mayank T., Tachikawa, Masami, Prasad, Sheila, Warde, Cardinal, Luo, Jiafu, Psaltis, Demetri, Goodhue, William D., Pan, Janet L., Kannam, P., Iisuka, Norio, Hoshino, Isako
Subject Terms: Compound Semiconductor Materials, Compound Semiconductor Devices, Epitaxy-on-Electronics Integration Technology, High Peak-to-Valley Ratio Resonant Tunneling Diodes on GaAs Substrates, Monolithic Enhancement of MESFET Electronics with Resonant Tunneling Diodes, Integrated InGaAsP/GaAs Light Emitting Diodes and Surface-Emitting Laser Diodes, Integrated Photodetector Standard Cells, Microwave Characterization of Optoelectronic Devices, Growth of Distributed Bragg Reflector at Reduced Temperature, Growth of Multiple Quantum Well Heterostructures at Reduced Temperature, Monolithic Integration of Self-Electrooptic-Effect Devices on Very Large Scale Integrated GaAs Electronics, Compact Integrated Optics Structures for Monolithic Integration, The OPTOCHIP Project, Other Multigroup OEIC Chips, Normal Incidence Single-Band Quantum-Well Intersubband Photodetectors, Normal Incidence Dual-Band Quantum-Well Intersubband Photodetectors, Integrated Quantum-Well Intersubband Photodetector Focal Plane Arrays, Intersubband Transitions in Narrow Quantum Wells, Kinetic Beam Etching of Semiconductor Nanostructures
File Description: application/pdf
Relation: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1995; Solid State Physics, Electronics and Optics; Materials and Fabrication; Compound Semiconductor Materials and Devices; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 138; RLE_PR_138_01_01s_01; http://hdl.handle.net/1721.1/57353
Availability: http://hdl.handle.net/1721.1/57353
Authors: Fonstad, Clifton J., Jr., Braun, Eric K., Shenoy, Krishna V., Mikkelson, J. M., Aggarwal, Rajni J., Ahadian, Joseph F., Petrich, Gale S., Kolodziejski, Leslie A., Grot, A. C., Psaltis, Demetri, Royter, Yakov, Wang, Hao, Martin, Paul S., Haus, Hermann A., Chen, Jerry C., Pan, Janet L., Peng, Lung-Han, Iisuka, Norio, Smet, Jurgen H., Hu, Qing, Prasad, Sheila, Hoshino, Isako
Subject Terms: Heterostructures for High-Performance Devices, High-Temperature Stability of GaAs Integrated Circuits, High Peak-to-Valley Current Ratio Resonant-Tunneling Diodes on GaAs Substrates, Monolithic Integration of Resonant-Tunneling Diodes on GaAs Integrated Circuits, Phosphide-Based Optical Emitters for Monolithic Integration with GaAs MESFETS, Monolithic Integration of LEDs and VLSI GaAs MESFET Circuits, Development of an Epi-on-Electronics OEIC Technology, Integrated Optics Circuits Based on Commercial GaAs Integrated Circuits, Growth of Distributed Bragg Reflector at Reduced Temperature, Growth of Multiple Quantum Well Heterostructures at Reduced Temperature, Reactive Ion Etching of InGaAIAs Heterostructures, Reactive Ion Etching of InGaAsP Heterostructures, Tunable Semiconductor Lasers, Application of the Spectral Index Method to Laser Diode Design, Normal Incidence Quantum Well Infrared Photodetector, Fourteen-Band k * p Analysis of Intersubband Transitions in Conduction Band Quantum Wells, Intersubband Transitions in Ultra-Narrow Quantum Wells, In-plane Field Magneto-Tunneling Spectroscopy in Double InGaAs/InAIAs Quantum Well Structures on [001] InP Substrates, Tilted Field Magneto-Tunneling Spectroscopy in Double InGaAs/InAIAs Quantum Well Structures on [001] InP Substrates, In-plane Field Magneto-Tunneling Spectroscopy in Double InGaAs/InAIAs Quantum Well Structures on [111]B InP Substrates, Tilted Field Magneto-Tunneling Spectroscopy in Double InGaAs/InAIAs Quantum Well Structures on [111]B InP Substrates, High-Frequency/High-Speed Characterization of Optoelectronic Devices, High-Frequency/High-Speed Characterization of Integrated Circuits, In-Situ Supersonic Beam Etching of III-V Heterostructures
File Description: application/pdf
Relation: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1994; Solid State Physics, Electronics and Optics; Materials and Fabrication; Heterostructures for High-Performance Devices; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 137; RLE_PR_137_01_01s_01; http://hdl.handle.net/1721.1/57295
Availability: http://hdl.handle.net/1721.1/57295
Authors: Haus, Hermann A., Ippen, Erich P., Fujimoto, James G., Hagelstein, Peter L., Acioli, Lucio H., Basu, Santanu, Gabetta, Guiseppe, Hirayama, Yuzo, Izatt, Joseph A., Kärtner, Franz X., Mecozzi, Antonio, Naganuma, Kazunori, Chen, Jerry C., Khatri, Farzana I., Moores, John D., Hon, Stephen Y., Huxley, Janice M., Nelson, Lynn E., Tamura, Kohichi R., Lai, Yinchieh, Bergman, Keren, Doerr, Christopher R., Shirasaki, Masataka, Damask, Jay N., Smith, Henry I., Wong, Vincent V., Fonstad, Clifton G., Martin, Paul S., Hall, Katherine L., Lenz, Gadi, Dougherty, David J., Hultgren, Charles T., Cheng, Tak K., Fleischer, Siegfried B., Jacobson, Joseph M., Huang, David, Ramaswamy, Malini, Ulman, Morrison, Chamon, Claudio D. C., Sun, Chi-Kuang, Lin, Charles P., Hee, Michael R., Muendel, Martin H., Bierbaum, Michele M., Goodberlet, James G., Braud, John Paul, Hung, Tsen-Yu, Morgenthaler, Ann W., Chuang, Isaac L., Kaushik, Sumanth, Chaudhary, Irfan U.
Subject Terms: Optics, Quantum Electronics, Additive Pulse Modelocking, Ultrashort Pulse Fiber Laser, Long Distance Fiber Communications, Squeezing, Integrated Optics Components, Tunable Lasers, Gain Dynamics in Semiconductor Amplifiers, Ultrafast Optical Kerr Effect in Active Waveguides, Coherent Phonons in Electronic Materials, Femtosecond Studies of Superconductivity, Femtosecond Pulse Generation in Solid State Lasers, Ultrafast Phenomena in Optoelectronic Materials, Time Domain Diagnostics of Waveguide Devices, Laser Medicine, Laser Surgery, Overview of the EUV Laser Effort, Nd:glass Amplifier Development, Spectral Measurements of a Ni-like Mo Plasma, Progress in EUV Laser Kinetics Modeling, Laser Cavities in the Soft X-Ray Region, Boltzmann Equation Studies, Coherent Fusion Studies
File Description: application/pdf
Relation: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1991; Solid State Physics, Electronics and Optics; Optics and Devices; Optics and Quantum Electronics; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 134; RLE_PR_134_01_03s_01; http://hdl.handle.net/1721.1/57189
Availability: http://hdl.handle.net/1721.1/57189
Authors: Fonstad, Clifton J., Jr., Vlcek, James C., Singer, Richard A., Burns, Geoffrey F., Failla, Anton, Shenoy, Krishna V., Mikkelson, J., Elman, B., Choi, Woo-Young, Royter, Yakov, Martin, Paul S., Haus, Hermann A., Hopps, J. H., Lee, Jae-Jin, Prasad, Sheila, Meskoob, B., Kim, Michael, Broekaert, Thomas P. E., Aggarwal, Rajni J., Smet, Jurgen H., Hu, Qing, Peng, Lung-Han, Jones, R. Victor, Ehrenrich, Victor, Hoshino, Isako, Ceyer, Sylvia T., Sawin, Herbert H.
Subject Terms: Heterostructures for High Performance Devices, Computer Controlled Growth of Lattice-Matched InGaAIAs Heterostructures on InP, Molecular Beam Epitaxy of InGaAIAs Strained-Layer Heterostructures on 111 GaAs, Molecular Beam Epitaxy of InGaAIAs Strained-Layer Heterostructures on InP, Monolithic Fabrication of Strain-free GaAIAs Laser Diodes on Silicon Substrates, Integration of Vertical Cavity Surface Emitting Lasers on GaAs Integrated Circuits, Low Temperature Growth of GaAIAs Laser Diodes, MBE-Grown InGaAIAs/InP Long-Wavelength Laser Diodes for Narrow Linewidth Applications, New Three-Terminal Independently Addressable Asymmetric Laser Diodes (IAADQW-LD) with Dynamic Control of Gain and Refractive Index, Design of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy, Fabrication of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy, Laser Diode Modeling for Narrow Linewidth Operation, Laser Diode Design for Narrow Linewidth Operation, Growth of Improved InGaAIAs/InP Heterojunction Bipolar Transistors, Processing of Improved InGaAIAs/InP Heterojunction Bipolar Transistors, Microwave Characterization of Emitter-Down Heterojunction Bipolar Transistors, Microwave Analysis of Emitter-Down Heterojunction Bipolar Transistors, Microwave Modeling of Emitter-Down Heterojunction Bipolar Transistors, Analysis of Three-Terminal n-n-n Quantum Well Base, Tunnel-Barrier Transistors, Applications of AlAs Etch-Stop Layers in InGaAIAs/InP Heterostructure Electronics, Applications of AlAs Etch-Stop Layers in InGaAIAs/InP Heterostructure Optoelectronics, Electrical Transport Studies in Directly Contacted InGaAs Quantum Wells, Investigation of Infrared Intersubband Emission from InGaAs/AIAs/InP Quantum Well Heterostructures, Investigation of Intersubband Relaxation Times in InGaAIAs Quantum Well Heterostructures, Infrared Characterization of InGaAs/AIAs/InP Quantum Well Heterostructures, Damage-Free In-Situ UHV Etching of III-V Heterostructures Using Molecular Beams, Damage-Free In-Situ UHV Cleaning of III-V Heterostructures Using Molecular Beams
File Description: application/pdf
Relation: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1991; Solid State Physics, Electronics and Optics; Materials and Fabrication; Heterostructures for High Performance Devices; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 134; RLE_PR_134_01_01s_01; http://hdl.handle.net/1721.1/57191
Availability: http://hdl.handle.net/1721.1/57191
Authors: Fisher, Arthur Douglas
Contributors: Cardinal Warde., Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Subject Terms: Electrical Engineering and Computer Science, Optical communications, Resolution (Optics), Optoelectronic devices
File Description: 570 p.; 30025702 bytes; 30025461 bytes; application/pdf
Relation: http://hdl.handle.net/1721.1/15897
Availability: http://hdl.handle.net/1721.1/15897
Authors: Antonsson, Erik Karl
Contributors: Robert W. Mann., Massachusetts Institute of Technology. Dept. of Mechanical Engineering.
Subject Terms: Mechanical Engineering, Human locomotion Data processing, Kinematics, Links and link-motion, Optoelectronic devices
File Description: 2 vol. (792 [i.e. 751] p.); 33823923 bytes; 33823681 bytes; application/pdf
Relation: http://hdl.handle.net/1721.1/15962
Availability: http://hdl.handle.net/1721.1/15962
Authors: Turkel, David Howard
Contributors: Walter H. Olson., Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Subject Terms: Electrical Engineering and Computer Science, Electrocardiography, Optoelectronic devices, Patient monitoring, Ambulatory medical care
File Description: [1], 40 leaves; 3259144 bytes; 3258906 bytes; application/pdf
Relation: http://hdl.handle.net/1721.1/15883
Availability: http://hdl.handle.net/1721.1/15883