Authors: Wang, Xiaoshan, Wang, Zhiwei, Zhang, Jindong, Wang, Xiang, Zhang, Zhipeng, Wang, Jialiang, Zhu, Zhaohua, Li, Zhuoyao, Liu, Yao, Hu, Xuefeng, Qiu, Junwen, Hu, Guohua, Chen, Bo, Wang, Ning, He, Qiyuan, Chen, Junze, Yan, Jiaxu, Zhang, Wei, Hasan, Tawfique, Li, Shaozhou, Li, Hai, Zhang, Hua, Wang, Qiang, Huang, Xiao, Huang, Wei
Contributors: School of Materials Science & Engineering, Centre for Programmable Materials
Subject Terms: DRNTU::Engineering::Materials, Metal Semiconductor Heterostructures, Solution Phase Epitaxy
File Description: 11 p.; application/pdf
Relation: Nature Communications; Wang, X., Wang, Z., Zhang, J., Wang, X., Zhang, Z., Wang, J., . . . Huang, W. (2018). Realization of vertical metal semiconductor heterostructures via solution phase epitaxy. Nature Communications, 9, 3611-. doi:10.1038/s41467-018-06053-z; https://hdl.handle.net/10356/81389; http://hdl.handle.net/10220/47481
Authors: Deki, M., Nitta, S., Honda, Y., Amano, H., Sandupatla, Abhinay, Arulkumaran, Subramanian, Ng, Geok Ing, Ranjan, Kumud
Contributors: School of Electrical and Electronic Engineering, Temasek Laboratories
Subject Terms: I-V characteristics, Epitaxy, Engineering::Electrical and electronic engineering
File Description: 5 p.; application/pdf
Relation: AIP Advances; Sandupatla, A., Arulkumaran, S., Ng, G. I., Ranjan, K., Deki, M., Nitta, S., . . . Amano, H. (2019). GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates. AIP Advances, 9(4), 045007-. doi:10.1063/1.5087491; https://hdl.handle.net/10356/90024; http://hdl.handle.net/10220/49368
Authors: Sandupatla, Abhinay, Arulkumaran, Subramanian, Ng, Geok Ing, Ranjan, Kumud, Deki, M., Nitta, S., Honda, Y., Amano, H.
Contributors: Temasek Laboratories, School of Electrical and Electronic Engineering
Subject Terms: Epitaxy, I-V characteristics, Engineering::Electrical and electronic engineering
File Description: 5 p.
Relation: AIP Advances; Sandupatla, A., Arulkumaran, S., Ng, G. I., Ranjan, K., Deki, M., Nitta, S., . . . Amano, H. (2019). GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates. AIP Advances, 9(4), 045007-. doi:10.1063/1.5087491; http://hdl.handle.net/10220/49368; http://dx.doi.org/10.1063/1.5087491
Authors: Wang, Xiaoshan, Wang, Zhiwei, Zhang, Jindong, Wang, Xiang, Zhang, Zhipeng, Wang, Jialiang, Zhu, Zhaohua, Li, Zhuoyao, Liu, Yao, Hu, Xuefeng, Qiu, Junwen, Hu, Guohua, Chen, Bo, Wang, Ning, He, Qiyuan, Chen, Junze, Yan, Jiaxu, Zhang, Wei, Hasan, Tawfique, Li, Shaozhou, Li, Hai, Zhang, Hua, Wang, Qiang, Huang, Xiao, Huang, Wei
Contributors: Centre for Programmable Materials, School of Materials Science and Engineering
Subject Terms: Metal Semiconductor Heterostructures, Solution Phase Epitaxy, DRNTU::Engineering::Materials
File Description: 11 p.
Relation: Nature Communications; Wang, X., Wang, Z., Zhang, J., Wang, X., Zhang, Z., Wang, J., . . . Huang, W. (2018). Realization of vertical metal semiconductor heterostructures via solution phase epitaxy. Nature Communications, 9, 3611-. doi:10.1038/s41467-018-06053-z; http://hdl.handle.net/10220/47481; http://dx.doi.org/10.1038/s41467-018-06053-z
Authors: Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Zheng, Y.
Contributors: School of Electrical and Electronic Engineering, Centre for OptoElectronics and Biophotonics (COEB), Temasek Laboratories @ NTU, NOVITAS-Nanoelectronics Centre of Excellence, CNRS International NTU THALES Research Alliances
Subject Terms: Engineering::Electrical and electronic engineering, Si Doping, Molecular Beam Epitaxy
File Description: application/pdf
Relation: NRF2017-NRF-ANR003 GaNGUN; Journal of Physics D: Applied Physics; Lingaparthi, R., Dharmarasu, N., Radhakrishnan, K. & Zheng, Y. (2022). Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy. Journal of Physics D: Applied Physics, 55(9), 095110-. https://dx.doi.org/10.1088/1361-6463/ac3457; https://hdl.handle.net/10356/154964; 2-s2.0-85120613591; 55; 095110
Contributors: School of Electrical and Electronic Engineering, Centre for Micro-/Nano-electronics (NOVITAS), Temasek Laboratories @ NTU
Relation: MOE 2017-T1-001-200; Thin Solid Films; Lingaparthi, R., Dharmarasu, N., Radhakrishnan, K. & Agrawal, M. (2020). In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications. Thin Solid Films, 708, 138128-. https://dx.doi.org/10.1016/j.tsf.2020.138128; https://hdl.handle.net/10356/154381; 2-s2.0-85085270121; 708; 138128
Contributors: School of Electrical and Electronic Engineering
Subject Terms: Molecular Beam Epitaxy, Compound Semiconductor, Engineering::Electrical and electronic engineering
File Description: 19 p.; application/pdf
Relation: Applied Surface Science; Jia, B. W., Tan, K. H., Loke, W. K., Wicaksono, S., & Yoon, S. F. (2018). Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit array. Applied Surface Science, 427 Part B, 876-883. doi:10.1016/j.apsusc.2017.09.081; https://hdl.handle.net/10356/80642; http://hdl.handle.net/10220/50069
Contributors: School of Electrical and Electronic Engineering
Subject Terms: Molecular beam epitaxy, Antimonides, DRNTU::Engineering::Electrical and electronic engineering
File Description: 18 p.; application/pdf
Relation: Journal of Crystal Growth; Jia, B. W., Tan, K. H., Loke, W. K., Wicaksono, S., & Yoon, S. F. (2018). Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer. Journal of Crystal Growth, 490, 97-103. doi:10.1016/j.jcrysgro.2018.03.026; https://hdl.handle.net/10356/104687; http://hdl.handle.net/10220/50025
Contributors: School of Electrical and Electronic Engineering
Subject Terms: Molecule Beam Epitaxy, Compound Semiconductor, Engineering::Electrical and electronic engineering::Semiconductors
File Description: 23 p.
Relation: Applied Surface Science; Jia, B. W., Tan, K. H., Loke, W. K., Wicaksono, S., & Yoon, S. F. (2018). Growth and characterization of InSb on (1 0 0) Si for mid-infrared application. Applied Surface Science, 440, 939-945. doi:10.1016/j.apsusc.2018.01.219; http://hdl.handle.net/10220/50338; http://dx.doi.org/10.1016/j.apsusc.2018.01.219
Contributors: School of Electrical and Electronic Engineering
Subject Terms: Molecular beam epitaxy, Antimonides, DRNTU::Engineering::Electrical and electronic engineering
File Description: 18 p.
Relation: Journal of Crystal Growth; Jia, B. W., Tan, K. H., Loke, W. K., Wicaksono, S., & Yoon, S. F. (2018). Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer. Journal of Crystal Growth, 490, 97-103. doi:10.1016/j.jcrysgro.2018.03.026; http://hdl.handle.net/10220/50025; http://dx.doi.org/10.1016/j.jcrysgro.2018.03.026
Authors: Lai, Donny, Tan, Yew Heng, Gunawan, Oki, He, Lining, Tan, Chuan Seng
Contributors: School of Electrical and Electronic Engineering, Nanyang Nanofabrication Centre
Subject Terms: Epitaxy, Solar cells
File Description: 3 p.; application/pdf
Relation: Applied Physics Letters; Lai, D., Tan, Y. H., Gunawan, O., He, L., & Tan, C. S. (2011). Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy. Applied Physics Letters, 99(1), 011102-.; https://hdl.handle.net/10356/86545; http://hdl.handle.net/10220/44101
Contributors: School of Electrical and Electronic Engineering
Subject Terms: Molecular Beam Epitaxy, Compound Semiconductor, Engineering::Electrical and electronic engineering
File Description: 19 p.
Relation: Applied Surface Science; Jia, B. W., Tan, K. H., Loke, W. K., Wicaksono, S., & Yoon, S. F. (2018). Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit array. Applied Surface Science, 427 Part B, 876-883. doi:10.1016/j.apsusc.2017.09.081; http://hdl.handle.net/10220/50069; http://dx.doi.org/10.1016/j.apsusc.2017.09.081
Contributors: School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences
Subject Terms: III-V semiconductors, Critical point phenomena, Dielectric thin films, Dielectric function, Epitaxy
File Description: application/pdf
Relation: Journal of Applied Physics; D'Costa, V. R., Tan, K. H., Jia, B. W., Yoon, S. F., & Yeo, Y.-C. (2015). Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy. Journal of Applied Physics, 117(22), 223106-.; https://hdl.handle.net/10356/104319; http://hdl.handle.net/10220/38809
Authors: Zhang, Zi-Hui, Liu, Wei, Ju, Zhengang, Tan, Swee Tiam, Ji, Yun, Zhang, Xueliang, Wang, Liancheng, Kyaw, Zabu, Sun, Xiao Wei, Demir, Hilmi Volkan
Contributors: School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences
Subject Terms: Light emitting diodes, Polarization, Conduction bands, Charge injection, Epitaxy
File Description: 5 p.; application/pdf
Relation: Applied Physics Letters; Zhang, Z.-H., Liu, W., Ju, Z., Tan, S. T., Ji, Y., Zhang, X., et al. (2014). Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency. Applied Physics Letters, 104(25), 251108-.; https://hdl.handle.net/10356/81214; http://hdl.handle.net/10220/39200
Contributors: School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences
Subject Terms: III-V semiconductors, Critical point phenomena, Dielectric function, Epitaxy, Dielectric thin films
Relation: Journal of Applied Physics; D'Costa, V. R., Tan, K. H., Jia, B. W., Yoon, S. F., & Yeo, Y.-C. (2015). Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy. Journal of Applied Physics, 117(22), 223106-.; http://hdl.handle.net/10220/38809; http://dx.doi.org/10.1063/1.4922586
Authors: Zhang, Zi-Hui, Liu, Wei, Ju, Zhengang, Tan, Swee Tiam, Ji, Yun, Zhang, Xueliang, Wang, Liancheng, Kyaw, Zabu, Sun, Xiao Wei, Demir, Hilmi Volkan
Contributors: School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences
Subject Terms: Light emitting diodes, Polarization, Conduction bands, Charge injection, Epitaxy
File Description: 5 p.
Relation: Applied Physics Letters; Zhang, Z.-H., Liu, W., Ju, Z., Tan, S. T., Ji, Y., Zhang, X., et al. (2014). Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency. Applied Physics Letters, 104(25), 251108-.; http://hdl.handle.net/10220/39200; http://dx.doi.org/10.1063/1.4885421
Authors: Lai, Donny, Tan, Yew Heng, Gunawan, Oki, He, Lining, Tan, Chuan Seng
Contributors: Nanyang Nanofabrication Centre, School of Electrical and Electronic Engineering
Subject Terms: Epitaxy, Solar cells
File Description: 3 p.
Relation: Applied Physics Letters; Lai, D., Tan, Y. H., Gunawan, O., He, L., & Tan, C. S. (2011). Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy. Applied Physics Letters, 99(1), 011102-.; http://hdl.handle.net/10220/44101; http://dx.doi.org/10.1063/1.3607303